[PB-1-1] Rapid Thermal Precleaning Using Hydrogen Reduction

H. Tokuno, A. Shimizu, F. Mieno, A. Tsukune, N. Setoguchi (1.Fujitsu Limited)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-1-2] Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon

Chi Sheng, Dawei Gong, Xin Wei, Fang Lu, Qinhua Wang, Henghui Sun, Xun Wang (1.Surface Physics Laboratory, Fudan University, 2.Physics Department, Fudan University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-1-3] Study of Step Dynamics on Si(001) Surface

Kazushi Miki, Hiroshi Tokumoto, Tsunenori Sakamoto (1.Electrotechnical Laboratory, 2.National Institute for Advanced Interdisciplinary Research)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-1-4] Stability of the Si(100) Surface Epitaxially Grown by CVD

Masao SAKURABA, Junichi MUROTA, Shoichi ONO (1.Laboratory for Microelectronics Research Institute of Electrical Communication Tohoku University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-1-5] Growth and Processing of Relaxed Si1-xGex/Strained Si Structures for MOS Applications

J. Welser, J. L. Hoyt, J. F. Gibbons (1.Solid State Electronics Laboratory)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-1-6] Ultrashallow Junction Formation Using Low-Temperature Selective Si1-xGex CVD

Fumitaka Honma, Junichi Murota, Kinya Goto, Takahiro Maeda, Yasuji Sawada (1.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-1-7] Activation Energy of Si1-xGex Epitaxial Growth Rate Using Si2H6 and GeH4

Tohru Aoyama, Keiko Miyanaga, Toru Tatsumi (1.ULSI Device Development Laboratories, NEC Corporation, 2.Microelectronics Laboratories, NEC Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-1-8] Growth Criteria for Establishing Luminescence in Strained Si1-xGex/Si Quantum Wells

S. Fukatsu, H. Sunamura, Y. Kato, N. Usami, Y. Shiraki (1.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-1-9] Cyclotron Resonance in Ge Layers in Ge1-xSix-Ge Strained Heterostructures

V. V. Nikonorov, V. I. Gavrilenko, I. N. Kozlov, M. D. Moldavskaya, L. K. Orlov, O. A. Kuznetsov, A. L. Chernov (1.Institute of Applied Physics of Russian Academy of Sciences, 2.Physico-Technical Institute of Nizhny Novgorod State University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-1-10] Deep Level Transient Spectroscopic Investigations of Boron Doped Si and Si/Si1-xGex/Si Layers Grown by MBE

J. C. Brighten, I. D. Hawkins, A. R. Peaker, R. A. Kubiak, E. H. C. Parker, T. E. Whall (1.Department of Physics, University of Warwick, 2.Centre for Electronic Materials, UMIST)

1993 International Conference on Solid State Devices and Materials |PDF Download

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