[19a-S423-1~13] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[19a-S423-7] Minimal Fab Process using High-Speed MP and CMP Machines

〇Norio Umeyama^1,2, Kazuhiro Koga^1,2, Fumito Imura^1,2, Kazutaka Shibuya³, Takayuki Fuse³, Yoshio Nakamura³, Kouichiro Ichikawa³, Sommawan Khumpuang^1,2, Shiro Hara^1,2 (1.AIST, 2.MINIMAL, 3.Fujikoshi Machinery)

Keywords:MINIMAL Fab,CMP,Grinding

We have tried to polish with clean and high efficiency, using two minimal machines for a mechanical polishing (MP) that can grind rapidly and a chemical mechanical polishing (CMP) that can reduce the surface roughness to a device manufacturing level. Although random grinding marks after fast MP treatment were observed, the surface roughness Ra in the subsequent CMP process approaches the value for the raw wafer, were improved. We will report on the day of the conference presentation the features and device prototyping after high speed MP and CMP processes.