[A-4-3] Plasma Enhanced Liquid Source-CVD and Rapid Thermal Annealing of Tantalum Penta Oxide Dielectric Material

P. A. Murawala, M. Sawai, T. Tatsuta, O. Tsuji Sz. Fujita, Sg. Fujita (1.Research & Development Center, Samco International Incorporated, 2.Department of Electrical Engineering, Kyoto University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-4-4] Electrical Properties of MOSFETs with N2O-Nitrided LPCVD SiO2 Gate Dielectrics

J. Ahn, G. Q. Lo, D. L. Kwong (1.Microelectronics Research Center Department of Electrical and Computer Engineering The University of Texas at Austin)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-4-5] Nitride Masked Polishing (NMP) Technique for Surface Planarization of Interlayer-Dielectric Films

Yoshihiro Hayashi, Toshio Watanabe, Shuji Takahashi (1.ULSI Res. Lab., Microelectronics Res. Labs., NEC Corporation)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-5-1] Sulfur Structural and Chemical Bonding Changes for Metal/S-Passivated GaAs(111) Studied by the X-Ray Standing Wave Technique and Syhchrotron Radiation Photoemission Spectroscopy

M. Sugiyama, S. Maeyama, T. Scimeca, M. Oshima H. Oigawa, Y. Nannichi H. Hashizume (1.NTT Interdisciplinary Research Laboratories, 2.University of Tsukuba, 3.Tokyo Institute of Technology)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-5-2] In-Situ Characterization of Compound Semiconductor Surfaces by Novel Photoluminescence Surface State Spectroscopy

T. Sawada, K. Numata, S. Tohdoh, T. Saitoh, H. Hasegawa (1.Research Center for Interface Quantum Electronics and Department of Electrical Engineering Hokkaido University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-5-3] Surface Chemical Bonding of Selenium Treated GaAs(100)

T. Scimeca, Y. Watanabe, R. Berrigan, M. Oshima (1.NTT Interdisciplinary Research Laboratories)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-5-4] Oxidation of Sulfur-Treated GaAs Surfaces Studied by Photoluminescence and Photoelectron Spectroscopy

M. Oshima, T. Scimeca, Y. Watanabe, H. Oigawa, Y. Nannichi (1.NTT Interdisciplinary Research Laboratories, 2.University of Tsukuba)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-5-5] Control of GaAs Schottky Barrier Height by Ultrathin MBE Si Interface Control Layer

Ken-ichi Koyanagi, Seiya Kasai, Hideki Hasegawa (1.Department of Electrical Engineering and Research Center for Interface Quantum Electronics Hokkaido University)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-6-1] Integrated Ferroelectrics--Materials, Processes and Applications

C. A. Paz de Araujo (1.Dept. of Electrical and Computer Engineering, University of Colorado at Colorado Springs, Colorado and Symetrix Corporation)

1992 International Conference on Solid State Devices and Materials |PDF Download

[A-6-2] Submicron SrTiO3 Patterning by Reactive Ion Etching with Cl2 and SF6

Hidemitsu Aoki, Toshiki Hashimoto, Eiji Ikawa, Takamaro Kikkawa, Shintaro Yamamichi, Toshiyuki Sakuma, Yoichi Miyasaka (1.Microelectronics Research Labs, NEC Corp., 2.Fundamental Research Labs, NEC Corp.)

1992 International Conference on Solid State Devices and Materials |PDF Download