Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18p-B301-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sun. Mar 18, 2018 1:00 PM - 3:45 PM B301 (53-301)

Koichiro Saga(Sony), Takashi Hasunuma(Univ. of Tsukuba)

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1:00 PM - 1:15 PM

[18p-B301-1] Characterization of Near-Interface Oxide Traps with the Charge Pumping Method

〇Toshiaki Tsuchiya¹, Masahiro Hori¹, Yukinori Ono¹ (1.Shizuoka Univ.)

1:15 PM - 1:30 PM

[18p-B301-2] Vacuum Ultraviolet Photoelectron Spectroscopy Study of SiO₂/Si Structure

〇Takuya Imagawa¹, Akio Ohta¹, Noriyuki Taoka², Nobuyuki Fujimura¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi MIyazaki¹ (1.Nagoya Univ, 2.AIST GaN-OIL)

1:30 PM - 1:45 PM

[18p-B301-3] Evaluation of charge-up on surface of SiO₂ deposited by plasma CVD with XPS to investigate self-compensation mechanism of charge-up on dielectric surfaces

〇(B)Kota Ushimaru^1,2, Takahiro Harie^1,2, Daisuke Kobayashi², Tomoyuki Yamamoto¹, Kazuyuki Hirose^1,2 (1.Waseda univ., 2.ISAS/JAXA)

1:45 PM - 2:00 PM

[18p-B301-4] Observation of Si valence electron scattering by inelastic angle-resolved photoelectron spectroscopy

〇Sakura-Nishino Takeda¹, Kazuho Morita¹, Hiroshi Daimon¹ (1.NAIST)

2:15 PM - 2:30 PM

[18p-B301-5] Evaluation of trace metal contamination in SiO₂ by Pulse Photoconductivity Method

〇(M1)Shotaro Kuzukawa¹, Takahiro Ono¹, Tatsuro Kawano¹, Hiroki Matsuyama¹, Kazuhiro Kobayashi¹, Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka², Moriya Miyashita³, Takahiro Maeta³ (1.GSST Kumamoto Univ., 2.Faculty of Technology Kumamoto Univ., 3.GlobalWafers Japan)

2:30 PM - 2:45 PM

[18p-B301-6] Non-Destructive Surface States Density Measurement by Pulse Photoconductivity Method

〇Takahiro Ono¹, Tatsuro Kawano¹, Shotaro Kuzukawa¹, Hiroki Matsuyama¹, Yamato Murakami², Takuya Yamamoto², Kaito Kashiwagi², Kazuhiro Kobayashi², Masao Yoshioka², Tsuyoshi Hashishin², Hiroshi Kubota² (1.GSST Kumamoto Univ, 2.Kumamoto Univ)

2:45 PM - 3:00 PM

[18p-B301-7] Influence of VPT-Induced Trace Particles on Sensitivity in TXRF Measurements (2)

〇Rikiichi Ohno¹ (1.Sony Semiconductor Solutions)

3:00 PM - 3:15 PM

[18p-B301-8] Development of trace metal analysis on a silicon wafer surface

〇Syuhei Yonezawa¹, Kazuya Dobashi¹, Shigeyuki Iwai¹, tatsuya Ichinose², Takashi Sakaguchi² (1.TokyoElectron, 2.IAS Inc.)

3:15 PM - 3:30 PM

[18p-B301-9] Development of Alkaline Solution generated by Electrolysis of Organic Ammonium Salt for Wet and Cleaning Process in Semiconductor Manufacturing

〇Masaaki Hirakawa¹, Hideaki Hirabayashi², Yuji Nagashima³ (1.Toshiba, 2.Toshiba Materials, 3.Shibaura Mechatronics)

3:30 PM - 3:45 PM

[18p-B301-10] Electrostatic Discharge Prevention in the Ultra-Pure Water Spray Cleaning of Semiconductor Chips using Induction Charging.
(2^nd Report; Consideration with Position and Shape of an Inductive charge device)

〇Yoshiyuki Seike¹, Hayato Watanabe¹, Syogo Miyagawa¹, Tatsuo Mori¹, Taishi Segawa², Yoshinori Kobayashi², Keiji Miyachi², Masahiko Amari² (1.Aichi Inst. Tech., 2.Asahi Sunac)

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