Oral presentation

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[20a-C204-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Tue. Mar 20, 2018 9:00 AM - 12:15 PM C204 (52-204)

Masanori Shinohara(Natl. Inst. of Tech.,Sasebo Col.)

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9:00 AM - 9:15 AM

[20a-C204-1] Reduction of tarnished silver by Ar/H₂ plasma and in-situ optical emission spectroscopy

〇(M1)Masaaki Tsukamoto¹, Kei Hosomi¹, Katsumi Takahiro¹, Fumitaka Nishiyama², Shin Yokoyama² (1.Kyoto Inst. Technol., 2.Hiroshima Univ.)

9:15 AM - 9:30 AM

[20a-C204-2] Nitriding treatment by Active Screen Plasma and its evaluation

〇(P)Susumu Ichimura¹, Seigo Takashima¹, Ippei Tsuru², Daichi Ohkubo², Hideaki Matsuo², Mineo Goto² (1.PLACIA, 2.NAKANIHON-RO KOGYO)

9:30 AM - 9:45 AM

[20a-C204-3] Formation of C-Axis-Oriented Aluminum Nitride Thin Films with Plasma Enhanced Reactive Pulsed DC Magnetron Sputtering

〇Kosuke Takenaka¹, Tomoki Yoshitani¹, Giichiro Uchida¹, Yuichi Setsuhara¹ (1.Osaka Univ.)

9:45 AM - 10:00 AM

[20a-C204-4] Simulation of Non-Equilibrium Atmospheric Pressure Hydrocarbon Plasmas for Carbon Materials Fabrication

〇(M2)Kazuma Ohki¹, Akinori Oda¹, Takayuki Ohta², Hiroyuki Kousaka³ (1.Chiba Inst. Technol., 2.Meijo Univ., 3.Gifu Univ.)

10:00 AM - 10:15 AM

[20a-C204-5] The formation of super water-repellent tree-formed a-C:F by the electronic excitation of the c-C₄F₈ condensation gas

〇(B)Toshihiro Mitani¹, Yoshinobu Uegaki², Tetsuya Sato¹ (1.Univ. Yamanashi, 2.Yamanashi Indust. Tech. Center)

10:15 AM - 10:30 AM

[20a-C204-6] High-rate synthesis of fluorocarbon film using a concentrated CF₄ gas by sub-atmospheric pressure plasma and evaluation of the film property

〇Tomoyuki Tanaka¹, Kikura Jou¹, Takemoto Hiroki¹, Kakiuchi Hiroaki¹, Yasutake Kiyoshi¹, Ohmi Hiromasa¹ (1.Osaka Univ)

10:45 AM - 11:00 AM

△ [20a-C204-7] The effect of intermittent hydrogen plasma treatment on bonding structure of amorphous carbon film grown by radical injection-PECVD

〇(DC)Hirotsugu Sugiura¹, Hiroki Kondo¹, Kenji Ishikawa¹, Takayoshi Tsutsumi¹, Keigo Takeda², Makoto Sekine¹, Masaru Hori³ (1.Nagoya Univ. Eng., 2.Meijo Univ., 3.Nagoya Univ. Inst. of Innovation for Future Society)

11:00 AM - 11:15 AM

△ [20a-C204-8] Removal of DLC Films by Using Plasma Generated by Two Power Supplies

〇Yuki Kondo¹, Tsuyoshi Tanimoto¹, Toru Harigai¹, Fuminori Yoda¹, Satoshi Degai¹, Yoshiyuki Suda¹, Hirofumi Takikawa¹, Hidenobu Gonda², Yasuhiro Hadano³, Masao Kamiya⁴ (1.Toyohashi Univ. Technol., 2.OSG Coat. Service Co., Ltd., 3.Kojima Ind. Corp., 4.Itoh Opt. Ind. Co., Ltd.)

11:15 AM - 11:30 AM

△ [20a-C204-9] Photoluminescence of (ZnO)_0.73(InN)_0.27fabricated by sputter epitaxy

〇Nanoka Miyahara¹, Kazuya Iwasaki¹, Liu Shi¹, Daisuke Yamashita¹, Daisuke Nakamura¹, Hyunwoong Seo¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki¹ (1.Kyushu Univ.)

11:30 AM - 11:45 AM

△ [20a-C204-10] Study on the low temperature and highly efficient deposition process of Silicon Oxide Gate Dielectric layers Using Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition

〇Yuichiro Kimoto¹, Koji Terawaki¹, Hiroshi Yamasaki¹, Takeshi Maekawa¹, Hiromasa Ohmi¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹ (1.Osaka Univ.)

