[S-I-2-2] Selective Boron Atomic-Layer Doping of Silicon Using an HBO2 Source and a Thin Oxide Mask

Eiichi MURAKAMI, Hiroshi KUJIRAI, Shin'ichiro KIMURA (1.Central Research Laboratory, Hitachi, Ltd.)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-2-3] Characterization of a High Mobility, Sb Delta-Doped Structure Grown by Si-MBE

H. Radpisheh, M. R. Sardela Jr., O. Nur, M. Willander, W. X. Ni, G. V. Hansson (1.Department of Physics and Measurement Technology, Linkoping University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-2-4] Growth, Characterization and Device Fabrication of Boron Delta Doped Structures by Si-MBE

M. R. Sardela Jr., H. Radpisheh, L. Hultman, G. V. Hansson (1.Department of Physics, Linkoping University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-3-1] Si1-xGex Epitaxial Growth Using UHV-CVD and Its Device Applications

Toru Tatsumi, Ken-ichi Aketagawa, K. Miyanaga, Masayuki Hiroi (1.Microelectronics Labs. NEC Corporation, 2.ANELVA Corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-3-2] Gas-Source Molecular Beam Epitaxial Growth of Crescent-Shaped SiGe Quantum Wire Arrays on a V-Groove Patterned Si Substrate

N. Usami, T. Mine, S. Fukatsu, Y. Shiraki (1.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-3-3] Growth of SiGe Layer on Si(100) Substrate Using Disilane Gas and Thermally Evaporated Ge in Gas-Source MBE

Kinam Kim, Jeoung Ju Lee, Rajat Jhanjee, K. L. Wang (1.Device Research Laboratory, 66-147B Engineering IV, Department of Electrical Engineering, University of California)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-3-4] Parametric Investigation of Si1-xGex/Si Multiple Quantum Well Growth

Phillip E. THOMPSON, David GODBEY, Karl HOBART, Evan GLASER, Thomas KENNEDY, Mark TWIGG, David SIMONS (1.Naval Research Laboratory, 2.National Institute of Standards and Technology)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-3-5] Improvements in Si and GeSi Material Quality and 2DHG Mobilities Grown by MBE

R. A. Kubiak, E. Basaran, D. W. Smith, A. D. Plews, J. Brighten, S. M. Newstead, P. Phillips, T. E. Whall, E. H. C. Parker (1.Physics Department, University of Warwick)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-4-1] Low-Temperature Epitaxial Growth of Si/Si1-xGex/Si Heterostructure by CVD

Junichi MUROTA, Yasuji SAWADA, Shoichi ONO (1.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[S-I-4-2] Formation of Luminescent Si1-xGex/Si Quantum Wells with Abrupt Interfaces by Segregant-Assisted Growth

N. Usami, S. Fukatsu, Y. Shiraki (1.Research Center for Advanced Science and Technology (RCAST), The University of Tokyo)

1993 International Conference on Solid State Devices and Materials |PDF Download

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