The 63rd JSAP Spring Meeting, 2016

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

[19a-S423-1~13] 13.4 Si wafer processing /Si based thin film /MEMS/Integration technology

Sat. Mar 19, 2016 9:00 AM - 12:30 PM S423 (S4)

Minoru Sasaki(Toyota Tech. Inst.), Takaaki Tsunomura(Tokyo Electron Ltd.)

11:00 AM - 11:15 AM

[19a-S423-8] Half-Inch Silicon CVD Reactor Using Concentrated Infrared Light Heater (6)

NING LI1, HITOSHI HABUKA1, TAKANORI MIKAHARA2, SHIN-ICHI IKEDA2,3, YUUKI ISHIDA2,3, SHIRO HARA2,3 (1.Yokohama National Univ., 2.MINIMAL, 3.AIST)

Keywords:minimal manufacturing,CVD,silicon

To improve the surface morphology of the epitaxial film at high temperature using the CVD reactor for minimal manufacturing, we set a cooling outside of the quartz tube because it can suppress the as phase reaction and maintained it at the mirror surface.