Poster presentation

[12p-P10-1~8] 8.3 deposition of thin film and surface treatment

Thu. Mar 12, 2015 4:00 PM - 6:00 PM P10 (Gymnasium)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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4:00 PM - 6:00 PM

[12p-P10-1] Preparing of functional thin films by plasma process using powder target ~Depo. rate~

〇Hiroharu Kawasaki¹, Tamiko Ohshima¹, Yoshihito Yagyu¹, Takeshi Ihara¹, Yuki Tanaka¹, Yoshiaki Suda¹ (1.Nat.l Ins. Tech., Sasebo Col.)

4:00 PM - 6:00 PM

[12p-P10-2] Production and evaluation of RF magnetized plasma for target uniform utilization

〇Yasunori Ohtsu¹, Shohei Tsuruta¹, Tsubasa Ide¹, Tabaru Tatsuo², Morito Akiyama² (1.Saga Uiniv., 2.AIST Kyushu)

4:00 PM - 6:00 PM

[12p-P10-3] Influence of groove depth on high-density capacitively coupled plasma with RF ring-shaped hollow electrode

〇Yasunori Ohtsu¹, Naoki Matsumoto¹ (1.Saga Univ.)

4:00 PM - 6:00 PM

△ [12p-P10-4] Fast rate lateral epitaxial overgrowth by mesoplasma chemical vapor deposition

〇Tetsuro Koyano¹, Yusuke Imamura¹, Makoto Kambara¹ (1.UTokyo)

4:00 PM - 6:00 PM

[12p-P10-5] Hydrophilzation of polyimide surface using Inward-plasma

〇ryou Kanou¹, Hiroshi Suga¹, Satoshi Takahashi², Yuuya Shirayama², Syunichirou Shinbori², Tetsuo Shimizu³ (1.CIT, 2.Sanyou Co.,Ltd., 3.AIST)

4:00 PM - 6:00 PM

[12p-P10-6] Surface Treatment using Microwave Plasma for the Semiconductor Emitter of Thermionic Energy Converter

〇(M1)Kengo Inoue¹, Akihisa Ogino¹, Watanabe Takatoshi² (1.Graduate School of Engineering, Shizuoka Univ., 2.Shizuoka Univ.)

4:00 PM - 6:00 PM

[12p-P10-7] Fabrication of a-Si:H:F at Cryogenic Temperature and Crystallization by Laser Annealing

〇Nao Sakamaki¹, Tetsuya Sato¹, Kiyokazu Nakagawa¹ (1.Univ. of Yamanashi)

4:00 PM - 6:00 PM

[12p-P10-8] Fabrication of a-TiN_X thin films by plasma-enhanced atomic layer deposition at low temperature

〇ByeongHak Yoo¹, Keita Seki¹, Tetsu Sato¹ (1.Univ. of Yamanashi)

Oral presentation

[13a-A27-1~13] 8.3 deposition of thin film and surface treatment

Fri. Mar 13, 2015 9:00 AM - 12:30 PM A27 (6A-202)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[13a-A27-1] Deposition Rate Evaluation of VHF-DC Superimposed Magnetron Sputter

〇Takashi Fukui¹, Yuushi Fukuoka¹, Noriharu Takada², Kensuke Sasai¹, Hirotaka Toyoda^1,³ (1.Nagoya Univ., 2.Technical Center, 3.PLANT, Nagoya Univ.)

9:15 AM - 9:30 AM

[13a-A27-2] ITO thin films fabricated by hybrid facing-target sputtering on PET films

〇Shinichi Morohashi¹, Tsukasa Tanimoto¹, Keisuke Tsujita¹, Shunya Arakawa¹, Naoyuki Harada¹, Takuya Murata¹ (1.Yamaguchi Univ.)

