[8a-C21-1~11] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[8a-C21-5] Conformal Doping Technique for Shallow Junction Using Sol-Gel Coating and Flash Lamp Annealing

〇Kazuhiko Fuse¹, Hideaki Tanimura¹, Takayuki Aoyama¹, Shinichi Kato¹, Ippei Kobayashi¹ (1.SCREEN)

Keywords:Flash lamp annealing (FLA), Conformal doping, Ultra Shallow Junction (USJ)

In the junction formation of Source/Drain Extension (SDE) region for FinFETs, a conformal doping technique with a high dopant concentration and defect-free is required. In this work, we demonstrated the formation of ultra-shallow n+/p junctions in Si using an arsenic-doped Sol-Gel Coating (SGC) and Flash Lamp Annealing (FLA). As a result, high arsenic dopant concentration with a good junction profile was realized with FLA. These results indicate that this technique can be used for conformal doping of the SDE in FinFETs fabricated using advanced 3D device engineering.