[D-7-6] Waveguide Light-Magnetostatic Waves Interaction in a Ferrite Film in Inhomogeneous Magnetic Fields

Y. K. Fetisov、A. A. Klimov、V.L. Preobrazhensky (1.Moscow Institute of Radioengineering, Electronics and Automation)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-1] Under Field Oxide Dopant Enhancement (UFDE) for CMOS and BiCMOS Technology

Jong Ho Lee、Young June Park、Jong Duk Lee (1.Department of Electronics Engineering and Inter-university Semiconductor Research Center, Seoul National University)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-2] A Versatile 50ps BICMOS Technology for Mixed CMOS/ECL ICs

H. Klose、B. Hoffmann、M. Kerber、K. Ziemann、I. Kerner、R. Schreiter、R. Koeppl、H. Kaiser、K. Mueller (1.Siemens AG, Corporate Research and Development、2.Siemens AG, Components Group)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-3] A 3.8 ns, 800 mW 256K Bipolar SRAM

S. K. Wiedmann、D. F. Wendel、K. Ganssloser、C. T. Chuang、T. Chen、J. Warnock、M. P. Manny、R. V. Joshi (1.IBM Development Laboratory、2.IBM Research Center)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-4] Wide-Bandgap μc-Si:H/Single-Crystalline Si Abrupt Heterojunction by Si Surface Modification

K. SASAKI、Y. KUBOTA、T. MIYAJIMA、S. FURUKAWA (1.Department of Applied Electronics, Graduate School of Science & Engineering, Tokyo Institute of Technology)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-5] Selective Polysilicon Deposition (SPD) by Hot-Wall LPCVD and Its Application to High Speed Bipolar Devices

T. Aoyama、C. Ogawa、M. Sugiyama、H. Takemura、F. Toyokawa、M. Sakamoto、T. Tashiro (1.VLSI Development Division, NEC Corporation)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-6] High-Speed Heat Removal for VLSI Using AIN Heat-Spreading Layer and Microchannel Fin

Kazuo TSUBOUCHI、Satoshi UTSUGI、Tomoshi FUTATSUYA、Nobuo MIKOSHIBA (1.Research Institute of Electrical Communication, Tohoku University)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-7] SOA Improvement of p-Channel IGBT

Katsunori Ueno、Yasuyuki Hoshi、Noriyuki Iwamuro、Naoki Kumagai、Osamu Hashimoto (1.Fuji Electric Corp. Research & Development Ltd.)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-8-8] New Anode Structure for High Voltage Lateral IGBTs

Y. Yamaguchi、A. Nakagawa、N. Yasuhara、K. Watanabe、T. Ogura (1.Toshiba Research and Development Center)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

[D-9-1] A New Amorphous Silicon (a-Si) Interface Evaluation Method by Quasi-Static C-V Measurement

Hisanori IHARA、Hidetoshi NOZAKI (1.Research and Development Center, Toshiba Corporation)

1990 International Conference on Solid State Devices and Materials |PDF ダウンロード

310件中(161 - 170)

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