Oral presentation

[14p-2U-12~16] 17.2 Structure control and process

Mon. Sep 14, 2015 4:45 PM - 6:00 PM 2U (233)

座長:田中丈士(産総研)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:45 PM - 5:00 PM

[14p-2U-12] Formation of nano-carbon structures on single-walled carbon nanotubes by X-ray irradiation and subsequent thermal annealing

〇Toshiya Murakami¹, Satoshi Isozaki¹, Shouhei Hashimoto¹, Kenji Kisoda², Chihiro Itoh¹ (1.Dept. of Materials Science and Chemistry, Wakayama Univ., 2.Dept. of Phys., Wakayama Univ.)

5:00 PM - 5:15 PM

▼ [14p-2U-13] Sorting of Semiconducting, Large Diameter Single-Wall Carbon Nanotubes:
Towards High Mobility Electronic Devices Application

〇(D)Boanerges Thendie¹, Haruka Omachi¹, Ryo Kitaura¹, Yasumitsu Miyata², Hisanori Shinohara¹ (1.Nagoya Univ., 2.Tokyo Metro. Univ.)

5:15 PM - 5:30 PM

△ [14p-2U-14] Synthesis of Mesoporous Carbon by Solution Plasma

〇(M2)AKIHITO YOSHIDA¹, UENO TOMONAGA^1,2, SAITO NAGAHIRO^1,2,3,4 (1.Nagoya Univ., 2.Green Mobility Collaborative Research Center, Nagoya Univ., 3.Institute of Innovation for Future Society, Nagoya Univ., 4.JST - CREST)

5:30 PM - 5:45 PM

[14p-2U-15] Control of Carbon Conductivity with Induction of Naphthalene and Anthracene
by Using Solution Plasma Process

〇(PC)Hoonseung Lee¹, Tomonaga Ueno², Nagahiro Saito^3,4 (1.Nagoya Univ., 2.Green Mob. Cent., 3.Inst. Inov. Fut.Soc., 4.JST-CREST)

5:45 PM - 6:00 PM

[14p-2U-16] Evaluation of Crystalline and Mechanical Properties of Joule-heated Carbon Nanotube Yarn

〇Tadashi Sato¹, Kazuki Nakagome¹, Toru Iijima², Yudai Inagaki², Yasuhiko Hayashi², Toru Kuzumaki¹ (1.Graduate school of Tokai Univ, 2.Graduate school of Okayama Univ)

Oral presentation

[14p-2T-15~20] 17.2 Structure control and process

Mon. Sep 14, 2015 5:30 PM - 7:00 PM 2T (232)

座長:前橋兼三(農工大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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5:30 PM - 5:45 PM

[14p-2T-15] Fabrication of graphene nanoribbons by Unzip of Chirality-Separated SWNT

〇Minoru Fukumori¹, Hirofumi Tanaka², Takuji Ogawa¹ (1.Osaka Univ., 2.Kyushu Inst. Tech.)

5:45 PM - 6:00 PM

[14p-2T-16] Investigation on process condition of graphene selective growth on Ni interconnect

〇Tatsuro Saito¹, Daisuke Nishide², Atsunobu Isobayashi¹, Ban Ito³, Taishi Ishikura¹, Naoshi Sakuma¹, Tadashi Sakai¹, Akihiro Kajita¹ (1.Toshiba Corp., 2.Tokyo Electron, 3.Ebara Corp.)

6:00 PM - 6:15 PM

[14p-2T-17] Analysis of Moiré patterns originating from graphenes grown on the front and back sides of a copper substrate used in CVD

〇Kenji Yamazaki¹, Yosuke Maehara¹, Kazutoshi Gohara¹ (1.Hokkaido Univ.)

6:15 PM - 6:30 PM

[14p-2T-18] Fabrication and characterization of graphene lateral superlattices on SiC facets (1)

〇Satoru Tanaka¹, Kohei Fukuma¹, Shingo Hayashi¹, Takashi Kajiwara¹, Anton Visikovskiy¹, Takushi Iimori², Koichiro Ienaga², Koichiro Yaji², Kan Nakatsuji², Fumio Komori², Hirokazu Tanaka³, Akinobu Kanda³, Nguyen Thanh Cuong⁴, Susumu Okada³ (1.Kyushu Univ., 2.Univ. Tokyo, 3.Univ. Tsukuba, 4.NIMS)

6:30 PM - 6:45 PM

[14p-2T-19] Fabrication and characterization of graphene lateral superlattices on SiC facets (2)

〇(M2)Kouhei Fukuma¹, Shingo Hayashi¹, Takashi Kajiwara¹, Anton Visikovskiy¹, Satoru Tanaka¹, Takushi Iimori², Kouichirou Ienaga², Kouichirou Yaji², Hiroshi Nakatsuji², Fumio Komori², hirokazu Tanaka³, masanobu Kanda³, Nguyen Thanh Cuong⁴, Susumu Okada³ (1.Kyushu univ., 2.Univ. Tokyo, 3.Univ. Tsukuba, 4.NIMS)

6:45 PM - 7:00 PM

[14p-2T-20] Formation of Hydrogenated Graphene using H₂ Neutral Beam

〇Takeru Okada¹, Seiji Samukawa^1,2 (1.IFS, Tohoku Univ., 2.WPI-AIMR, Tohoku Univ.)

