Oral presentation
13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials
Sun. Mar 18, 2018 1:00 PM - 3:45 PM B301 (53-301)
Koichiro Saga(Sony), Takashi Hasunuma(Univ. of Tsukuba)
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1:00 PM - 1:15 PM
〇Toshiaki Tsuchiya1, Masahiro Hori1, Yukinori Ono1 (1.Shizuoka Univ.)
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1:15 PM - 1:30 PM
〇Takuya Imagawa1, Akio Ohta1, Noriyuki Taoka2, Nobuyuki Fujimura1, Mitsuhisa Ikeda1, Katsunori Makihara1, Seiichi MIyazaki1 (1.Nagoya Univ, 2.AIST GaN-OIL)
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1:30 PM - 1:45 PM
〇(B)Kota Ushimaru1,2, Takahiro Harie1,2, Daisuke Kobayashi2, Tomoyuki Yamamoto1, Kazuyuki Hirose1,2 (1.Waseda univ., 2.ISAS/JAXA)
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1:45 PM - 2:00 PM
〇Sakura-Nishino Takeda1, Kazuho Morita1, Hiroshi Daimon1 (1.NAIST)
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2:15 PM - 2:30 PM
〇(M1)Shotaro Kuzukawa1, Takahiro Ono1, Tatsuro Kawano1, Hiroki Matsuyama1, Kazuhiro Kobayashi1, Hiroshi Kubota1, Takeshi Hashishin1, Masao Yoshioka2, Moriya Miyashita3, Takahiro Maeta3 (1.GSST Kumamoto Univ., 2.Faculty of Technology Kumamoto Univ., 3.GlobalWafers Japan)
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2:30 PM - 2:45 PM
〇Takahiro Ono1, Tatsuro Kawano1, Shotaro Kuzukawa1, Hiroki Matsuyama1, Yamato Murakami2, Takuya Yamamoto2, Kaito Kashiwagi2, Kazuhiro Kobayashi2, Masao Yoshioka2, Tsuyoshi Hashishin2, Hiroshi Kubota2 (1.GSST Kumamoto Univ, 2.Kumamoto Univ)
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2:45 PM - 3:00 PM
〇Rikiichi Ohno1 (1.Sony Semiconductor Solutions)
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3:00 PM - 3:15 PM
〇Syuhei Yonezawa1, Kazuya Dobashi1, Shigeyuki Iwai1, tatsuya Ichinose2, Takashi Sakaguchi2 (1.TokyoElectron, 2.IAS Inc.)
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3:15 PM - 3:30 PM
〇Masaaki Hirakawa1, Hideaki Hirabayashi2, Yuji Nagashima3 (1.Toshiba, 2.Toshiba Materials, 3.Shibaura Mechatronics)
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3:30 PM - 3:45 PM
〇Yoshiyuki Seike1, Hayato Watanabe1, Syogo Miyagawa1, Tatsuo Mori1, Taishi Segawa2, Yoshinori Kobayashi2, Keiji Miyachi2, Masahiko Amari2 (1.Aichi Inst. Tech., 2.Asahi Sunac)
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