9:30 AM - 9:45 AM

[13a-A27-3] Effect of Substrate Position on the Orientation in Tungsten films during RF Magnetron Sputter Deposition

〇Hirofumi Fujiwara¹, Hiroshi Tsuji¹, Yasuhito Gotoh¹ (1.Kyoto Univ.)

9:45 AM - 10:00 AM

[13a-A27-4] Behavior of excitated Ar atoms in DC magnetron sputtering plasma using carbon target

〇(M1)yusuke sago¹, takayuki ohta¹, akinori oda², hiroyuki kousaka³ (1.Meijo Univ., 2.Chiba Inst. Technol., 3.Nagoya Univ.)

10:00 AM - 10:15 AM

[13a-A27-5] Sputtering Deposition using a Ti Powder Targets of Different Particle Sizes

〇Tamiko Ooshima¹, Takashi Maeda¹, Yuki Tanaka¹, Hiroharu Kawasaki¹, Yoshihito Yagyu¹, Takeshi Ihara¹, Yoshiaki Suda¹ (1.Nat.Inst.of Tech.,Sasebo Col.)

10:15 AM - 10:30 AM

[13a-A27-6] Effects of Substrate Temperature on High Speed Layer Exchange Ge Crystallization at Low Temperature using Sputtering Method

〇Kazunori Koga¹, Daiki Ichida¹, Shinji Hashimoto¹, Hyunwoong Seo¹, Daisuke Yamashita¹, Naho Itagaki^1,², Masaharu Shiratani¹ (1.Kyushu Univ., 2.JST PRESTO)

10:30 AM - 10:45 AM

[13a-A27-7] Contribution of Cluster Incorporation and Surface Reactions of Radicals to Si-H₂ Bond Formation in Hydrogenated Amorphous Silicon Thin Films

〇Kazunori Koga¹, Susumu Toko¹, Yoshihiro Torigoe¹, Kimitaka Keya¹, Hyunwoong Seo¹, Naho Itagaki^1,², Masaharu Shiratani¹ (1.Kyushu Univ., 2.JST PRESTO)

Break （10:45 AM - 11:00 AM）

11:00 AM - 11:15 AM

△ [13a-A27-8] Film thickness dependence on physical properties of Ni films prepared on ABS resin using Multipolar Magnetic Plasma Confinement assisted by Inductively Coupled Plasma

〇Tomomi Suwa¹, Sho Miyashita¹, Tatsunori Koda¹, Suguru Morihisa¹, Hiroshi Toyota¹ (1.Hiroshima Inst. Tech.)

11:15 AM - 11:30 AM

[13a-A27-9] Low-temperature Deposition of a-IGZO Thin Films with Plasma Enhanced Reactive Sputtering and Its Characterization

Yuichi Setsuhara¹, Keitaro Nakata¹, Yutaro Suyama¹, 〇Kosuke Takenaka¹, Giichiro Uchida¹, Akinori Ebe² (1.Osaka Univ., 2.EMD Corp.)

11:30 AM - 11:45 AM

△ [13a-A27-10] Effects of ion irradiation on film structures and electronic properties of amorphous carbon films grown by plasma-enhanced chemical vapor deposition system

〇Hirotsugu Sugiura¹, Lingyun Jia¹, Da Xu¹, Masayuki Nakamura¹, Hiroki Kondo¹, Kenji Ishikawa¹, Keigo Takeda¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

11:45 AM - 12:00 PM

[13a-A27-11] Dissociation process of CH₄ and SiH₄

〇Toshio Hayashi¹, Kenji Ishikawa¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya Univ.)

12:00 PM - 12:15 PM

[13a-A27-12] Analysis of Amino Group Formation on Polystyrene Surfaces by Nitrogen-Hydrogen Plasma Irradiation

〇(M1)kensaku goto¹, dai itsuki¹, michiro isobe¹, satoshi sugimoto¹, satoshi hamaguchi¹ (1.Osaka Univ.)

