[A-0-1] The Status of Vacuum Microelectronics

Robert K. PARKER、Henry F. GRAY (1.Naval Research Laboratory)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-0-2] Limited Reaction Processing: Growth of Si-Ge/Si for Heterojunction Bipolar Transistor Applications

Jim GIBBONS、Judy HOYT、Cliff KING、Dave NOBLE、Chris GRONET、Martin SCOTT、Steve LADERMAN、Jeff ROSNER、Kris NAUKA、John TURNER、Ted KAMINS (1.Stanford Electronics Labs、2.Hewlett-Packard Co.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-0-3] Recent Progress on OEICs

R. F. Leheny (1.Bell Communications Research, Inc.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-1] Thermally Stable TiSi2 Thin Films by Modification in Interface and Surface Structures

A. Ohsaki、J. Komori、T. Katayama、M. Shimizu、T. Okamoto、H. Kotani、S. Nagao (1.LSI Research and Development Laboratory Mitsubishi Electric Corporation)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-2] Effect of W Film Stress on W-Gate MOS Characteristics

Hideaki MATSUHASHI、Satosi NISHIKAWA、Seigo OHNO (1.Semiconductor Technology Laboratory, OKI Electric Industry Co., Ltd.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-3] Reduction of Internal Stress by Compositional Gradient Layer Inserted between TiSi2 and Si

Tomonobu HATA、Masanobu Tsuchitani、Kenji Kamiya、Susumu Horita (1.Faculty of Technology, Kanazawa University)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-1-4] Thermal Stability Studies on Copper Thin Films Formed by a Low-Kinetic-Energy Particle Process

Tatsuyiki Saito、Tadahiro Ohmi、Tadashi Shibata、Masahito Otsuki、Takahisa Nitta (1.Department of Electronics, Faculty of Engineering Tohoku University、2.Device Development Center, Hitachi Ltd.)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-1] Epitaxial Growth of Al(100) on Si(100) by Gas-Temperature-Controlled Chemical Vapor Deposition

Atsushi SEKIGUCHI、Tsukasa KOBAYASHI、Naokichi HOSOKAWA、Tatsuo ASAMAKI (1.ANELVA Corporation)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-2] Electromigration Induced Abrupt Change of Electrical Resistance in Aluminum Interconnection

Shoso Shingubara、Hisashi Kaneko、Makoto Saitoh (1.Toshiba ULSI Research Center, Toshiba R&D Center、2.Tokyo Institute of Technology)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード

[A-2-3] Selective Ge CVD as a Via Hole Filling Method and Self-Aligned Impurity Diffusion Microsource in Si Processing

Min-Lin CHENG、Armin KOHLHASE、Taketoshi SATO、Shin-ichi KOBAYASHI、Junichi MUROTA、Nobuo MIKOSHIBA (1.Research Institute of Electrical Communication, Tohoku University)

1989 Conference on Solid State Devices and Materials |PDF ダウンロード