[PB-1-11] High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure

Kazuo MIYATSUJI, Daisuke UEDA, Kazuo MASAKI, Shinya YAMAKAWA, Chihiro HAMAGUCHI (1.Electronics Research Laboratory, Matsushita Electronics Corporation, 2.Anan College of Technology, 3.Department of Electronic Engineering, Osaka University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-1-13] Magnetoresistance Oscillations in the Si/Si1-xGex/Si 2DHG

N. L. Mattey, T. E. Whall, A. D. Plews, R. A. Kubiak, P. J. Phillips, E. H. C. Parker, O. A. Mironov, M. J. Kearney (1.Department of Physics, University of Warwick)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-1-14] Photoluminescence from Si/Ge Superlattices

Joachim HARTUNG, Victor HIGGS, G. DAVIES, E. C. LIGHTOWLERS, Vincent ARBET-ENGELS, K. L. WANG (1.Physics Department, King's College London, 2.Electrical Engineering Department, MS:56-125B, Eng IV, University of California)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-1-15] Optical Detection of Interdiffusion in Strained Si1-xGex/Si Single Quantum Well Structures

H. Sunamura, S. Fukatsu, N. Usami, Y. Shiraki (1.Research Center For Advanced Science And Technology (RCAST), The University of Tokyo)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-1-16] Intersubband Absorption in Modulation Doped p-type Si/Si1-xGex Quantum Wells: a Systematic Study

T. Fromherz, E. Koppensteiner, M. Helm, G. Bauer, J. F. Nutzel, G. Abstreiter (1.Institut fur Halbleiterphysik, Universitat Linz, 2.Walter Schottky Institut, TU Munchen)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-1-17] MBE Growth and Electrophysical Characterization of Pseudomorphic CaF2/Si(111) Structures

J. C. Alvarez, A. F. Shulekin, N. S. Sokolov, M. I. Vexler, N. L. Yakovlev (1.Physico-Technical Institute)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-1-18] Sm2+ Photoluminescence and X-ray Scattering Studies of A-and B-Type Epitaxial CaF2 Layers on Si(111)

Nickolaj S. SOKOLOV, Takayasu HIRAI, Koji KAWASAKI Shun-ichiro OHMI, Kazuo TSUTSUI, Seijiro FURUKAWA Jinpei HARADA, Yobun ITOH, Isao TAKAHASHI (1.Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology, 2.Department of Applied Physics, Nagoya University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-1-19] Growth of 100 GHz SiGe-HBT Structures

E. Kasper, H. Kibbel, H. J. Herzog, A. Gruhle (1.Daimler-Benz Research Center)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-1-20] Vertical Si-MOSFETs with Channel Lengths Down to 45nm

H. Gossner, W. Kiunke, I. Eisele, L. Risch, K. Hofmann, R. Treichler, H. Cerva (1.Universitat der Bundeswehr Munchen, 2.Siemens AG, Research Laboratories)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PB-2-1] Fully-Selfaligned Al Gate Polysilicon TFT LCD Driver Circuits

E. Ohno, A. Yoshinouchi, T. Hosoda, M. Itoh, T. Morita, S. Tsuchimoto (1.Central Research Laboratories, SHARP corporation)

1993 International Conference on Solid State Devices and Materials |PDF Download

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