[S-II-6] New Self-Developing X-ray Resists Consisting of Polysilanes

Atsuko Yamaguchi, Taro Ogawa, Takashi Soga, Hiroaki Tachibana, Mutsuyoshi Matsumoto, Hiroaki Oizumi, Eiji Takeda (1.Central Research Laboratory, Hitachi Ltd., 2.National Institute of Materials and Chemical Research, 3.SORTEC Corp.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-II-7] Hole Generation without Annealing in High Dose Boron Implanted Silicon: Heavy Doping by B12 Icosahedron as a Double Acceptor

I. Mizushima, A. Murakoshi, M. Watanabe, M. Yoshiki, M. Hotta, M. Kashiwagi (1.ULSI Research Laboratories, Environmental Engineering Laboratory, Research and Development Center, Toshiba Corp.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-II-8] Preparation of SiOF Films with Low Dielectric Constant by ECR Plasma Chemical Vapor Deposition

Takashi Fukada, Takashi Akahori (1.Research and Development Division, Sumitomo Metal Industries, Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-II-9] Low Dielectric Constant Interlayer Using Fluorine Doped Silicon Oxide

Takashi USAMI, Kimiaki SHIMOKAWA, Masaki YOSHIMARU (1.VLSI Research and Development Center, Oki Electric Industry Co., Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-II-10] Damascene of hard and Soft Layers for Multilevel Metallization of ULSI Circuits

R. V. Joshi (1.IBM Research Division T.J. Watson Research Center)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-II-11] Single Crystal Formation of Al Interconnections on Amorphous Insulators

Kyoichi Suguro, Jun-ichi Wada, Nobuo Hayasaka, Haruo Okano (1.ULSI Research Laboratories, TOSHIBA Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-II-12] Ohmic Contact in ECRCVD-TiN/Si Structure

Yusuke Harada, Hiroshi Onoda (1.VLSI Research and Development Center, Oki Electric Industry Co., Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-II-13] Quarter-Micron Contact Filling by Ionized Beam Deposition

Hiroki ITO, Naoyuki KAJITA, Masahiro HANAI, Yoichi HASHIMOTO, Nobuo TANAKA, Hisao YOSHIDA (1.Itami Works, Manufacturing Development Lab, Mitsubishi Electric Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-II-14] Characterization of Direct-Contact Via Plug Formed by Use of Selective Al-CVD

N. Takeyasu, Y. Kawano, T. Katagiri, E. Kondoh, H. Yamamoto, T. Ohta (1.LSI Research Center, Kawasaki Steel Co., Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-II-15] Analysis of Ti Self-Passivation on Silver Interconnects for ULSIs Applications

T. Iijima, H. Ono, N. Ninomiya, Y. Ushiku, T. Hatanaka, A. Nishiyama, H. Iwai (1.ULSI Laboratories, Environmental Engineering Laboratories, Research and Development Center, Toshiba Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

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