[S-E-18] Gate Voltage Dependence of Energy Barrier Height for Inversion Carriers in Poly-silicon TFTs

Hiroshi HAYAMA (1.Functional Devices Research Laboratories, NEC Corporation)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-E-19] Field-Induction-Drain (FID) Poly-Si TFTs with High On/Off Current Ratio

Keiji TANAKA、Kenji NAKAZAWA、Shiro SUYAMA、Kinya KATO (1.NTT Applied Electronics Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-E-20] Hydrogen Radical-Annealing of CVD-Produced Amorphous-Silicon Film

Yasutaka Uchida、Hiroshi Kanoh、Osamu Sugiura、Masakiyo Matsumura (1.Dept. of Electronics and Information Science, Nishi-Tokyo Univ.、2.Dept. of Physical Electronics, Tokyo Institute of Technology)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-E-21] Short-Channel Inverted Staggered a-Si:H Thin Film Transistors Fabricated by Electron-Beam Lithography

G. FORTUNATO、M. GENTILI、L. LUCIANI、L. MARIUCCI、G. PETROCCO、C. REITA (1.Istituto di Elettronica dello Stato Solido, CNR)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-E-22] Top-Gate Amorphous-Silicon Thin-Film Transistors Produced by CVD Method

Hiroshi Kanoh、Masahiro Yasukawa、Osamu Sugiura、Paul A. Breddels、Masakiyo Matsumura (1.Department of Physical Electronics, Tokyo Institute of Technology、2.Philips Research Lab.)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-E-23] Characteristics of a-Si TFTs Using Thermal-CVD-SiO2/PECVD-SiNx Double Layered Gate Dielectrics

KAICHI FUKUDA、NOBUKI IBARAKI (1.Electron Device Engineering Laboratory, Toshiba Corporation)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-E-24] Correlation between Density of States Distributions and the Fermi Level Position in Interfacial Regions of Amorphous Silicon Thin Film Transistors

S. C. Deane、W. I. Milne、M. J. Powell、J. R. Hughes、I. D. French (1.Cambridge University Engineering Department、2.Philips Research Laboratories)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-E-25] Mechanism of Mobility Improvement of a-Si TFT with Channel Passivated Layer

Yasuo TANAKA、Ken TSUTSUI、Toshiko KOIZUMI、Hideaki YAMAMOTO、Toshihisa TSUKADA (1.Central Research Laboratory, Hitachi, Ltd.、2.Musashino Works, Hitachi Device, Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-E-26] Degradation of Sub-Threshold Characteristics in a-Si TFT with Polyimide Passivation

Tetsu OGAWA、Hirofumi WAKEMOTO、Hiroyoshi TAKEZAWA、Sadayoshi HOTTA (1.Display Technology Research Laboratory, Matsushita Electric Industrial Co., Ltd.、2.Ishikawa-plant, Liquid Crystal Display SUM, Matsushita Electric Industrial Co., Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[S-E-27] Projection Type LC Devices for HDTV

MAMORU TAKEDA、SADAYOSHI HOTTA (1.Display Technology Research Laboratory Audio Video Research Center Matsushita Electric Industrial Co., Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

310件中(251 - 260)

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