[PD-1-12] Degradation Mechanism and Dislocation Dynamics in GaAs Light Emitters Grown on Si Substrate

Naoki WADA, Shiro SAKAI, Shinichi YOSHIMI, Yoshihiro SHINTANI, Masuo FUKUI (1.Department of Electrical and Electronic Engineering, Tokushima University, 2.On leave from Matsushita Kotobuki Electronics Industries Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-1-13] Very Long Wavelength Intersubband Infrared Hot Electron Transistor

S. D. Gunapala, J. K. Liu, T. L. Lin, J. S. Park (1.Center for Space Microelectronics Technology Jet Propulsion Laboratory, California Institute of Technology)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-2-1] A Refractory WNx/W Self-Aligned Gate GaAs Power MESFET for 1.9-GHz Digital Mobile Communication System Operating with a Single Low Voltage Supply

Masami Nagaoka, Kenji Ishida, Takashi Hashimoto, Misao Yoshimura, Yoshikazu Tanabe, Masakatsu Mihara, Yoshiaki Kitaura, Naotaka Uchitomi (1.Toshiba R&D Center)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-2-2] Transport Properties of Modulation Doped Structures Grown by Molecular Beam Epitaxy after Focused Ion Beam Implantation

Masayuki ITOH, Tadashi SAKU, Toshimasa FUJISAWA, Yoshiro HIRAYAMA, Seigo TARUCHA (1.NTT Basic Research Laboratories, 2.NTT Opto-Electronics Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-2-3] A New GaAs FET with δn-δp DIpole Barrier(DIB)

Hyun-Ryong Cho, Song-Cheol Hong, Young-Se Kwon (1.Korea Advanced Institute of Science and Technology, Dept. of Elec. Eng.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-2-4] A New n-GaAs/n+-InGaAs Doped-Channel MIS-Like FET

Wen-Chau Liu, Wei-Chou Hsu, Wen-Shiung Lour, Hir-Ming Shieh (1.Department of Electrical Engineering, National Cheng-Kung University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-2-5] AlGaAs/GaAs/InGaAs Double-Doped Quantum-Well HEMTs for Low Distortion Amplifier

Hiroyuki MASATO, Tadayoshi NAKATSUKA, Toshinobu MATSUNO, Kaoru INOUE (1.Semiconductor Research Center, Matsushita Electric Industrial Co. Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-2-6] A Novel Approach for the Fabrication of Highly Stable Be-Doped InGaAs/InP HBTs by ALE/MOVPE Hybrid Process

Yasuo MATSUMIYA, Yoshiki SAKUMA, Hisao SHIGEMATSU, Osamu UEDA, Naoki YOKOYAMA, Kazuo NAKAJIMA (1.Fujitsu Laboratories Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-2-7] Fabrication and Characterisation of Direct Schottky Contacts to Two-Dimensional Electron Gas in GaAs/AlGaAs Quantum Wells

Giorgio SCHWEEGER, Hideki HASEGAWA, Hans L. HARTNAGEL (1.Research Center for Interface Quantum Electronics, Hokkaido University, 2.Institut fur Hochfrequenztechnik)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PD-2-8] Reverse Characteristics Analysis of Defferent AlInAs-Schottky Contacts

H. Hoenow, H.-G. Bach, G. Heymann (1.Humboldt-Universitat zu Berlin, Inst. fur Werkstoffe und Verfahrenstechnik, 2.Heinrich-Hertz-Institut fur Nachrichtentechnik Berlin GmbH)

1993 International Conference on Solid State Devices and Materials |PDF Download

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