[C-5-7] Strain Measurements of Si at SiO2/Si Interface by Ion Beam Channeling

Hirofumi Fukumoto (1.Department of Electrical Engineering, Hiroshima University)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-5-8] Measurement of the Surface Recombination Velocity S at the Si-SiO2 Interface by the Dual-Mercury Probe Method

Eiichi Suzuki、Hidetaka Takato、Kenichi Ishii、Yutaka Hayashi (1.Electrotechnical Laboratory)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

T. TSUCHIYA、Y. OKAZAKI、M. MIYAKE、T. KOBAYASHI (1.NTT LSI Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

W. Weber、Q. Wang、M. Brox、D. Schmitt-Landsiedel (1.Siemens AG, Corporate Research and Development)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

Bang ZHOU、Gang RUAN (1.Microelectronics Institute Fudan University)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

Hiroaki HAZAMA (1.ULSI Research Center, Toshiba Corporation)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

Udo SCHWALKE、Wilfried HANSCH、Arnulf LILL (1.SIEMENS AG, Corporate Research and Development)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

Koji KOTANI、Tadashi SHIBATA、Tadahiro OHMI (1.Department of Electronics, Tohoku University)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

Y. Tada、C. Nagata、M. Iwahashi (1.LSI Research Center, Technical Research Division, Kawasaki Steel Corp.)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

Shian Aur、Amitava Chatterjee (1.Texas Instruments, Inc.)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

310件中(71 - 80)