Relationship between resistivity of barrier layer and TCR in bolometer device with Ge/Si potential barrier structure

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si processing /Si based thin film / MEMS / Equipment technology

Thu. Sep 10, 2020 12:30 PM - 5:30 PM Z10

Kuniyuki Kakushima(Tokyo Tech), Tatsuya Okada(Univ. of the Ryukyus)

1:00 PM - 1:15 PM

〇(M2)Kenta Kiya¹, Akio Furukawa¹ (1.Tokyo University of Science)

Keywords:bolometer, infrared sensor