Oral presentation

[12a-D311-1~6] 9.3 Nanoelectronics

Thu. Mar 12, 2020 10:00 AM - 11:30 AM D311 (11-311)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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10:00 AM - 10:15 AM

△ [12a-D311-1] Underlayer dependence of transport characteristics of Fe nanodot array

〇Ikuma Amano¹, Takayuki Gyakushi¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Hokkaido Univ.)

10:15 AM - 10:30 AM

△ [12a-D311-2] Fabrication and characterization of double-gate single-electron devices formed by Fe nanodot array

〇Takayuki Gyakushi¹, Yuki Asai¹, Beommo Byun¹, Ikuma Amano¹, Atsushi Tsurumaki-Fukuchi¹, Masashi Arita¹, Yasuo Takahashi¹ (1.Hokkaido Univ.)

10:30 AM - 10:45 AM

[12a-D311-3] Single-electron effects observed in arrays of magnetic nanoparticles assembled by dielectrophoresis under static magnetic field

〇Tomoki Yagai¹, Makoto Moribayashi¹, Masataka Moriya¹, Hiroshi Shimada¹, Ayumi Hirano-Iwata², Fumihiko Hirose³, Yoshinao Mizugaki¹ (1.UEC Tokyo, 2.Tohoku Univ., 3.Yamagata Univ.)

10:45 AM - 11:00 AM

[12a-D311-4] Application of single-electron amoeba circuit to solving traveling salesman problem

〇Takuya Matsuoka¹, Takahide Oya¹ (1.Yokohama National Univ.)

11:00 AM - 11:15 AM

[12a-D311-5] Design of single-electron vedic mathematics circuit

〇(B)Ryo Ogawa¹, Takahide Oya¹ (1.Yokohama National Univ.)

11:15 AM - 11:30 AM

[12a-D311-6] Design of new single-electron device for turbulence simulation

〇(B)Tomohiro Sumino¹, Takahide Oya¹ (1.Yokohama National Univ.)

Oral presentation

[12p-D311-1~7] 9.3 Nanoelectronics

Thu. Mar 12, 2020 1:30 PM - 4:00 PM D311 (11-311)

Katsuhiko Nishiguchi(NTT), Yasuhisa Naitoh(AIST)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 2:15 PM

[12p-D311-1] [The 20th JSAP Outstanding Achievement Award Speech] Atomic-level Analysis and Control of Solid Surfaces and the Invention, Development and Application of the Atomic Switch

〇Masakazu Aono¹ (1.NIMS)

2:15 PM - 2:30 PM

▼ [12p-D311-2] Towards reservoir computing hardware using Ag-Ag₂S core-shell nanoparticles

〇(PC)Hadiyawarman Hadiyawarman¹, Hirofumi Tanaka¹ (1.Kyushu Inst. of Tech.)

2:30 PM - 2:45 PM

[12p-D311-3] Investigation of Lateral-type TaOx-ReRAM using Nanogap Structures

〇Yasuhisa Naitoh¹, Sumiya Touru¹, Shima Hisashi¹, Akinaga Hiroyuki¹ (1.NeRI-AIST)

3:00 PM - 3:15 PM

△ [12p-D311-4] Interdiffusion during heteroepitaxial Au growth on Pd thin films by electroless Au plating (ELGP) at room temperature

〇Meietu You¹, Ryo Toyama¹, Phan Trong Tue¹, Yutaka Majima¹ (1.Tokyo Tech)

3:15 PM - 3:30 PM

[12p-D311-5] Pt-based Nanogap Electrodes using a High-k Insulator with a Bottom-Gate Structure

〇(M1)Taisei Igakura¹, Phan Trong Tue¹, Yutaka Majima¹ (1.Tokyo Tech)

3:30 PM - 3:45 PM

▲ [12p-D311-6] Heteroepitaxial spherical (HS-) Au/Pt nanogap electrodes with top-radii below 5 nm by ELGP

〇(M1C)Ruicong Yu¹, Ryo Toyama¹, Phan Trong Tue¹, Yutaka Majima¹ (1.Tokyo Tech MSL)

3:45 PM - 4:00 PM

[12p-D311-7] Si-nanowire-FET sensor detecting high-frequency oscillation of a multilayer-graphene MEMS by means of reflectometry technique

〇Katsuhiko Nishiguchi¹, Akira Fujiwara¹ (1.NTT Basic Res. Labs.)

