Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[11p-S011-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 11, 2019 1:45 PM - 6:45 PM S011 (South Lecture Bldg.)

Kohei Sasaki(ノベルクリスタルテクノロジー), Hiroyuki Nishinaka(Kyoto Inst. of Tech.), Takumi Ikenoue(Kyoto Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

△ [11p-S011-1] Comparison between GaCl-O₂-N₂ and GaCl₃-O₂-N₂ systems in ε-Ga₂O₃Vapor Phase Epitaxy

〇Mayuko Sato¹, Nao Takekawa¹, Hisashi Murakami¹, Yoshinao Kumagai¹ (1.Tokyo University of Agriculture and Technology)

2:00 PM - 2:15 PM

[11p-S011-2] Phase Control in the Metastable Gallium Oxide Growth on c-plane Sapphire Substrates by Tri-halide Vapor Phase Epitaxy

〇Nao Takekawa¹, Mayuko Sato¹, Hisashi Murakami¹, Yoshinao Kumagai¹ (1.Tokyo Univ. of Agriculture and Technology)

2:15 PM - 2:30 PM

△ [11p-S011-3] Van der Waals epitaxy of flexible ε-Ga₂O₃ thin films by mist chemical vapor deposition

〇(M1)Yuta Arata¹, Daisuke Tahara¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. of Tech.)

2:30 PM - 2:45 PM

△ [11p-S011-4] Suppression of interface conduction in β-Ga₂O₃ using semi-insulating intermediate layer

〇Takumi Saito¹, Ryo Wakabayashi¹, Jungsoo Lee¹, Kaisei Kamei¹, Kohei Yoshimatsu¹, Motohisa Kado², Akira Ohtomo^1,3 (1.Tokyo Tech., 2.Toyota Motor Corp., 3.MCES)

2:45 PM - 3:00 PM

△ [11p-S011-5] Investigation on solid-phase epitaxy process of β-Ga₂O₃ by pulsed excimer laser annealing at room temperature

〇(M1)Hiroyuki Morita¹, Tomoaki Oga¹, Nobuo Tsuchimine², Satoru Kaneko^3,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech. Materials, 2.TOSHIMA Manu., 3.KISTEC)

3:00 PM - 3:15 PM

△ [11p-S011-6] PLD growth of N-doped Ga₂O₃ films and their electrical properties

〇Jungsoo Lee¹, Ryo Wakabayashi¹, Takumi Saito¹, Kohei Yoshimatsu¹, Motohisa Kado², Akira Ohtomo^1,3 (1.Tokyo Tech., 2.Toyota Motor Corp., 3.MCES)

3:30 PM - 3:45 PM

△ [11p-S011-7] Observation of Electroreflectance Spectra in β-Ga₂O₃ Crystal

〇Kouya Tanaka¹, Kohei Sasaki², Tomohiro Yamaguchi¹, Tohru Honda¹, Akito Kuramata², Shigenobu Yamakoshi³, Higashiwaki Masataka⁴, Takeyoshi Onuma^1,4 (1.Kogakuin Univ., 2.Novel Crystal Technology Inc., 3.Tamura Corp., 4.NICT)

3:45 PM - 4:00 PM

△ [11p-S011-8] Hydrogen doping and carrier transport properties of amorphous Ga-O

〇Yurika Kasai¹, Keisuke Ide¹, Takayoshi Katase¹, Hidenori Hiramatsu^1,2, Hideo Hosono^1,2, Toshio Kamiya^1,2 (1.MSL, Tokyo Tech., 2.MCES, Tokyo Tech.)

4:00 PM - 4:15 PM

△ [11p-S011-9] Low-temperature fabrication of direct-current driven electroluminescent device using amorphous oxide semiconductor thin-film phosphor, a-GaO_x

〇(D)Naoto Watanabe¹, Keisuke Ide¹, Takayoshi Katase^1,2, Masato Sasase³, Yoshitake Toda³, Junghwan Kim³, Shigenori Ueda^4,5, Koji Horiba⁶, Hiroshi Kumigashira⁶, Hidenori Hiramatsu^1,3, Hideo Hosono^1,3, Toshio Kamiya^1,3 (1.Titech Lab. for Mater. and Str., 2.PRESTO, 3.TIES, 4.NIMS, 5.SPring-8, 6.KEK)

4:15 PM - 4:30 PM

△ [11p-S011-10] Epitaxial growth of α-(In_xAl_1-x)₂O₃ alloy films by mist chemical vapor deposition

〇(D)Daisuke Tahara¹, Hiroyuki Nishinaka¹, Yuta Arata¹, Masahiro Yoshimoto¹ (1.Kyoto Inst. Tech.)

