Oral presentation

[21p-W241-1~21] 10.2 Spin torque, spin current, circuits, and measurement technologies

Mon. Mar 21, 2016 1:15 PM - 7:00 PM W241 (W2・W3)

Hidekazu Saito(AIST), Kiwamu Kudo(Toshiba)

△：Young Scientist Oral Presentation Award Applied
▲：English Presentation
▼：Both Award Applied and English Presentation

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1:15 PM - 1:30 PM

[21p-W241-1] Enhancement of room-temperature spin signals in Si-based spin devices

〇Takayasu Oka¹, Mizue Ishikawa², Yuichi Fujita¹, Shinya Yamada¹, Takeshi Kanashima¹, Yoshiaki Saito², Kohei Hamaya¹ (1.Osaka Univ., 2.RDC, Toshiba)

1:30 PM - 1:45 PM

▲ [21p-W241-2] Effect of post annealing on spin accumulation and transport signals in Co₂FeSi/MgO/n⁺-Si on insulator devices

〇Ajay Tiwari¹, Tomoaki Inokuchi¹, Mizue Ishikawa¹, Hideyuki Sugiyama¹, Yoshiaki Saito¹ (1.Toshiba Corporation)

1:45 PM - 2:00 PM

▼ [21p-W241-3] An effect of gate voltage on thermally generated spin signals in Si spin-MOSFET

〇Naoto Yamashita¹, Yuichiro Ando¹, Hayato Koike², Tomoyuki Sasaki², Shinji Miwa³, Kazuhito Tanaka³, Yoshishige Suzuki³, Masashi Shiraishi¹ (1.Kyoto Univ., 2.TDK Corp., 3.Osaka Univ.)

2:00 PM - 2:15 PM

▲ [21p-W241-4] Electrical Spin Injection into δ-doped n-type Germanium Using Co₂Fe_0.4Mn_0.6Si Heusler Alloy Film

〇Takeo Koike¹, Mikihiko Oogane¹, Astuo Ono¹, Tetsurou Takada², Hidekazu Saito², Yasuo Ando¹ (1.Tohoku Univ., 2.AIST)

2:15 PM - 2:30 PM

▲ [21p-W241-5] Spin transport in a two-dimensional electron gas in an AlGaAs/GaAs structure at room temperature

〇Kenro Ohtomo¹, Yuichiro Ando¹, Teruya Shinjo¹, Tetsuya Uemura², Masashi Shiraishi¹ (1.Kyoto Univ., 2.Hokkaido Univ.)

2:30 PM - 2:45 PM

▲ [21p-W241-6] Design and analysis of electric-field-assisted four-terminal nonlocal Si-channel MOS devices

〇Daiki Kitagata¹, Taiju Akushichi¹, Yota Takamura², Yusuke Shuto¹, Satoshi Sugahara¹ (1.ISEL, Tokyo Tech, 2.Dept. of Physical Electronics, Tokyo Tech)

2:45 PM - 3:00 PM

▲ [21p-W241-7] Spin accumulation in a Si channel using a high-quality CoFe/MgO/Si spin injector

〇(D)Taiju Akushichi¹, Yota Takamura², Yusuke Shuto¹, Satoshi Sugahara¹ (1.ISEL, Tokyo Tech, 2.Dept. of Physical Electron., Tokyo Tech)

3:15 PM - 3:30 PM

[21p-W241-8] An electrical spin injection from perpendicularly magnetized FePt into GaAs/AlGaAs two dimensional electron gas channel

〇Rento Ohsugi¹, Mano Yuuko¹, Kohda Makoto¹, Nitta Junsaku¹ (1.Tohoku univ.)

3:30 PM - 3:45 PM

▲ [21p-W241-9] Investigation of the inverse Rashba-Edelstein effect in Bi/Ag and Ag/Bi on ferromagnetic insulator

〇Masayuki Matsushima¹, Sergey Dushenko^1,2, Ryo Ohshima^1,2, Yuichiro Ando¹, Teruya Shinjo¹, Masashi Shiraishi¹ (1.Kyoto Univ., 2.Osaka Univ.)

