[C-3-2] Low Temperature Etching of Multi-Layer Resist by Side Wall Protection

Shingo Kadomura、Jun-ichi Satoh (1.Research and Development Div. Semiconductor Gp. SONY Corp.)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-3] Perfect Selective, Highly Anisotropic, and High Rate ECR Plasma Etching for N+ Poly-Si and Wsix/Poly-Si

Seiji Samukawa (1.VLSI Development Div. NEC Corporation)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-4] Taper Etching of Molybdenum Films Sputtered in Neon and Neon-Argon Ambients

Kinya KATO、Tsutomu WADA (1.Applied Electronics Laboratories, Nippon Telegraph and Telephone Corporation)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-5] High Rate Reactive Ion Etching of Copper Films in SiCl4, N2, Cl2 and NH3 Mixture

Kazuhide Ohno、Masaaki Sato、Yoshinobu Arita (1.NTT LSI Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-6] SOI Structures Prepared by Lateral Annealing of a-Si Films in Steep Temperature Gradient

Yasuhiro KIZU、Keiichi KONDA、Masaki TAKEUCHI、Akio KITAGAWA、Masakuni SUZUKI (1.Dept. of Electrical & Computer Engineering Faculty of Technology, Kanazawa University)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-3-7] Encapsulation of Surface Impurities by Silicon Wafer-Bonding

T. Abe、A. Uchiyama、K. Yoshizawa、Y. Nakazato、M. Miyawaki、T. Ohmi (1.Shin-Etsu Handotai、2.Nagano Denshi、3.Eng. Dept., Tohoku University)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-1] Novel Selective Platinum Deposition on VLSI Contact Hole

J. B. Yeh、C. Y. Chang、J. W. Chou、K. F. Huang、M. S. Feng (1.Institute of Electronics, National Chiao Tung University)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-2] Patterned Chemical Vapor Deposition of Tungsten Films on Silicon Dioxide

Hidekazu OKUHIRA、Shigeru NISHIMATSU、Ken NINOMIYA (1.Central Research Laboratory, Hitachi, Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-3] Reduction of Water in Inorganic SOG by Plasma Treatment

S. Ito、Y. Homma、E. Sasaki (1.Central Research Laboratory, Hitachi Ltd.、2.Hitachi VLSI Engineering Corp.)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-4-4] Substrate-Dependent Characteristics of APCVD Oxide Using TEOS and Ozone

M. Matsuura、H. Kotani、H. Abe (1.LSI Research and Development Laboratory Mitsubishi Electric Corporation)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

310件中(51 - 60)

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