Oral presentation

[16p-2T-1~7] 17.2 Structure control and process

Wed. Sep 16, 2015 1:00 PM - 2:45 PM 2T (232)

座長:日比野浩樹(関西学院大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:00 PM - 1:15 PM

△ [16p-2T-1] Creation of Boron-Doped Graphene by Thermal Decomposition of B₄C Thin Film on SiC(000-1)

〇(M2)atsushi masumori¹, Wataru Norimatsu¹, Michiko Kusunoki^1,2 (1.Nagoya Univ., 2.Nagoya Univ. EcoTopia)

1:15 PM - 1:30 PM

[16p-2T-2] Mechanism for ultraviolet laser process of graphene on SiO₂/Si

〇(M2)Nariaki Yurugi¹, Fjio Wakaya¹, Satoshi Abo¹, Hayato Yamashita¹, Masayuki Abe¹, Mikio Takai¹ (1.Osaka Univ)

1:30 PM - 1:45 PM

[16p-2T-3] Influence of Graphene Crystals Structures on Hydrogen Induced Anisotropic Etching Process

〇KALITA GOLAP¹, REMI PAPON¹, AMUTHA THANGARAJA¹, MASAKI TANEMURA¹ (1.Nagoya Inst Technol.)

1:45 PM - 2:00 PM

[16p-2T-4] Reduction of Graphene Oxide by Thermal-assisted VUV Photochemical Reaction

〇(D)Yudi Tu¹, Toru Utsunomiya¹, Takashi Ichii¹, Hiroyuki Sugimura¹ (1.Kyoto Univ.)

2:00 PM - 2:15 PM

[16p-2T-5] Increasing Homogeneity of Reduced Graphene Oxide and Ag Nanowire Films

〇Katsuyuki Naito¹, Norihiro Yoshinaga¹, Yoshihiro Akasaka¹ (1.Toshiba R&D Center)

2:15 PM - 2:30 PM

△ [16p-2T-6] Polymer-free transfer of CVD graphene to boron nitride substrates

〇(DC)Miho Fujihara¹, Shun Ogawa², Ryosuke Inoue², Kenji Watanabe³, Takashi Taniguchi³, Hisanori Shinohara¹, Yasumitsu Miyata^2,4 (1.Nagoya Univ., 2.Tokyo Metro. Univ., 3.NIMS, 4.JST-PRESTO)

2:30 PM - 2:45 PM

[16p-2T-7] Preparation of CVD graphene/boron nitride heterostructures by metal-melting transfer

〇Ryosuke Inoue¹, Yutaka Maniwa¹, Yasumitsu Miyata^1,2 (1.Tokyo Metro. Univ., 2.JST-PRESTO)

Sessions

17 Nanocarbon Technology » 17.2 Structure control and process

[14p-2U-12~16] 17.2 Structure control and process

[14p-2U-12] Formation of nano-carbon structures on single-walled carbon nanotubes by X-ray irradiation and subsequent thermal annealing

▼ [14p-2U-13] Sorting of Semiconducting, Large Diameter Single-Wall Carbon Nanotubes:
Towards High Mobility Electronic Devices Application

△ [14p-2U-14] Synthesis of Mesoporous Carbon by Solution Plasma

[14p-2U-15] Control of Carbon Conductivity with Induction of Naphthalene and Anthracene
by Using Solution Plasma Process

[14p-2U-16] Evaluation of Crystalline and Mechanical Properties of Joule-heated Carbon Nanotube Yarn

[14p-2T-15~20] 17.2 Structure control and process

[14p-2T-15] Fabrication of graphene nanoribbons by Unzip of Chirality-Separated SWNT

[14p-2T-16] Investigation on process condition of graphene selective growth on Ni interconnect

[14p-2T-17] Analysis of Moiré patterns originating from graphenes grown on the front and back sides of a copper substrate used in CVD

[14p-2T-18] Fabrication and characterization of graphene lateral superlattices on SiC facets (1)

[14p-2T-19] Fabrication and characterization of graphene lateral superlattices on SiC facets (2)

[14p-2T-20] Formation of Hydrogenated Graphene using H₂ Neutral Beam

[16p-2T-1~7] 17.2 Structure control and process

△ [16p-2T-1] Creation of Boron-Doped Graphene by Thermal Decomposition of B₄C Thin Film on SiC(000-1)

[16p-2T-2] Mechanism for ultraviolet laser process of graphene on SiO₂/Si

[16p-2T-3] Influence of Graphene Crystals Structures on Hydrogen Induced Anisotropic Etching Process

[16p-2T-4] Reduction of Graphene Oxide by Thermal-assisted VUV Photochemical Reaction

[16p-2T-5] Increasing Homogeneity of Reduced Graphene Oxide and Ag Nanowire Films

△ [16p-2T-6] Polymer-free transfer of CVD graphene to boron nitride substrates

[16p-2T-7] Preparation of CVD graphene/boron nitride heterostructures by metal-melting transfer

Authentication

Sessions

17 Nanocarbon Technology » 17.2 Structure control and process

[14p-2U-12~16] 17.2 Structure control and process

▼ [14p-2U-13] Sorting of Semiconducting, Large Diameter Single-Wall Carbon Nanotubes:Towards High Mobility Electronic Devices Application

△ [14p-2U-14] Synthesis of Mesoporous Carbon by Solution Plasma

[14p-2T-15~20] 17.2 Structure control and process

[16p-2T-1~7] 17.2 Structure control and process

△ [16p-2T-1] Creation of Boron-Doped Graphene by Thermal Decomposition of B4C Thin Film on SiC(000-1)

△ [16p-2T-6] Polymer-free transfer of CVD graphene to boron nitride substrates

Authentication

▼ [14p-2U-13] Sorting of Semiconducting, Large Diameter Single-Wall Carbon Nanotubes:
Towards High Mobility Electronic Devices Application

△ [16p-2T-1] Creation of Boron-Doped Graphene by Thermal Decomposition of B₄C Thin Film on SiC(000-1)