Oral presentation

13 Semiconductors » 13.8 Compound and power electron devices and process technology

[6a-C17-1~8] 13.8 Compound and power electron devices and process technology

Wed. Sep 6, 2017 9:00 AM - 11:30 AM C17 (Training Room 2)

Seiji Nakamura(TMU)

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9:00 AM - 9:30 AM

[6a-C17-1] [JSAP Paper Award Speech] 1.8mΩ・cm² vertical GaN-based trench metal–oxide–semiconductor field-effect transistors
on a free-standing GaN substrate for 1.2-kV-class operation

〇Tohru Oka¹, Tsutomu Ina¹, Yukihisa Ueno¹, Junya Nishii¹ (1.Toyoda Gosei)

9:30 AM - 9:45 AM

[6a-C17-2] Evaluation of Electron Affinity of GaN(0001) by Vacuum Ultraviolet Photoelectron Spectroscopy

〇Takuya Imagawa¹, Akio Ohta¹, Nobuyuki Fujimura¹, Truyen Nguyen Xuan¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Tetsu Kachi², Koji Shiozaki², Seiichi MIyazaki¹ (1.Grad. School of Eng., Nagoya Univ, 2.IMaSS, Nagoya Univ)

9:45 AM - 10:00 AM

[6a-C17-3] Low contact resistance of Si-implanted GaN using Ti / Al electrode and analysis of electrode structure after annealing

〇Tomoaki Nishimura¹, Takeshi Kasai², Tomoyoshi Mishima¹, Kazuo Kuriyama¹, Tohru Nakamura¹ (1.Hosei Univ., 2.Chemitronics)

10:15 AM - 10:30 AM

[6a-C17-4] Evaluation of crystal damage in Mg-implanted GaN by RBS

〇Kazue Shingu¹, Kazuteru Takahashi¹, Daniel Tseng², Tohru Nakamura³, Kiyoji Ikeda³, Tomoaki Nishimura³, Tomoyoshi Mishima³ (1.Nano Science, 2.EAG, 3.Hosei Univ.)

10:30 AM - 10:45 AM

[6a-C17-5] Evaluation of crystal damage in Mg-implanted GaN by TEM

〇Kazuteru Takahashi¹, Kazue Shingu¹, Udit Sharma², Toru Nakamura³, Kiyoji Ikeda³, Nishimura Tomoaki³, Tomoyoshi Mishima³ (1.Nano Science Corp., 2.EAG, Inc., 3.Hosei Univ.)

10:45 AM - 11:00 AM

△ [6a-C17-6] Killer dislocation analysis of PN diodes on free-standing GaN substrates with different dislocation densities

〇Shigeyoshi Usami¹, Hayata Fukushima¹, Yuto Ando¹, Atsushi Tanaka^2,3, Kentaro Nagamatsu², Maki Kushimoto¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,4,5 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS, 3.NIMS, 4.Nagoya Univ. ARC, 5.Nagoya Univ. VBL)

11:00 AM - 11:15 AM

[6a-C17-7] High Sensitivity Observation of Dopant Concentration in GaN semiconductor by Phase-Shifting Electron Holography

〇Kiyotaka Nakano¹, Miko Matsumoto¹, Satoshi Anada¹, Kazuo Yamamoto¹, Yuto Ando², Masaya Ogura², Si-Young Bae², Atsushi Tanaka², Yoshio Honda², Yukari Ishikawa¹, Hiroshi Amano², Tsukasa Hirayama¹ (1.JFCC, 2.Nagoya Univ.)

11:15 AM - 11:30 AM

[6a-C17-8] Electric Potential Distribution around GaInN/GaN Quantum Wells observed by High Sensitivity Phase-Shifting Electron Holography

〇KAZUO YAMAMOTO¹, Miko Matsumoto¹, Kiyotaka Nakano¹, Daiki Takasuka², Tetsuya Takeuchi², Satoshi Kamiyama², Tsukasa Hirayama¹ (1.JFCC, 2.Meijo Univ.)

Session information

[6a-C17-1~8] 13.8 Compound and power electron devices and process technology

[6a-C17-1] [JSAP Paper Award Speech] 1.8mΩ・cm² vertical GaN-based trench metal–oxide–semiconductor field-effect transistors
on a free-standing GaN substrate for 1.2-kV-class operation

[6a-C17-2] Evaluation of Electron Affinity of GaN(0001) by Vacuum Ultraviolet Photoelectron Spectroscopy

[6a-C17-3] Low contact resistance of Si-implanted GaN using Ti / Al electrode and analysis of electrode structure after annealing

[6a-C17-4] Evaluation of crystal damage in Mg-implanted GaN by RBS

[6a-C17-5] Evaluation of crystal damage in Mg-implanted GaN by TEM

△ [6a-C17-6] Killer dislocation analysis of PN diodes on free-standing GaN substrates with different dislocation densities

[6a-C17-7] High Sensitivity Observation of Dopant Concentration in GaN semiconductor by Phase-Shifting Electron Holography

[6a-C17-8] Electric Potential Distribution around GaInN/GaN Quantum Wells observed by High Sensitivity Phase-Shifting Electron Holography

Authentication

Session information

[6a-C17-1~8] 13.8 Compound and power electron devices and process technology

[6a-C17-1] [JSAP Paper Award Speech] 1.8mΩ・cm2 vertical GaN-based trench metal–oxide–semiconductor field-effect transistorson a free-standing GaN substrate for 1.2-kV-class operation

[6a-C17-2] Evaluation of Electron Affinity of GaN(0001) by Vacuum Ultraviolet Photoelectron Spectroscopy

[6a-C17-3] Low contact resistance of Si-implanted GaN using Ti / Al electrode and analysis of electrode structure after annealing

[6a-C17-4] Evaluation of crystal damage in Mg-implanted GaN by RBS

[6a-C17-5] Evaluation of crystal damage in Mg-implanted GaN by TEM

△ [6a-C17-6] Killer dislocation analysis of PN diodes on free-standing GaN substrates with different dislocation densities

[6a-C17-7] High Sensitivity Observation of Dopant Concentration in GaN semiconductor by Phase-Shifting Electron Holography

[6a-C17-8] Electric Potential Distribution around GaInN/GaN Quantum Wells observed by High Sensitivity Phase-Shifting Electron Holography

Authentication

[6a-C17-1] [JSAP Paper Award Speech] 1.8mΩ・cm² vertical GaN-based trench metal–oxide–semiconductor field-effect transistors
on a free-standing GaN substrate for 1.2-kV-class operation