Oral presentation

[14p-2J-5~18] 10.2 Spin torque, spin current, circuits, and measurement technologies

Mon. Sep 14, 2015 3:00 PM - 6:45 PM 2J (223)

座長:森山貴広(京大)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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3:00 PM - 3:15 PM

△ [14p-2J-5] Fast spin-transfer-torque switching in a spin-valve nanopillar having a conically magnetized free layer

〇Rie Matsumoto¹, Hiroko Arai^2,1, Shinji Yuasa¹, Hiroshi Imamura¹ (1.AIST, 2.PRESTO, JST)

3:15 PM - 3:30 PM

▲ [14p-2J-6] Fabrication of p-SAF Structure with Strong Interlayer Exchange Coupling

〇Kay Yakushiji¹, Hitoshi Kubota¹, Akio Fukushima¹, Shinji Yuasa¹ (1.AIST)

3:30 PM - 3:45 PM

▼ [14p-2J-7] Wire width dependence of current-induced domain wall motion properties

〇(M1)Toru Iwabuchi¹, Shunsuke Fukami^2,3, Hideo Ohno^1,2,3,4 (1.RIEC, Tohoku Univ., 2.CSIS, Tohoku Univ., 3.CIES, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ.)

3:45 PM - 4:00 PM

▼ [14p-2J-8] Switching characteristics of CoFeB-MgO magnetic tunnel junctions in the ns regime

〇Naoki Ohshima¹, Shuji Kubota¹, Hideo Sato^2,3, Shunsuke Fukami^2,3, Fumihiro Matsukura^1,2,4, Hideo Ohno^1,2,3,4 (1.Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku Univ., 2.CSIS, Tohoku Univ., 3.CIES, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ.)

4:00 PM - 4:15 PM

▲ [14p-2J-9] Anti-damping spin transfer torque through epitaxial Nickel oxide

〇Takahiro Moriyama¹, So Takei², Masaki Nagata¹, Yoko Yoshimura¹, Noriko Matsuzaki¹, Takahito Terashima¹, Yaroslav Tserkovnyak², Teruo Ono¹ (1.Kyoto Univ., 2.UCLA)

4:15 PM - 4:30 PM

▲ [14p-2J-10] Formation and Dynamics of Magnetic Vortex in Co-Based Heusler Alloys

〇Takeshi Seki^1,2, Tatsuya Yamamoto¹, Koki Takanashi¹ (1.IMR, Tohoku Univ., 2.JST-PRESTO)

4:30 PM - 4:45 PM

▼ [14p-2J-11] Spin Torque-Induced Vortex Oscillation in Co₂(Fe, Mn)Si Heusler Alloy

〇(D)Tatsuya Yamamoto¹, Takashi Seki^1,2, Koki Takanashi¹ (1.IMR, Tohoku Univ., 2.JST-PRESTO)

Break （4:45 PM - 5:00 PM）

5:00 PM - 5:15 PM

▼ [14p-2J-12] Microstructure design of Spin-Torque-Oscillator for microwave assisted magnetic recording applications using micromagnetic simulation

〇Hossein SepehriAmin¹, S. Bosue¹, Y. Sakuraba¹, T. Schrefl², C. Abert³, D. Suess³ (1.NIMS, 2.Danube University Krems, Austria, 3.Technical University of Vienna, Austria)

5:15 PM - 5:30 PM

▲ [14p-2J-13] Reduction of bias current density using Heusler alloy spin injection layer in mag-flip spin-torque oscillator devices for microwave-assisted magnetic recording

〇(P)Subrojati Bosu¹, Hossein Sepehri-Amin¹, Yuya Sakuraba¹, Masamitsu Hayashi¹, Kazuhiro Hono¹ (1.National Institute for Materials Science)

5:30 PM - 5:45 PM

▼ [14p-2J-14] Experimental determination of the spin relaxation mechanism in highly-doped n-type germanium epilayers

〇(D)Sergey Dushenko^1,2, Mariko Koike¹, Yuichiro Ando^1,2, Teruya Shinjo², Maksym Myronov³, Masashi Shiraishi^1,2 (1.Osaka Univ., 2.Kyoto Univ., 3.Univ. of Warwick)

5:45 PM - 6:00 PM

▲ [14p-2J-15] Spin-charge conversion modulation via ionic liquid gate in a single-layer graphene.

〇(D)Sergey Dushenko^1,2, Hiroki Ago³, Kenji Kawahara³, Tetsuya Tsuda¹, Susumu Kuwabata¹, Taishi Takenobu⁴, Teruya Shinjo², Yuichiro Ando², Masashi Shiraishi² (1.Osaka Univ., 2.Kyoto Univ., 3.Kyushu Univ., 4.Waseda Univ.)