12:15 PM - 12:30 PM

△ [13a-A27-13] Color change of the plasma indicator by Ar/O₂ plasma

〇Hirokazu Miyazaki¹, Keita Hishikawa¹, Yu Yamakawa¹, Kazuhiro Uneyama¹, Hiroshi Inoue¹ (1.SAKURA COLOR PROD.)

Sessions

8 Plasma Electronics » 8.3 deposition of thin film and surface treatment

[12p-P10-1~8] 8.3 deposition of thin film and surface treatment

[12p-P10-1] Preparing of functional thin films by plasma process using powder target ~Depo. rate~

[12p-P10-2] Production and evaluation of RF magnetized plasma for target uniform utilization

[12p-P10-3] Influence of groove depth on high-density capacitively coupled plasma with RF ring-shaped hollow electrode

△ [12p-P10-4] Fast rate lateral epitaxial overgrowth by mesoplasma chemical vapor deposition

[12p-P10-5] Hydrophilzation of polyimide surface using Inward-plasma

[12p-P10-6] Surface Treatment using Microwave Plasma for the Semiconductor Emitter of Thermionic Energy Converter

[12p-P10-7] Fabrication of a-Si:H:F at Cryogenic Temperature and Crystallization by Laser Annealing

[12p-P10-8] Fabrication of a-TiN_X thin films by plasma-enhanced atomic layer deposition at low temperature

[13a-A27-1~13] 8.3 deposition of thin film and surface treatment

[13a-A27-1] Deposition Rate Evaluation of VHF-DC Superimposed Magnetron Sputter

[13a-A27-2] ITO thin films fabricated by hybrid facing-target sputtering on PET films

[13a-A27-3] Effect of Substrate Position on the Orientation in Tungsten films during RF Magnetron Sputter Deposition

[13a-A27-4] Behavior of excitated Ar atoms in DC magnetron sputtering plasma using carbon target

[13a-A27-5] Sputtering Deposition using a Ti Powder Targets of Different Particle Sizes

[13a-A27-6] Effects of Substrate Temperature on High Speed Layer Exchange Ge Crystallization at Low Temperature using Sputtering Method

[13a-A27-7] Contribution of Cluster Incorporation and Surface Reactions of Radicals to Si-H₂ Bond Formation in Hydrogenated Amorphous Silicon Thin Films

△ [13a-A27-8] Film thickness dependence on physical properties of Ni films prepared on ABS resin using Multipolar Magnetic Plasma Confinement assisted by Inductively Coupled Plasma

[13a-A27-9] Low-temperature Deposition of a-IGZO Thin Films with Plasma Enhanced Reactive Sputtering and Its Characterization

△ [13a-A27-10] Effects of ion irradiation on film structures and electronic properties of amorphous carbon films grown by plasma-enhanced chemical vapor deposition system

[13a-A27-11] Dissociation process of CH₄ and SiH₄

[13a-A27-12] Analysis of Amino Group Formation on Polystyrene Surfaces by Nitrogen-Hydrogen Plasma Irradiation

△ [13a-A27-13] Color change of the plasma indicator by Ar/O₂ plasma

Authentication

Sessions

8 Plasma Electronics » 8.3 deposition of thin film and surface treatment

[12p-P10-1~8] 8.3 deposition of thin film and surface treatment

△ [12p-P10-4] Fast rate lateral epitaxial overgrowth by mesoplasma chemical vapor deposition

[13a-A27-1~13] 8.3 deposition of thin film and surface treatment

△ [13a-A27-8] Film thickness dependence on physical properties of Ni films prepared on ABS resin using Multipolar Magnetic Plasma Confinement assisted by Inductively Coupled Plasma

△ [13a-A27-10] Effects of ion irradiation on film structures and electronic properties of amorphous carbon films grown by plasma-enhanced chemical vapor deposition system

△ [13a-A27-13] Color change of the plasma indicator by Ar/O2 plasma

Authentication

△ [13a-A27-13] Color change of the plasma indicator by Ar/O₂ plasma