Oral presentation

[9p-Z01-1~18] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 9, 2020 12:30 PM - 6:00 PM Z01

Fumitaro Ishikawa(Ehime Univ.), Keisuke YAMANE(Toyohashi Univ. of Tech.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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12:30 PM - 12:45 PM

[9p-Z01-1] Be-N in heavily Be-doped GaAsN

〇Takumasa Tsunoda¹, Takashi Tsukasaki¹, Naoki Shiino¹, Miki Fujita², Toshiki Makimoto¹ (1.Waseda Univ., 2.NIT, Ichinoseki College)

12:45 PM - 1:00 PM

[9p-Z01-2] Photoluminescence characteristics of heavily Be doped GaAsN

〇Takuma Fujimoto¹, Takashi Tsukasaki¹, Naoki Shiino¹, Miki Fujita², Toshiki Makimoto¹ (1.Waseda Univ., 2.NIT, Ichinoseki College)

1:00 PM - 1:15 PM

[9p-Z01-3] Influence of above-gap excitation on up-conversion luminescence of GaPN alloys

〇Hagane Sagara¹, Kengo Takamiya¹, Syuhei Yagi¹, Hiroyuki Yaguchi¹ (1.Saitama Univ.)

1:15 PM - 1:30 PM

[9p-Z01-4] Investigation on Recovery Mechanism of III-V-N Alloy by Electron Irradiation(2)

〇Ryo Futamura¹, Keisuke Yamane¹, Nagi Takayama¹, Taishi Sumita², Mitsuru Imaizumi², Akihiro Wakahara¹ (1.Toyohashi Tech., 2.JAXA)

1:45 PM - 2:00 PM

[9p-Z01-5] Fabrication of a GaNAsBi solar cell and improvement of its performance by rapid thermal annealing

〇Hiromu Kawata¹, Sho Hasegawa¹, Junta Matsumura¹, Hiroyuki Nishinaka¹, Masahiro Yoshimoto¹ (1.Kyoto Inst.Tech.)

2:00 PM - 2:15 PM

[9p-Z01-6] Bi droplet formation at the molecular beam epitaxy of GaAsBi on GaAs substrate

〇Kohei Yoshikawa¹, Kazuki Nagashima², Takeshi Yanagida², Fumitaro Ishikawa¹ (1.Ehime Univ., 2.Tokyo Univ.)

2:15 PM - 2:30 PM

[9p-Z01-7] Characteristic structural modifications of GaAs/GaAsBi heterostructured nanowiresinduced by Bi introduction

〇Masahiro Okujima¹, Syota Mori¹, Kohei Yoshikawa¹, Mitsuki Yukimune¹, Fumitaro Ishikawa¹, Robert D Richards² (1.Ehime Univ., 2.Sheffield Univ.)

2:45 PM - 3:00 PM

[9p-Z01-8] Large area of molecular beam epitaxial growth of GaAs nanowires

〇Kenta Sakaguchi¹, Tomoki Ohno¹, Rikuo Tsutsumi¹, Mitsuki Yukimune¹, Fumitaro Ishikawa¹ (1.Ehime Univ.)

3:00 PM - 3:15 PM

△ [9p-Z01-9] Selective-area growth and characterization of InAs/GaSb core-shell nanowires on Si

〇Hironori Gamo¹, Lian Chen¹, Yu Katsumi¹, Junichi Motohisa¹, Katsuhiro Tomioka¹ (1.RCIQE)

3:15 PM - 3:30 PM

[9p-Z01-10] Controllable sulfur dopant concentration in InP nanowires revealed by NanoSIMS with nanoscale spatial resolution

〇Guoqiang Zhang^1,2, Kouta Tateno^1,2, Takehiko Tawara^1,2, Hideki Gotoh¹ (1.NTT BRL, 2.NTT NPC)

3:45 PM - 4:00 PM

▲ [9p-Z01-11] AFM Study of the 2D to 3D Transition in InAs Submonolayer Structures

〇(P)Ronel Intal Roca¹, Itaru Kamiya¹ (1.Toyota Tech. Inst.)

4:00 PM - 4:15 PM

[9p-Z01-12] Impact of dislocations in InAs/GaAs quantum dot structures on their optical properties

〇Shigekazu Okumura^1,2, Kazuki Fujisawa¹, Masaomi Yamaguchi¹, Tamami Naruke¹, Kenichi Nishi¹, Keizo Takemasa¹, Mitsuru Sugawara¹, Masakazu Sugiyama² (1.QD laser, 2.RCAST Univ. of Tokyo)

4:15 PM - 4:30 PM

[9p-Z01-13] Monte Carlo simulations for structural change of InAs wetting layer surface on GaAs(001) substrate

〇Toru Akiyama¹, Kazuhiro Yonemoto¹, Fumiaki Hishiki¹, Abdul Muizz Pradipto¹, Kohji Nakamura¹, Tomonori Ito¹ (1.MIe Univ.)

4:30 PM - 4:45 PM

[9p-Z01-14] Controlling size and emission wavelength of buried InAs QDs using the growth rate of the GaAs capping layer

〇Tao Wang¹, Jin Oshima¹, Nobuhiko Ozaki¹, Naoki Ikeda², Yoshimasa Sugimoto² (1.Wakayama Univ., 2.NIMS)

5:00 PM - 5:15 PM

[9p-Z01-15] Effect of AlSb/GaSb buffer on electronic properties of GaInSb HEMT structures

〇Takuya Hayashi¹, Mizuho Hiraoka¹, Goki Ogane¹, Munemasa Kunisawa¹, Naoyuki Kishimoto¹, Issei Watanabe², Yoshimi Yamashita², Shinsuke Hara², Ryuto Machida², Akifumi Kasamatsu², Akira Endoh¹, Hiroki Fujishiro¹ (1.TUS, 2.NICT)

5:15 PM - 5:30 PM

[9p-Z01-16] Classification of RHEED patterns using principal component analysis

〇JINKWAN KWOEN¹, Yasuhiko Arakawa¹ (1.Univ.Tokyo NanoQuine)

5:30 PM - 5:45 PM

[9p-Z01-17] The Effect of Gas Sequence of Multi Quantum Well Growth to Luminescence

〇Maui Hino¹, Warakorn Yanwachirakul², Kentaroh Watanabe², Yoshiaki Nakano¹, Masakazu Sugiyama^2,1 (1.Tokyo Univ., 2.RCAST)

5:45 PM - 6:00 PM

[9p-Z01-18] Gas flow sequence optimization of InGaAs/InP structure by using machine learning

〇Ryo Nakao¹, Yuki Wakabayashi², Takuma Otsuka³, Takuya Otsuka¹, Tomonari Sato¹, Hiroki Sugiyama¹ (1.NTT Device Technology Labs., 2.NTT Basic Research Labs., 3.NTT Communication Science Labs.)

Sessions

15 Crystal Engineering » 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy