〇Keisuke Hozo¹, Dong-Pyo Han¹, Ryoya Mano¹, Ryo Takahashi¹, Ryoto Fujiki¹, Ryoya Hiramatu¹, Kanato Sawai¹, Satoshi Kamiyama¹, Tetuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki², Tsuguo Fukuda³, Takashi Fujii³ (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ., 3.Fukuda X-tal Laboratory)

〇(M1)Taisei Nagai¹, Noriyuki Taoka¹, Akio Ohta¹, Mitsuhisa Ikeda¹, Katsunori Makihara¹, Seiichi Miyazaki¹ (1.Nagoya Univ.)

〇(M1)Hirotaka Iino¹, Haruka Horiguchi¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Noukou univ.)

〇(M1)Keisuke Ito¹, Hiroki Takahashi¹, Yoshitaka Iwazaki¹, Tomo Ueno¹ (1.Noukou univ.)

〇Tsung-En Lee¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

〇(D)TsungEn Lee, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. of Tokyo)

〇Atsushi Tamura¹, Seungwoo Jang², Young-Geun Park², Hanjin Lim², Koji Kita¹ (1.Dept. of Materials Engineering, The Univ. of Tokyo, 2.Semiconductor R&D Center, Samsung Electronics)

〇(B)Yoshiharu Kirihara¹, Reito Wada¹, Ryota Tsujiguchi¹, Akira Yasui², Noriyuki Miyata³, Hiroshi Nohira¹ (1.Tokyo City Univ., 2.JASRI, 3.AIST)

〇Hoshito Yamamoto¹, Yuya Tanaka^1,2, Tatsuhiro Kambayashi¹, Takeaki Yajima³, Hisao Ishii^1,2,4 (1.GSSE Chiba Univ., 2.CFS Chiba Univ., 3.FISEE Kyushu Univ., 4.MCRC Chiba Univ.)

〇Satoshi Akutsu¹, Kazuyuki Ito¹, Takuo Kikuchi¹, Nobuaki Makino¹, Yoshiyuki Kitahara¹, Tatsuya Ohguro², Yoshihiko Fuji², Mari Takahashi², Yukiko Kashiura² (1.Toshiba, 2.Toshiba Electronic Devices & Storage)

〇Takumi Katata¹, Takuma Yatsuhashi¹, Yan Wu¹, Yoshihiro Takahashi¹ (1.Nihon Univ.)

〇Yuji Yamanaka¹, Junya Takizawa¹, Motohiro Tomita¹, Takanobu Watanabe¹ (1.Waseda Univ.)