4:30 PM - 4:45 PM

△ [11p-S011-11] Quantum confinement effect in rocksalt-structured MgZnO/MgO quantum wells

〇Kanta Kudo¹, Ishii Kyouhei², Ono Mizuki¹, Fujiwara Yuki¹, Kaneko Kentaro², Yamaguchi Tomohiro¹, Honda Toru¹, Fujita Shizuo², Onuma Takeyoshi¹ (1.Kogakuin Univ, 2.Kyoto Univ)

4:45 PM - 5:00 PM

△ [11p-S011-12] Controlling MgZnO absorption edge toward deep-UV transparent electrode application

〇Tadayoshi Sakai¹, Maki Kushimoto¹, Manato Deki², Yoshio Honda^2,3, Hiroshi Amano^2,4,5 (1.Nagoya Univ., 2.IMaSS, 3.IAR, 4.Akasaki RC, 5.VBL)

5:15 PM - 5:30 PM

△ [11p-S011-13] Thinning process of hydrothermal ZnO wafers and its application to microcavities

〇Kohei Shima¹, Kazunobu Kojima¹, Shigefusa Chichibu¹ (1.IMRAM Tohoku Univ.)

5:30 PM - 5:45 PM

△ [11p-S011-14] Influence of atomic-scale patterned polymer substrate on thin film growth and property of oxide semiconductor

〇(M1)Tomoaki Oga¹, Ken Iwasa¹, Shiori Yamada¹, Satoru Kaneko^2,1, Akifumi Matsuda¹, Mamoru Yoshimoto¹ (1.Tokyo Tech. Materials, 2.KISTEC)

5:45 PM - 6:00 PM

△ [11p-S011-15] Light-Emission Property of Stacked WZO/VZO Phosphor Films

〇Ryo Okamoto¹, Atsushi Kimura¹, Takeru Okada¹, Tomoyuki Kawashima¹, Katsuyoshi Washio¹ (1.Grad.Sch.Eng.Tohoku Univ.)

6:00 PM - 6:15 PM

△ [11p-S011-16] Fast operation of a WO₃-based solid-state electrochromic transistor

〇Takaki Onozato¹, Yukio Nezu¹, Hai Jun Cho^1,2, Hiromichi Ohta^1,2 (1.IST-Hokkido Univ., 2.RIES-Hokkaido Univ.)

6:15 PM - 6:30 PM

△ [11p-S011-17] Study on Antibacterial Effect of CuCrO₂ Thin Film

〇(M1)Kohtaroh Ohno¹, Takeru Okada¹, Tomoyuki Kawashima¹, Makoto Kanzaki¹, Katsuyoshi Washio¹ (1.Tohoku Univ.)

6:30 PM - 6:45 PM

△ [11p-S011-18] Evaluation of Mobile Charge in InGaZnO-TFT by C-V Method

〇(M1)Takanori Takahashi¹, Ryoko Miyanaga¹, Mami N. Fujii¹, Jun Tanaka², Kazushige Takechi², Hiroshi Tanabe², Juan Paolo Bermundo¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.NAIST, 2.Tianma Japan)

Session information

[11p-S011-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [11p-S011-1] Comparison between GaCl-O₂-N₂ and GaCl₃-O₂-N₂ systems in ε-Ga₂O₃Vapor Phase Epitaxy

[11p-S011-2] Phase Control in the Metastable Gallium Oxide Growth on c-plane Sapphire Substrates by Tri-halide Vapor Phase Epitaxy

△ [11p-S011-3] Van der Waals epitaxy of flexible ε-Ga₂O₃ thin films by mist chemical vapor deposition

△ [11p-S011-4] Suppression of interface conduction in β-Ga₂O₃ using semi-insulating intermediate layer

△ [11p-S011-5] Investigation on solid-phase epitaxy process of β-Ga₂O₃ by pulsed excimer laser annealing at room temperature

△ [11p-S011-6] PLD growth of N-doped Ga₂O₃ films and their electrical properties

△ [11p-S011-7] Observation of Electroreflectance Spectra in β-Ga₂O₃ Crystal

△ [11p-S011-8] Hydrogen doping and carrier transport properties of amorphous Ga-O

△ [11p-S011-9] Low-temperature fabrication of direct-current driven electroluminescent device using amorphous oxide semiconductor thin-film phosphor, a-GaO_x