Poster presentation

[13a-PA4-1~3] 9.3 Nanoelectronics

Fri. Mar 13, 2020 9:30 AM - 11:30 AM PA4 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[13a-PA4-1] Design of weight function control circuit for single-electron reservoir computing

〇Masaki Ueno¹, Takahide Oya¹ (1.Yokohama National Univ.)

9:30 AM - 11:30 AM

[13a-PA4-2] Design of Single-electron Information-processing Circuit Mimicking from Behavior of Fish Shoals

〇Hideto Yamashita¹, Takahide Oya¹ (1.Yokohama National Univ.)

9:30 AM - 11:30 AM

[13a-PA4-3] Design of multi-bit full adder consisting of single-electron memory pair circuit with thermal-noise-harnessing ability

〇Risa Kaide¹, Takahide Oya¹ (1.Yokohama National Univ.)

Sessions

9 Applied Materials Science » 9.3 Nanoelectronics

[12a-D311-1~6] 9.3 Nanoelectronics

△ [12a-D311-1] Underlayer dependence of transport characteristics of Fe nanodot array

△ [12a-D311-2] Fabrication and characterization of double-gate single-electron devices formed by Fe nanodot array

[12a-D311-3] Single-electron effects observed in arrays of magnetic nanoparticles assembled by dielectrophoresis under static magnetic field

[12a-D311-4] Application of single-electron amoeba circuit to solving traveling salesman problem

[12a-D311-5] Design of single-electron vedic mathematics circuit

[12a-D311-6] Design of new single-electron device for turbulence simulation

[12p-D311-1~7] 9.3 Nanoelectronics

[12p-D311-1] [The 20th JSAP Outstanding Achievement Award Speech] Atomic-level Analysis and Control of Solid Surfaces and the Invention, Development and Application of the Atomic Switch

▼ [12p-D311-2] Towards reservoir computing hardware using Ag-Ag₂S core-shell nanoparticles

[12p-D311-3] Investigation of Lateral-type TaOx-ReRAM using Nanogap Structures

△ [12p-D311-4] Interdiffusion during heteroepitaxial Au growth on Pd thin films by electroless Au plating (ELGP) at room temperature

[12p-D311-5] Pt-based Nanogap Electrodes using a High-k Insulator with a Bottom-Gate Structure

▲ [12p-D311-6] Heteroepitaxial spherical (HS-) Au/Pt nanogap electrodes with top-radii below 5 nm by ELGP

[12p-D311-7] Si-nanowire-FET sensor detecting high-frequency oscillation of a multilayer-graphene MEMS by means of reflectometry technique

[13a-PA4-1~3] 9.3 Nanoelectronics

[13a-PA4-1] Design of weight function control circuit for single-electron reservoir computing

[13a-PA4-2] Design of Single-electron Information-processing Circuit Mimicking from Behavior of Fish Shoals

[13a-PA4-3] Design of multi-bit full adder consisting of single-electron memory pair circuit with thermal-noise-harnessing ability

Authentication

Sessions

9 Applied Materials Science » 9.3 Nanoelectronics

[12a-D311-1~6] 9.3 Nanoelectronics

△ [12a-D311-1] Underlayer dependence of transport characteristics of Fe nanodot array

△ [12a-D311-2] Fabrication and characterization of double-gate single-electron devices formed by Fe nanodot array

[12p-D311-1~7] 9.3 Nanoelectronics

▼ [12p-D311-2] Towards reservoir computing hardware using Ag-Ag2S core-shell nanoparticles

△ [12p-D311-4] Interdiffusion during heteroepitaxial Au growth on Pd thin films by electroless Au plating (ELGP) at room temperature

▲ [12p-D311-6] Heteroepitaxial spherical (HS-) Au/Pt nanogap electrodes with top-radii below 5 nm by ELGP

[13a-PA4-1~3] 9.3 Nanoelectronics

Authentication

▼ [12p-D311-2] Towards reservoir computing hardware using Ag-Ag₂S core-shell nanoparticles