[8a-C21-1~11] 13.4 Si系プロセス・Si系薄膜・配線・MEMS・集積化技術

▼ [8a-C21-3] Effect of carbon on boron clustering and diffusion in silicon studied by atom probe tomography

〇(D)Yuan Tu¹、Yasuo Shimizu¹、Masao Inoue²、Yorinobu Kunimune³、Yasuhiro Shimada³、Toshiharu Katayama³、Takashi Ide³、Koji Inoue¹、Yasuyoshi Nagai¹ (1.IMR, Tohoku Univ.、2.Renesas Electronics Corp.、3.Renesas Semiconductor Manufacturing Co., Ltd.)

キーワード：coimplantation, clustering, atom probe

Boron (B) implantation is widely used for p-type doping in silicon device fabrication. Carbon (C) co-implantation is a promising method to suppress B diffusion. Atom probe tomography (APT) is capable of obtaining a three-dimensional elemental distribution map with nearly atomic scale resolution. In this work, APT is used to investigate the effect of C on B clustering and diffusion. Our result indicate that the B cluster dissolving in B&C coimplanted sample is reduced by the presence of C, which is a possible reason for the suppression of B diffusion.