6:00 PM - 6:15 PM

▼ [14p-2J-16] Suppression of spin pumping efficiency at low temperature in Pt/YIG thin films

〇EI SHIGEMATSU¹, Yuichiro Ando¹, Ryo Ohshima^1,2, Sergey Dushenko^1,2, Yukio Higuchi³, Hans Jurgen von Bardeleben⁴, Masashi Shiraishi¹ (1.Kyoto Univ., 2.Osaka Univ., 3.Murata Co., Ltd., 4.Paris 6)

6:15 PM - 6:30 PM

▲ [14p-2J-17] Investigation of gate-voltage dependence of spin accumulation signal in nondegenerate Si

〇Takayuki Tahara¹, Hayato Koike², Yuichiro Ando¹, Makoto Kameno³, Tomoyuki Sasaki², Yoshishige Suzuki³, Masashi Shiraishi^1,3 (1.Kyoto Univ., 2.TDK Corp., 3.Osaka Univ.)

6:30 PM - 6:45 PM

▼ [14p-2J-18] Spin injection into the topological crystalline insulator SnTe using spin pumping

〇Akiyori Yamamoto¹, Tomonari Yamaguchi², Ryo Ishikawa², Ryota Akiyama², Yuki K. Wakabayashi¹, Shinji Kuroda², Shinobu Ohya¹, Masaaki Tanaka¹ (1.The Univ. of Tokyo, 2.Univ. of Tsukuba)

Oral presentation

[15a-3A-1~11] 10.2 Spin torque, spin current, circuits, and measurement technologies

Tue. Sep 15, 2015 9:00 AM - 11:45 AM 3A (International Conference Room)

座長:林将光(物材機構)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

▼ [15a-3A-1] Pulse width dependence of a spin-orbit torque induced magnetization switching

〇Tetsuro Anekawa¹, Chaoliang Zhang¹, Shunsuke Fukami^2,3, Hideo Ohno^1,2,3,4 (1.RIEC Tohoku univ., 2.CSIS, Tohoku Univ., 3.CIES, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ.)

9:15 AM - 9:30 AM

▲ [15a-3A-2] Spin-orbit torque induced switching in an antiferromagnet/ferromagnet heterostructure

〇Shunsuke Fukami^1,2, Chaoliang Zhang³, Samik DuttaGupta³, Hideo Ohno^1,2,3,4 (1.CSIS, Tohoku Univ., 2.CIES, Tohoku Univ., 3.RIEC, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ.)

9:30 AM - 9:45 AM

▼ [15a-3A-3] Magnetization reversal induced by spin-orbit torque in a nanoscle Ta/CoFeB/MgO dot

〇(D)Chaoliang Zhang¹, Shunsuke Fukami^2,3, Hideo Sato^2,3, Fumihiro Matsukura^1,2,4, Hideo Ohno^1,2,3,4 (1.RIEC, Tohoku Univ., 2.CSIS, Tohoku Univ., 3.CIES, Tohoku Univ., 4.WPI-AIMR, Tohoku Univ.)

9:45 AM - 10:00 AM

▲ [15a-3A-4] Spin-orbit torques in ferromagnetic bilayer

〇Tomohiro Taniguchi¹, Julie Grollier², Mark Stiles³ (1.SRC, AIST, 2.CNRS/Thales, 3.NIST)

10:00 AM - 10:15 AM

▼ [15a-3A-5] Inverse-magnetostriction-induced switching current reduction for spin-transfer torque MTJs

〇Yota Takamura¹, Shigeki Nakagawa¹, Satoshi Sugahara² (1.Dept. of Physical Electron., Tokyo Tech, 2.ISEL, Tokyo Tech)

10:15 AM - 10:30 AM

▼ [15a-3A-6] Observation of Spin Transport through Oxide Interfaces

〇(M2)Ryo Ohshima¹, Yuichiro Ando², Teruya Shinjo², Kosuke Matsuzaki³, Tomofumi Susaki³, Masashi Shiraishi² (1.Osaka Univ., 2.Kyoto Univ., 3.MSL, Tokyo Tech.)

10:30 AM - 10:45 AM

▼ [15a-3A-7] Gate control of magneto-transport properties in Ta thin film

〇Hiromu Gamou¹, Jeongchun Ryu¹, Shoichi Takasuna¹, Kohei Yoshizumi¹, Makoto Kohda¹, Junsaku Nitta¹ (1.Tohoku Univ.)

