〇(D)kentarou matsuura¹, Jun'ichi Shimizu¹, Mayato Toyama¹, Takumi Ohashi¹, Iriya Muneta¹, Seiya Ishihara², Kuniyuki Kakushima¹, Kazuo Tsutsui¹, Atsushi Ogura², Hitoshi Wakabayashi¹ (1.Tokyotech, 2.Meiji Univ.)

3:45 PM - 4:15 PM

[19p-233-7] Let’s think about a thermoelectric device supporting a smartwatch

〇Masashi Kurosawa^1,2,3 (1.Grad. Sch. of Eng., Nagoya Univ., 2.IAR, Nagoya Univ., 3.JST-PRESTO)

4:15 PM - 4:45 PM

[19p-233-8] Ultra-low power tunnel transistors with oxide semiconductor and group-IV semiconductor

〇Kimihiko Kato¹, Hiroaki Matsui¹, Hitoshi Tabata¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

4:45 PM - 5:00 PM

[19p-233-9] Ultra-sharp Switching by Using Non-equilibrium State in VO₂ Phase Transition Transistors

〇Takeaki Yajima¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.Univ. of Tokyo)

5:00 PM - 5:30 PM

[19p-233-10] Ultralow Power Si CMOS Logic Circuit Enabled by Ferroelectric Material

〇Masaharu Kobayashi¹ (1.IIS, Univ. Tokyo)

5:30 PM - 5:45 PM

△ [19p-233-11] Device and Process Design for HfO₂-Based Ferroelectric Tunnel Junction Memory toward Large Tunneling Electroresistance Effect and Multi-level Cell

〇(M2)Yusaku Tagawa¹, Mo Fei¹, Saraya Takuya¹, Hiramoto Toshiro¹, Kobayashi Masaharu¹ (1.IIS, Univ. of Tokyo)

5:45 PM - 5:50 PM

[19p-233-12] Closing remarks

〇Katsunori Makihara¹ (1.Nagoya Univ.)

Sessions

Symposium » Create a path of future semiconductor devices by new materials and processes

[19p-233-1~12] Create a path of future semiconductor devices by new materials and processes

[19p-233-1] Opening remarks

[19p-233-2] Electronic and Atomistic Swiching Mechanism of Future Emerging Memories

[19p-233-3] STDP characterization of MgO-based synapse devices and its application to neural networks

[19p-233-4] New sensor and its integration process towards IoT olfactory sensor system

[19p-233-5] Molecular Interaction with Transition-metal Dichalcogenides

[19p-233-6] Sputter-Deposited-MoS₂ nMISFETs with Top-Gate for Large Area Integration

[19p-233-7] Let’s think about a thermoelectric device supporting a smartwatch

[19p-233-8] Ultra-low power tunnel transistors with oxide semiconductor and group-IV semiconductor

[19p-233-9] Ultra-sharp Switching by Using Non-equilibrium State in VO₂ Phase Transition Transistors

[19p-233-10] Ultralow Power Si CMOS Logic Circuit Enabled by Ferroelectric Material

△ [19p-233-11] Device and Process Design for HfO₂-Based Ferroelectric Tunnel Junction Memory toward Large Tunneling Electroresistance Effect and Multi-level Cell

[19p-233-12] Closing remarks

Authentication

Sessions

Symposium » Create a path of future semiconductor devices by new materials and processes

[19p-233-1~12] Create a path of future semiconductor devices by new materials and processes

△ [19p-233-11] Device and Process Design for HfO2-Based Ferroelectric Tunnel Junction Memory toward Large Tunneling Electroresistance Effect and Multi-level Cell

Authentication

△ [19p-233-11] Device and Process Design for HfO₂-Based Ferroelectric Tunnel Junction Memory toward Large Tunneling Electroresistance Effect and Multi-level Cell