[16p-A403-1~20] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[16p-A403-2] [The 14th Silicon Technology Division Paper Award Speech] Optimum Channel Design of Extremely-Thin-Body nMOSFETs Utilizing Anisotropic Valley—Robust to Surface Roughness Scattering

〇Kei Sumita¹, Chia-Tsong Chen¹, Kasidit Toprasertpong¹, Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo)

Keywords:semiconductor, surface roughness scattering, mobility

Extremely-thin-body (ETB) channel is the most promising structure for future technology nodes. However, the mobility degradation due to surface roughness scattering is a severe challenge, and the mobility advantage of 2D/3D-semiconductors is not clear yet in the 2–3 nm thickness range. Therefore, in this study, we evaluate the mobility of various channels down to 2-nm thickness, and clarify the optimal channel materials and surface orientations for ETB channels.