3:45 PM - 4:00 PM

▲ [21p-W241-10] Conversion of spin current into charge current in Bi_0.85Sb_0.15

〇Ryohei Kumamoto¹, Yuichiro Ando¹, Sergey Dushenko^1,2, Teruya Shinjo¹, Masashi Shiraishi¹ (1.Kyoto Univ., 2.Osaka Univ.)

4:00 PM - 4:15 PM

▼ [21p-W241-11] Quantitative analysis of the nuclear spin dynamics in GaAs with irradiation by RF magnetic field

〇(D)Mahmoud Rasly Eldesouky¹, Zhichao Lin¹, Masafumi Yamamoto¹, Tetsuya Uemura¹ (1.Hokkaido Univ.)

4:15 PM - 4:30 PM

▼ [21p-W241-12] Temperature dependence of the electromotive force
in the topological crystalline insulator SnTe induced by spin pumping

〇Akiyori Yamamoto¹, Tomonari Yamaguchi², Ryo Ishikawa², Ryota Akiyama¹, Yuki K. Wakabayashi¹, Shinji Kuroda², Shinobu Ohya¹, Masaaki Tanaka¹ (1.The Univ. of Tokyo, 2.Univ. of Tsukuba)

4:30 PM - 4:45 PM

▲ [21p-W241-13] Thermal Imaging of Spin Peltier Effect in Magnetic Insulators

Shunsuke Daimon¹, Ryo Iguchi¹, Eiji Saitoh^1,2,3,4, 〇Kenichi Uchida^1,5 (1.IMR Tohoku Univ., 2.WPI-AIMR Tohoku Univ., 3.JST ERATO-SQR, 4.ASRC JAEA, 5.JST PRESTO)

4:45 PM - 5:00 PM

[21p-W241-14] Relationship between attenuation length and Py films with an interlayer.

〇Masaki Ota¹, Shinya Kasai², Seiji Mitani², Kenji Kasahara¹, Takashi Manago¹ (1.Fukuoka Univ., 2.NIMS)

5:15 PM - 5:30 PM

▼ [21p-W241-15] Theoretical analysis of thermally-activated spin-transfer-torque switching in a conically-magnetized free layer

〇Rie Matsumoto¹, Hiroko Arai^2,1, Shinji Yuasa¹, Hiroshi Imamura¹ (1.AIST, 2.PRESTO, JST)

5:30 PM - 5:45 PM

▲ [21p-W241-16] Stability of out-of-plane precession with the application of a tilted magnetic field in spin torque oscillator having a planar free layer and a perpendicular polarizer

〇(P)ryo hiramatsu¹, hitoshi kubota¹, sumito tsunegi¹, shingo tamaru¹, kay yakushiji¹, akio fukushima¹, rie matsumoto¹, hiroshi imamura¹, shinji yuasa¹ (1.AIST)

5:45 PM - 6:00 PM

▼ [21p-W241-17] Electrical mutual synchronization in vortex spin torque oscillators

〇Sumito Tsunegi¹, Hitoshi Kubota¹, Kay Yakushiji¹, Akio Fukushima¹, Shinji Yuasa¹ (1.AIST)

6:00 PM - 6:15 PM

▼ [21p-W241-18] Influence of spin polarization of SIL on oscillation behavior of a mag-flip
spin-torque-oscillator (STO) device

〇Hossein SepehriAmin¹, S. Bosu¹, Y. Sakuraba¹, M. Hayashi¹, T. Schrefl², C. Abert³, D. Suess³, K. Hono¹ (1.NIMS, Tsukuba, Japan, 2.Danube University Krems, Austria, 3.Technical University of Vienna, Austria)

6:15 PM - 6:30 PM

▲ [21p-W241-19] Mag-flip spin torque oscillator using highly spin polarized Heusler alloy as spin injection layer for microwave assisted magnetic recording

