[15a-B9-1~6] 13.3 Insulator technology

Thu. Sep 15, 2016 10:15 AM - 11:45 AM B9 (Exhibition Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:15 AM - 10:30 AM

△ [15a-B9-1] Role of high-k interlayer on characteristics for DRAM capacitors with ZrO₂/high-k/ZrO₂ insulating multilayer

〇(M1)Takashi Onaya^1,2, Toshihide Nabatame^2,3, Tomomi Sawada^2,3, Kazunori Kurishima^1,2, Naomi Sawamoto¹, Akihiko Ohi², Toyohiro Chikyo², Atsushi Ogura¹ (1.Meiji Univ., 2.NIMS WPI-MANA, 3.JST-CREST)

10:30 AM - 10:45 AM

△ [15a-B9-2] Electric characteristics of ALD Al₂O₃ films formed using different oxidants

〇Satoshi Okubo¹, Daisuke Matsumura¹, Atsushi Hiraiwa¹, Hiroshi Kawarada¹ (1.Waseda University)

10:45 AM - 11:00 AM

[15a-B9-3] Annealing effect on electric characteristics of atomic-layer-deposition Al₂O₃ films

〇Atsushi Hiraiwa^1,3, Daisuke Matsumura², Satoshi Okubo², Hiroshi Kawarada^1,2 (1.RONL, Waseda Univ., 2.FSE, Waseda Univ., 3.IMaSS, Nagoya Univ.)

11:00 AM - 11:15 AM

[15a-B9-4] Inner Potential Distribution and Interface Dipoles in HfO₂/SiO₂/Si(100) Structure as Evaluated by XPS

〇Nobuyuki Fujimura¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

11:15 AM - 11:30 AM

[15a-B9-5] Mechanism of Dipole Layer Formation at High-k/SiO₂ Interface:
Possibility of Oxygen Ion Migration Induced by the Imbalance of Multipole Potentials

〇(M2)Ryota Kunugi¹, Nobuhiro Nakagawa¹, Takanobu Watanabe¹ (1.Waseda Univ.)

11:30 AM - 11:45 AM

▼ [15a-B9-6] Consideration on the Origin of Dipole Layer Formation at Dielectric Interfaces with Different Anions (Fluorine, Oxygen and Nitrogen)

〇(D)Jiayang Fei¹, Ryota Kunugi², Takanobu Watanabe², Koji Kita¹ (1.The Univ. of Tokyo, 2.Waseda Univ.)

Session information

[15a-B9-1~6] 13.3 Insulator technology

△ [15a-B9-1] Role of high-k interlayer on characteristics for DRAM capacitors with ZrO₂/high-k/ZrO₂ insulating multilayer

△ [15a-B9-2] Electric characteristics of ALD Al₂O₃ films formed using different oxidants

[15a-B9-3] Annealing effect on electric characteristics of atomic-layer-deposition Al₂O₃ films

[15a-B9-4] Inner Potential Distribution and Interface Dipoles in HfO₂/SiO₂/Si(100) Structure as Evaluated by XPS

[15a-B9-5] Mechanism of Dipole Layer Formation at High-k/SiO₂ Interface:
Possibility of Oxygen Ion Migration Induced by the Imbalance of Multipole Potentials

▼ [15a-B9-6] Consideration on the Origin of Dipole Layer Formation at Dielectric Interfaces with Different Anions (Fluorine, Oxygen and Nitrogen)

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Session information

[15a-B9-1~6] 13.3 Insulator technology

△ [15a-B9-1] Role of high-k interlayer on characteristics for DRAM capacitors with ZrO2/high-k/ZrO2 insulating multilayer

△ [15a-B9-2] Electric characteristics of ALD Al2O3 films formed using different oxidants

[15a-B9-3] Annealing effect on electric characteristics of atomic-layer-deposition Al2O3 films

[15a-B9-4] Inner Potential Distribution and Interface Dipoles in HfO2/SiO2/Si(100) Structure as Evaluated by XPS

[15a-B9-5] Mechanism of Dipole Layer Formation at High-k/SiO2 Interface:Possibility of Oxygen Ion Migration Induced by the Imbalance of Multipole Potentials

▼ [15a-B9-6] Consideration on the Origin of Dipole Layer Formation at Dielectric Interfaces with Different Anions (Fluorine, Oxygen and Nitrogen)

Authentication

△ [15a-B9-1] Role of high-k interlayer on characteristics for DRAM capacitors with ZrO₂/high-k/ZrO₂ insulating multilayer

△ [15a-B9-2] Electric characteristics of ALD Al₂O₃ films formed using different oxidants

[15a-B9-3] Annealing effect on electric characteristics of atomic-layer-deposition Al₂O₃ films

[15a-B9-4] Inner Potential Distribution and Interface Dipoles in HfO₂/SiO₂/Si(100) Structure as Evaluated by XPS

[15a-B9-5] Mechanism of Dipole Layer Formation at High-k/SiO₂ Interface:
Possibility of Oxygen Ion Migration Induced by the Imbalance of Multipole Potentials