10:45 AM - 11:00 AM

[15a-3A-8] Interfacial magneto anisotropy in CoFeB/MgO investigated by ferromagnetic resonance

〇(M2)Ryo ANAMI¹, Bivas Rana², Kouta Kondou², Masaki Yamada³, Katsuya Miura³, Susumu Ogawa³, YoshiChika Otani^2,4, Yasuhiro Fukuma^1,2 (1.Kyutech, 2.CEMS RIKEN, 3.CRL Hitachi, 4.ISSP Univ. of Tokyo)

11:00 AM - 11:15 AM

[15a-3A-9] Fabrication of spin injection devices using Ni₇₈Fe₂₂ thin-film edge between low-melting-point glasses

〇TAKAHIRO MISAWA¹, Sumito Mori¹, Haruya Kasa¹, Kousuke Nakamura², Hideo Kaiju¹, Junji Nishii¹ (1.RIES Hokkaido Univ., 2.Sci. Hokkaido Univ.)

11:15 AM - 11:30 AM

▲ [15a-3A-10] All-oxide spin Seebeck devices using RuO₂ films depending on annealing temperature

〇Akihiro Kirihara^1,2, Masahiko Ishida^1,2, Kazuki Ihara^1,2, Yuma Iwasaki¹, Hiroko Someya^1,2, Ryota Yuge¹, Ken-ichi Uchida^3,4, Eiji Saitoh^2,3,5,6, Shinichi Yorozu^1,2 (1.NEC, 2.JST-ERATO, 3.IMR, Tohoku Univ., 4.JST-PRESTO, 5.AIMR, Tohoku Univ., 6.JAEA)

11:30 AM - 11:45 AM

▲ [15a-3A-11] Observation of an unexpected enhancement of the longitudinal spin Seebeck effect in magnetic multilayers

〇Rafael Ramos^1,2,3, Takashi Kikkawa⁴, Myriam H. Aguirre^1,5,6, Irene Lucas^1,7, Alberto Anadon^1,5, Takafumi Oyake⁸, Ken-ichi Uchida^4,9, Hiroto Adachi^3,10, Junichiro Shiomi⁸, Pedro A. Algarabel^5,11, Luis Morellon^1,5, Sadamichi Maekawa^3,10, Eiji Saitoh^2,3,4,10, M. Ricardo Ibarra^1,5,6 (1.INA, Univ. of Zaragoza, 2.WPI-AIMR, Tohoku Univ., 3.ERATO-SQR, 4.IMR, Tohoku Univ., 5.Dep. Phys. Cond. Matter, Univ. of Zaragoza, 6.Lab. Adv. Microsc., Univ. of Zaragoza, 7.ARAID, 8.Univ. of Tokyo, 9.PRESTO, 10.JAEA, 11.ICMA, CSIC-Univ. of Zaragoza)

Sessions

10 Spintronics and Magnetics » 10.2 Spin torque, spin current, circuits, and measurement technologies

[14p-2J-5~18] 10.2 Spin torque, spin current, circuits, and measurement technologies

△ [14p-2J-5] Fast spin-transfer-torque switching in a spin-valve nanopillar having a conically magnetized free layer

▲ [14p-2J-6] Fabrication of p-SAF Structure with Strong Interlayer Exchange Coupling

▼ [14p-2J-7] Wire width dependence of current-induced domain wall motion properties

▼ [14p-2J-8] Switching characteristics of CoFeB-MgO magnetic tunnel junctions in the ns regime

▲ [14p-2J-9] Anti-damping spin transfer torque through epitaxial Nickel oxide

▲ [14p-2J-10] Formation and Dynamics of Magnetic Vortex in Co-Based Heusler Alloys

▼ [14p-2J-11] Spin Torque-Induced Vortex Oscillation in Co₂(Fe, Mn)Si Heusler Alloy

▼ [14p-2J-12] Microstructure design of Spin-Torque-Oscillator for microwave assisted magnetic recording applications using micromagnetic simulation

▲ [14p-2J-13] Reduction of bias current density using Heusler alloy spin injection layer in mag-flip spin-torque oscillator devices for microwave-assisted magnetic recording

▼ [14p-2J-14] Experimental determination of the spin relaxation mechanism in highly-doped n-type germanium epilayers

▲ [14p-2J-15] Spin-charge conversion modulation via ionic liquid gate in a single-layer graphene.