11:45 AM - 12:00 PM

△ [20a-C204-11] Dependence of Microwave Hydrogen Plasma Treatement on S/Mo Ratio of MoS₂ Film Grown by Chemical Vapor Deposition

〇Masahiro Sugiyama¹, Yuta Nabuchi¹, Akihisa Ogino¹ (1.Shizuoka Univ.)

12:00 PM - 12:15 PM

△ [20a-C204-12] Formation of ZnO nano particles by laser-assisted sputtering

〇Wataru Wakaki¹, Akio Sanpei¹, Noriyuki Hasuike¹, Susumu Kamoi² (1.Kyoto Inst. Tech., 2.Kyoto Res. Park)

Session information

[20a-C204-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[20a-C204-1] Reduction of tarnished silver by Ar/H₂ plasma and in-situ optical emission spectroscopy

[20a-C204-2] Nitriding treatment by Active Screen Plasma and its evaluation

[20a-C204-3] Formation of C-Axis-Oriented Aluminum Nitride Thin Films with Plasma Enhanced Reactive Pulsed DC Magnetron Sputtering

[20a-C204-4] Simulation of Non-Equilibrium Atmospheric Pressure Hydrocarbon Plasmas for Carbon Materials Fabrication

[20a-C204-5] The formation of super water-repellent tree-formed a-C:F by the electronic excitation of the c-C₄F₈ condensation gas

[20a-C204-6] High-rate synthesis of fluorocarbon film using a concentrated CF₄ gas by sub-atmospheric pressure plasma and evaluation of the film property

△ [20a-C204-7] The effect of intermittent hydrogen plasma treatment on bonding structure of amorphous carbon film grown by radical injection-PECVD

△ [20a-C204-8] Removal of DLC Films by Using Plasma Generated by Two Power Supplies

△ [20a-C204-9] Photoluminescence of (ZnO)_0.73(InN)_0.27fabricated by sputter epitaxy

△ [20a-C204-10] Study on the low temperature and highly efficient deposition process of Silicon Oxide Gate Dielectric layers Using Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition

△ [20a-C204-11] Dependence of Microwave Hydrogen Plasma Treatement on S/Mo Ratio of MoS₂ Film Grown by Chemical Vapor Deposition

△ [20a-C204-12] Formation of ZnO nano particles by laser-assisted sputtering

Authentication

Session information

[20a-C204-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[20a-C204-1] Reduction of tarnished silver by Ar/H2 plasma and in-situ optical emission spectroscopy

[20a-C204-2] Nitriding treatment by Active Screen Plasma and its evaluation

[20a-C204-3] Formation of C-Axis-Oriented Aluminum Nitride Thin Films with Plasma Enhanced Reactive Pulsed DC Magnetron Sputtering

[20a-C204-4] Simulation of Non-Equilibrium Atmospheric Pressure Hydrocarbon Plasmas for Carbon Materials Fabrication

[20a-C204-5] The formation of super water-repellent tree-formed a-C:F by the electronic excitation of the c-C4F8 condensation gas

[20a-C204-6] High-rate synthesis of fluorocarbon film using a concentrated CF4 gas by sub-atmospheric pressure plasma and evaluation of the film property

△ [20a-C204-7] The effect of intermittent hydrogen plasma treatment on bonding structure of amorphous carbon film grown by radical injection-PECVD

△ [20a-C204-8] Removal of DLC Films by Using Plasma Generated by Two Power Supplies

△ [20a-C204-9] Photoluminescence of (ZnO)0.73(InN)0.27 fabricated by sputter epitaxy

△ [20a-C204-10] Study on the low temperature and highly efficient deposition process of Silicon Oxide Gate Dielectric layers Using Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition

△ [20a-C204-11] Dependence of Microwave Hydrogen Plasma Treatement on S/Mo Ratio of MoS2 Film Grown by Chemical Vapor Deposition

△ [20a-C204-12] Formation of ZnO nano particles by laser-assisted sputtering

Authentication

[20a-C204-1] Reduction of tarnished silver by Ar/H₂ plasma and in-situ optical emission spectroscopy

[20a-C204-5] The formation of super water-repellent tree-formed a-C:F by the electronic excitation of the c-C₄F₈ condensation gas

[20a-C204-6] High-rate synthesis of fluorocarbon film using a concentrated CF₄ gas by sub-atmospheric pressure plasma and evaluation of the film property

△ [20a-C204-9] Photoluminescence of (ZnO)_0.73(InN)_0.27fabricated by sputter epitaxy

△ [20a-C204-11] Dependence of Microwave Hydrogen Plasma Treatement on S/Mo Ratio of MoS₂ Film Grown by Chemical Vapor Deposition