△ [11p-S011-10] Epitaxial growth of α-(In_xAl_1-x)₂O₃ alloy films by mist chemical vapor deposition

△ [11p-S011-11] Quantum confinement effect in rocksalt-structured MgZnO/MgO quantum wells

△ [11p-S011-12] Controlling MgZnO absorption edge toward deep-UV transparent electrode application

△ [11p-S011-13] Thinning process of hydrothermal ZnO wafers and its application to microcavities

△ [11p-S011-14] Influence of atomic-scale patterned polymer substrate on thin film growth and property of oxide semiconductor

△ [11p-S011-15] Light-Emission Property of Stacked WZO/VZO Phosphor Films

△ [11p-S011-16] Fast operation of a WO₃-based solid-state electrochromic transistor

△ [11p-S011-17] Study on Antibacterial Effect of CuCrO₂ Thin Film

△ [11p-S011-18] Evaluation of Mobile Charge in InGaZnO-TFT by C-V Method

Authentication

Session information

[11p-S011-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [11p-S011-1] Comparison between GaCl-O2-N2 and GaCl3-O2-N2 systems in ε-Ga2O3 Vapor Phase Epitaxy

[11p-S011-2] Phase Control in the Metastable Gallium Oxide Growth on c-plane Sapphire Substrates by Tri-halide Vapor Phase Epitaxy

△ [11p-S011-3] Van der Waals epitaxy of flexible ε-Ga2O3 thin films by mist chemical vapor deposition

△ [11p-S011-4] Suppression of interface conduction in β-Ga2O3 using semi-insulating intermediate layer

△ [11p-S011-5] Investigation on solid-phase epitaxy process of β-Ga2O3 by pulsed excimer laser annealing at room temperature

△ [11p-S011-6] PLD growth of N-doped Ga2O3 films and their electrical properties

△ [11p-S011-7] Observation of Electroreflectance Spectra in β-Ga2O3 Crystal

△ [11p-S011-8] Hydrogen doping and carrier transport properties of amorphous Ga-O

△ [11p-S011-9] Low-temperature fabrication of direct-current driven electroluminescent device using amorphous oxide semiconductor thin-film phosphor, a-GaOx

△ [11p-S011-10] Epitaxial growth of α-(InxAl1-x)2O3 alloy films by mist chemical vapor deposition

△ [11p-S011-11] Quantum confinement effect in rocksalt-structured MgZnO/MgO quantum wells

△ [11p-S011-12] Controlling MgZnO absorption edge toward deep-UV transparent electrode application

△ [11p-S011-13] Thinning process of hydrothermal ZnO wafers and its application to microcavities

△ [11p-S011-14] Influence of atomic-scale patterned polymer substrate on thin film growth and property of oxide semiconductor

△ [11p-S011-15] Light-Emission Property of Stacked WZO/VZO Phosphor Films

△ [11p-S011-16] Fast operation of a WO3-based solid-state electrochromic transistor

△ [11p-S011-17] Study on Antibacterial Effect of CuCrO2 Thin Film

△ [11p-S011-18] Evaluation of Mobile Charge in InGaZnO-TFT by C-V Method

Authentication

△ [11p-S011-1] Comparison between GaCl-O₂-N₂ and GaCl₃-O₂-N₂ systems in ε-Ga₂O₃Vapor Phase Epitaxy

△ [11p-S011-3] Van der Waals epitaxy of flexible ε-Ga₂O₃ thin films by mist chemical vapor deposition

△ [11p-S011-4] Suppression of interface conduction in β-Ga₂O₃ using semi-insulating intermediate layer

△ [11p-S011-5] Investigation on solid-phase epitaxy process of β-Ga₂O₃ by pulsed excimer laser annealing at room temperature

△ [11p-S011-6] PLD growth of N-doped Ga₂O₃ films and their electrical properties

△ [11p-S011-7] Observation of Electroreflectance Spectra in β-Ga₂O₃ Crystal

△ [11p-S011-9] Low-temperature fabrication of direct-current driven electroluminescent device using amorphous oxide semiconductor thin-film phosphor, a-GaO_x

△ [11p-S011-10] Epitaxial growth of α-(In_xAl_1-x)₂O₃ alloy films by mist chemical vapor deposition

△ [11p-S011-16] Fast operation of a WO₃-based solid-state electrochromic transistor

△ [11p-S011-17] Study on Antibacterial Effect of CuCrO₂ Thin Film