〇(PC)Subrojati Bosu¹, Hossein Sepehri-Amin¹, Yuya Sakuraba¹, Shinya Kasai¹, Masamitsu Hayashi¹, Kazuhiro Hono¹ (1.National Institute for Materials Science, Tsukuba, Japan)

6:30 PM - 6:45 PM

▼ [21p-W241-20] Vortex Spin-Torque Oscillator using Co₂(Fe,Mn)Si Heusler Alloys with various Fe-Mn Compositions

〇(DC)Tatsuya Yamamoto¹, Takeshi Seki^1,2, Koki Takanashi¹ (1.IMR, Tohoku Univ., 2.JST-PRESTO)

6:45 PM - 7:00 PM

▲ [21p-W241-21] Analysis of Magnetization Dynamics of a Perpendicular Magnetic Nanodot Using Microwave-Magnetic-Field-Induced Diode Effect

〇Hirofumi Suto¹, Kiwamu Kudo¹, Tazumi Nagasawa¹, Taro Kanao¹, Koichi Mizushima¹, Rie Sato¹ (1.Corporate R&D Center, Toshiba)

Sessions

10 Spintronics and Magnetics » 10.2 Spin torque, spin current, circuits, and measurement technologies

[21p-W241-1~21] 10.2 Spin torque, spin current, circuits, and measurement technologies

[21p-W241-1] Enhancement of room-temperature spin signals in Si-based spin devices

▲ [21p-W241-2] Effect of post annealing on spin accumulation and transport signals in Co₂FeSi/MgO/n⁺-Si on insulator devices

▼ [21p-W241-3] An effect of gate voltage on thermally generated spin signals in Si spin-MOSFET

▲ [21p-W241-4] Electrical Spin Injection into δ-doped n-type Germanium Using Co₂Fe_0.4Mn_0.6Si Heusler Alloy Film

▲ [21p-W241-5] Spin transport in a two-dimensional electron gas in an AlGaAs/GaAs structure at room temperature

▲ [21p-W241-6] Design and analysis of electric-field-assisted four-terminal nonlocal Si-channel MOS devices

▲ [21p-W241-7] Spin accumulation in a Si channel using a high-quality CoFe/MgO/Si spin injector

[21p-W241-8] An electrical spin injection from perpendicularly magnetized FePt into GaAs/AlGaAs two dimensional electron gas channel

▲ [21p-W241-9] Investigation of the inverse Rashba-Edelstein effect in Bi/Ag and Ag/Bi on ferromagnetic insulator

▲ [21p-W241-10] Conversion of spin current into charge current in Bi_0.85Sb_0.15

▼ [21p-W241-11] Quantitative analysis of the nuclear spin dynamics in GaAs with irradiation by RF magnetic field

▼ [21p-W241-12] Temperature dependence of the electromotive force
in the topological crystalline insulator SnTe induced by spin pumping

▲ [21p-W241-13] Thermal Imaging of Spin Peltier Effect in Magnetic Insulators

[21p-W241-14] Relationship between attenuation length and Py films with an interlayer.

▼ [21p-W241-15] Theoretical analysis of thermally-activated spin-transfer-torque switching in a conically-magnetized free layer

▲ [21p-W241-16] Stability of out-of-plane precession with the application of a tilted magnetic field in spin torque oscillator having a planar free layer and a perpendicular polarizer

▼ [21p-W241-17] Electrical mutual synchronization in vortex spin torque oscillators

▼ [21p-W241-18] Influence of spin polarization of SIL on oscillation behavior of a mag-flip
spin-torque-oscillator (STO) device

▲ [21p-W241-19] Mag-flip spin torque oscillator using highly spin polarized Heusler alloy as spin injection layer for microwave assisted magnetic recording

▼ [21p-W241-20] Vortex Spin-Torque Oscillator using Co₂(Fe,Mn)Si Heusler Alloys with various Fe-Mn Compositions

