Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[22a-W541-1~10] 13.8 Compound and power electron devices and process technology

Tue. Mar 22, 2016 9:00 AM - 11:45 AM W541 (W5)

Seiji Nakamura(TMU)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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9:00 AM - 9:15 AM

[22a-W541-1] Estimation of ALD-HfO₂/AlGaN interface with post-deposition annealing by X-ray photoelectron spectroscopy using synchrotron radiation

〇Toshiharu Kubo¹, Gosuke Nishino¹, Takashi Egawa¹ (1.Nagoya Inst. Tech.)

9:15 AM - 9:30 AM

△ [22a-W541-2] Study on mechanism of contact resistance reduction on ohmic contacts with uneven AlGaN layers for AlGaN/GaN HEMTs

〇Yusuke Takei¹, Tomohiro Shimoda¹, Masayasu Takahashi¹, Kazuo Tsutsui¹, Wataru Saito², Kuniyuki Kakushima¹, Hitoshi Wakabayashi¹, Hiroshi Iwai¹ (1.Tokyo Inst. Technol., 2.Toshiba)

9:30 AM - 9:45 AM

[22a-W541-3] Current-Voltage Characteristics of TiN Electrodes on pGaN with Fe Layer Insertion

〇Yuta Ikeuchi¹, Hitoshi Wakabayashi¹, Kazuo Tsutsui¹, Hiroshi Iwai¹, Kuniyuki Kakushima¹ (1.Tokyo Tech.IGSSE)

9:45 AM - 10:00 AM

[22a-W541-4] Investigation of Thermal Oxidation Process in Low-defect Density GaN Substrate

〇Takahiro Yamada¹, Joyo Ito¹, Ryohei Asahara¹, Kenta Watanabe¹, Mikito Nozaki¹, Satoshi Nakazawa², Yoshiharu Anda², Masahiro Ishida², Tetsuzo Ueda², Akitaka Yoshigoe³, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ., 2.Panasonic, 3.JAEA)

10:00 AM - 10:15 AM

[22a-W541-5] Improvement of MOS Interface Properties by Thermal Oxidation of GaN Surface

〇Takahiro Yamada¹, Joyo Ito¹, Ryohei Asahara¹, Kenta Watanabe¹, Mikito Nozaki¹, Takuji Hosoi¹, Takayoshi Shimura¹, Heiji Watanabe¹ (1.Osaka Univ.)

10:30 AM - 10:45 AM

△ [22a-W541-6] Effects of high-temperature anneal on operation characteristics of GaN MOSFET

〇Kenya Nishiguchi¹, Tamotsu Hashizume¹ (1.RCIQE)

10:45 AM - 11:00 AM

[22a-W541-7] Insulator/semiconductor interface fixed charge in InAlN-GaN metal/insulator/semiconductor structures with Al₂O₃ or AlTiO gate insulator

〇Shinya Yamaguchi¹, Toshimasa Ui¹, Takahiro Hasegawa¹ (1.JAIST)

11:00 AM - 11:15 AM

△ [22a-W541-8] Electrical Characterization of SiO₂ / GaN Vertical MOS Capacitor treated by
High Pressure Water Vapor Annealing

〇Yuta Tominaga¹, Ueno Katsunori², Koji Yoshitsugu¹, Tada Yuki¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST, 2.Fuji Electric)

11:15 AM - 11:30 AM

△ [22a-W541-9] Suppression of isolation leakage current in AlGaN/GaN HEMTs by neutral-beam etching

〇Fuyumi Hemmi¹, Cedric Thomas², Yi-Chun Lai³, Akio Higo³, Alex Guo⁴, Shireen Warnock⁴, Jesus A. del Alamo⁴, Seiji Samukawa^2,3, Taiichi Otsuji¹, Tetsuya Suemitsu¹ (1.RIEC Tohoku Univ., 2.IFS Tohoku Univ., 3.AIMR Tohoku Univ., 4.MTL MIT)

11:30 AM - 11:45 AM

[22a-W541-10] Metal/GaN photocatalytic films with both oxidation and reduction reaction sites

〇Yuya Uzumaki¹, Yoko Ono¹, Shigeo Ogawa¹, Yoshitaka Taniyasu², Kazuhide Kumakura², Takeshi Komatsu¹ (1.NTT Sende Lab., 2.NTT Bussei Lab.)

Session information

[22a-W541-1~10] 13.8 Compound and power electron devices and process technology

[22a-W541-1] Estimation of ALD-HfO₂/AlGaN interface with post-deposition annealing by X-ray photoelectron spectroscopy using synchrotron radiation

△ [22a-W541-2] Study on mechanism of contact resistance reduction on ohmic contacts with uneven AlGaN layers for AlGaN/GaN HEMTs

[22a-W541-3] Current-Voltage Characteristics of TiN Electrodes on pGaN with Fe Layer Insertion

[22a-W541-4] Investigation of Thermal Oxidation Process in Low-defect Density GaN Substrate

[22a-W541-5] Improvement of MOS Interface Properties by Thermal Oxidation of GaN Surface

△ [22a-W541-6] Effects of high-temperature anneal on operation characteristics of GaN MOSFET

[22a-W541-7] Insulator/semiconductor interface fixed charge in InAlN-GaN metal/insulator/semiconductor structures with Al₂O₃ or AlTiO gate insulator

△ [22a-W541-8] Electrical Characterization of SiO₂ / GaN Vertical MOS Capacitor treated by
High Pressure Water Vapor Annealing

△ [22a-W541-9] Suppression of isolation leakage current in AlGaN/GaN HEMTs by neutral-beam etching

[22a-W541-10] Metal/GaN photocatalytic films with both oxidation and reduction reaction sites

Authentication

Session information

[22a-W541-1~10] 13.8 Compound and power electron devices and process technology

[22a-W541-1] Estimation of ALD-HfO2/AlGaN interface with post-deposition annealing by X-ray photoelectron spectroscopy using synchrotron radiation

△ [22a-W541-2] Study on mechanism of contact resistance reduction on ohmic contacts with uneven AlGaN layers for AlGaN/GaN HEMTs

[22a-W541-3] Current-Voltage Characteristics of TiN Electrodes on pGaN with Fe Layer Insertion

[22a-W541-4] Investigation of Thermal Oxidation Process in Low-defect Density GaN Substrate

[22a-W541-5] Improvement of MOS Interface Properties by Thermal Oxidation of GaN Surface

△ [22a-W541-6] Effects of high-temperature anneal on operation characteristics of GaN MOSFET

[22a-W541-7] Insulator/semiconductor interface fixed charge in InAlN-GaN metal/insulator/semiconductor structures with Al2O3 or AlTiO gate insulator

△ [22a-W541-8] Electrical Characterization of SiO2 / GaN Vertical MOS Capacitor treated byHigh Pressure Water Vapor Annealing

△ [22a-W541-9] Suppression of isolation leakage current in AlGaN/GaN HEMTs by neutral-beam etching

[22a-W541-10] Metal/GaN photocatalytic films with both oxidation and reduction reaction sites

Authentication

[22a-W541-1] Estimation of ALD-HfO₂/AlGaN interface with post-deposition annealing by X-ray photoelectron spectroscopy using synchrotron radiation

[22a-W541-7] Insulator/semiconductor interface fixed charge in InAlN-GaN metal/insulator/semiconductor structures with Al₂O₃ or AlTiO gate insulator

△ [22a-W541-8] Electrical Characterization of SiO₂ / GaN Vertical MOS Capacitor treated by
High Pressure Water Vapor Annealing