[PC-1-23] Effect of Radical Oxygen for Epitaxial Growth of Al2O3 on Si

Kiyoteru Hayama, Makoto Ishida, Tetsuro Nakamura (1.Technology Development Center, Department of Electric & Electronic Engineering, Toyohashi University of Technology)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-24] Low Temperature Nucleation of Silicon Crystal in Amorphous Phase with Synchrotron Radiation

Fumio SATO, Yoshiyuki HIRANO, Katsuyuki GOTO, Jun-ichi Chikawa (1.NHK Science and Technical Research Laboratories, 2.Himeji Institute of Technology)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-25] Medium Energy Ion Spectroscopy of Ultra-Thin As+ Implanted Layers: The Effect of Reversible Site Change of As Atoms

Zbigniew J. RADZIMSKI, Shin YOKOYAMA, Takeshi WATANABE, Kensaku ISHIBASHI, Masataka HIROSE (1.Research Center for Integrated Systems, Hiroshima University, 2.Department of Electrical Engineering, Hiroshima University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-26] Silicon Wafer Orientation Dependence of MOS Device Reliability

K. Nakamura, K. Ohmi, K. Yamamoto, K. Makihara, T. Ohmi (1.Department of Electronic Engineering, Faculty of Engineering, Tohoku University, 2.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-27] In Situ Chamber Cleaning Using Halogenated-Gas Plasmas Evaluated by Plasma-Parameter Extraction

K. Ino, I. Natori, A. Ichikawa, T. Ohmi (1.Department of Electronic Engineering, Tohoku University, 2.Laboratory for Microelectronics, Research Institute of Electrical Communication, Tohoku University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-1-28] Proposal for Equipment Standardization by Dual-Frequency-Excitation Plasma Processing

Hiroaki UETAKE, Gang Su JONG, Tadahiro OHMI (1.Department of Electronics, Faculty of Engineering, Tohoku University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-2-1] Annealing Properties of N-Doped CZ-SI Crystals

C. S. Chen, C. F. Li, F. Dai, D. R. Yang, H. N. Yao (1.Department of Physics, Wuhan University, 2.Semiconductor Materials Institute, Zhejiang University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-2-2] PN Junction Formation by Two Step Annealings in N-Doped CZ-SI Crystals

C. S. Chen, C. F. Li, L. B. Li, D. L. Que (1.Department of Physics, Wuhan University, 2.Semiconductor Materials Institute, Zhejiang University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-2-3] Two-Dimensional Growth and Decomposition of Initial Thermal SiO2 Layer on Si(100)

Tetsuhiro HORIE, Yuji TAKAKUWA, Nobuo MIYAMOTO (1.Research Institute of Electrical Communication Tohoku University)

1993 International Conference on Solid State Devices and Materials |PDF Download

[PC-2-4] Initial Stage of Oxidation of Hydrogen-Terminated Silicon Surface

Kazuaki OHISHI, Hiroshi NOHIRA, Yuichi SHIMIZU, Yoshinari TAMURA, Takeo HATTORI (1.Department of Electrical and Electronic Engineering, Musashi Institute of Technology)

1993 International Conference on Solid State Devices and Materials |PDF Download

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