▲ [21p-W241-21] Analysis of Magnetization Dynamics of a Perpendicular Magnetic Nanodot Using Microwave-Magnetic-Field-Induced Diode Effect

Authentication

Sessions

10 Spintronics and Magnetics » 10.2 Spin torque, spin current, circuits, and measurement technologies

[21p-W241-1~21] 10.2 Spin torque, spin current, circuits, and measurement technologies

[21p-W241-1] Enhancement of room-temperature spin signals in Si-based spin devices

▲ [21p-W241-2] Effect of post annealing on spin accumulation and transport signals in Co2FeSi/MgO/n+-Si on insulator devices

▼ [21p-W241-3] An effect of gate voltage on thermally generated spin signals in Si spin-MOSFET

▲ [21p-W241-4] Electrical Spin Injection into δ-doped n-type Germanium Using Co2Fe0.4Mn0.6Si Heusler Alloy Film

▲ [21p-W241-5] Spin transport in a two-dimensional electron gas in an AlGaAs/GaAs structure at room temperature

▲ [21p-W241-6] Design and analysis of electric-field-assisted four-terminal nonlocal Si-channel MOS devices

▲ [21p-W241-7] Spin accumulation in a Si channel using a high-quality CoFe/MgO/Si spin injector

[21p-W241-8] An electrical spin injection from perpendicularly magnetized FePt into GaAs/AlGaAs two dimensional electron gas channel

▲ [21p-W241-9] Investigation of the inverse Rashba-Edelstein effect in Bi/Ag and Ag/Bi on ferromagnetic insulator

▲ [21p-W241-10] Conversion of spin current into charge current in Bi0.85Sb0.15

▼ [21p-W241-11] Quantitative analysis of the nuclear spin dynamics in GaAs with irradiation by RF magnetic field

▼ [21p-W241-12] Temperature dependence of the electromotive forcein the topological crystalline insulator SnTe induced by spin pumping

▲ [21p-W241-13] Thermal Imaging of Spin Peltier Effect in Magnetic Insulators

[21p-W241-14] Relationship between attenuation length and Py films with an interlayer.

▼ [21p-W241-15] Theoretical analysis of thermally-activated spin-transfer-torque switching in a conically-magnetized free layer

▲ [21p-W241-16] Stability of out-of-plane precession with the application of a tilted magnetic field in spin torque oscillator having a planar free layer and a perpendicular polarizer

▼ [21p-W241-17] Electrical mutual synchronization in vortex spin torque oscillators

▼ [21p-W241-18] Influence of spin polarization of SIL on oscillation behavior of a mag-flipspin-torque-oscillator (STO) device

▲ [21p-W241-19] Mag-flip spin torque oscillator using highly spin polarized Heusler alloy as spin injection layer for microwave assisted magnetic recording

▼ [21p-W241-20] Vortex Spin-Torque Oscillator using Co2(Fe,Mn)Si Heusler Alloys with various Fe-Mn Compositions

▲ [21p-W241-21] Analysis of Magnetization Dynamics of a Perpendicular Magnetic Nanodot Using Microwave-Magnetic-Field-Induced Diode Effect

Authentication

▲ [21p-W241-2] Effect of post annealing on spin accumulation and transport signals in Co₂FeSi/MgO/n⁺-Si on insulator devices

▲ [21p-W241-4] Electrical Spin Injection into δ-doped n-type Germanium Using Co₂Fe_0.4Mn_0.6Si Heusler Alloy Film

▲ [21p-W241-10] Conversion of spin current into charge current in Bi_0.85Sb_0.15

▼ [21p-W241-12] Temperature dependence of the electromotive force
in the topological crystalline insulator SnTe induced by spin pumping

▼ [21p-W241-18] Influence of spin polarization of SIL on oscillation behavior of a mag-flip
spin-torque-oscillator (STO) device

▼ [21p-W241-20] Vortex Spin-Torque Oscillator using Co₂(Fe,Mn)Si Heusler Alloys with various Fe-Mn Compositions