▼ [14p-2J-16] Suppression of spin pumping efficiency at low temperature in Pt/YIG thin films

▲ [14p-2J-17] Investigation of gate-voltage dependence of spin accumulation signal in nondegenerate Si

▼ [14p-2J-18] Spin injection into the topological crystalline insulator SnTe using spin pumping

[15a-3A-1~11] 10.2 Spin torque, spin current, circuits, and measurement technologies

▼ [15a-3A-1] Pulse width dependence of a spin-orbit torque induced magnetization switching

▲ [15a-3A-2] Spin-orbit torque induced switching in an antiferromagnet/ferromagnet heterostructure

▼ [15a-3A-3] Magnetization reversal induced by spin-orbit torque in a nanoscle Ta/CoFeB/MgO dot

▲ [15a-3A-4] Spin-orbit torques in ferromagnetic bilayer

▼ [15a-3A-5] Inverse-magnetostriction-induced switching current reduction for spin-transfer torque MTJs

▼ [15a-3A-6] Observation of Spin Transport through Oxide Interfaces

▼ [15a-3A-7] Gate control of magneto-transport properties in Ta thin film

[15a-3A-8] Interfacial magneto anisotropy in CoFeB/MgO investigated by ferromagnetic resonance

[15a-3A-9] Fabrication of spin injection devices using Ni₇₈Fe₂₂ thin-film edge between low-melting-point glasses

▲ [15a-3A-10] All-oxide spin Seebeck devices using RuO₂ films depending on annealing temperature

▲ [15a-3A-11] Observation of an unexpected enhancement of the longitudinal spin Seebeck effect in magnetic multilayers

Authentication

Sessions

10 Spintronics and Magnetics » 10.2 Spin torque, spin current, circuits, and measurement technologies

[14p-2J-5~18] 10.2 Spin torque, spin current, circuits, and measurement technologies

△ [14p-2J-5] Fast spin-transfer-torque switching in a spin-valve nanopillar having a conically magnetized free layer

▲ [14p-2J-6] Fabrication of p-SAF Structure with Strong Interlayer Exchange Coupling

▼ [14p-2J-7] Wire width dependence of current-induced domain wall motion properties

▼ [14p-2J-8] Switching characteristics of CoFeB-MgO magnetic tunnel junctions in the ns regime

▲ [14p-2J-9] Anti-damping spin transfer torque through epitaxial Nickel oxide

▲ [14p-2J-10] Formation and Dynamics of Magnetic Vortex in Co-Based Heusler Alloys

▼ [14p-2J-11] Spin Torque-Induced Vortex Oscillation in Co2(Fe, Mn)Si Heusler Alloy

▼ [14p-2J-12] Microstructure design of Spin-Torque-Oscillator for microwave assisted magnetic recording applications using micromagnetic simulation

▲ [14p-2J-13] Reduction of bias current density using Heusler alloy spin injection layer in mag-flip spin-torque oscillator devices for microwave-assisted magnetic recording

▼ [14p-2J-14] Experimental determination of the spin relaxation mechanism in highly-doped n-type germanium epilayers

▲ [14p-2J-15] Spin-charge conversion modulation via ionic liquid gate in a single-layer graphene.

▼ [14p-2J-16] Suppression of spin pumping efficiency at low temperature in Pt/YIG thin films

▲ [14p-2J-17] Investigation of gate-voltage dependence of spin accumulation signal in nondegenerate Si

▼ [14p-2J-18] Spin injection into the topological crystalline insulator SnTe using spin pumping

[15a-3A-1~11] 10.2 Spin torque, spin current, circuits, and measurement technologies

▼ [15a-3A-1] Pulse width dependence of a spin-orbit torque induced magnetization switching

▲ [15a-3A-2] Spin-orbit torque induced switching in an antiferromagnet/ferromagnet heterostructure

▼ [15a-3A-3] Magnetization reversal induced by spin-orbit torque in a nanoscle Ta/CoFeB/MgO dot

▲ [15a-3A-4] Spin-orbit torques in ferromagnetic bilayer

▼ [15a-3A-5] Inverse-magnetostriction-induced switching current reduction for spin-transfer torque MTJs

▼ [15a-3A-6] Observation of Spin Transport through Oxide Interfaces

▼ [15a-3A-7] Gate control of magneto-transport properties in Ta thin film

[15a-3A-8] Interfacial magneto anisotropy in CoFeB/MgO investigated by ferromagnetic resonance

[15a-3A-9] Fabrication of spin injection devices using Ni78Fe22 thin-film edge between low-melting-point glasses

▲ [15a-3A-10] All-oxide spin Seebeck devices using RuO2 films depending on annealing temperature

▲ [15a-3A-11] Observation of an unexpected enhancement of the longitudinal spin Seebeck effect in magnetic multilayers

Authentication

▼ [14p-2J-11] Spin Torque-Induced Vortex Oscillation in Co₂(Fe, Mn)Si Heusler Alloy

[15a-3A-9] Fabrication of spin injection devices using Ni₇₈Fe₂₂ thin-film edge between low-melting-point glasses

▲ [15a-3A-10] All-oxide spin Seebeck devices using RuO₂ films depending on annealing temperature