[D-1-5] An Evidence for Ballistic Transport in Nanocrystalline Porous Silicon Layer by Time-of-Flight Measurements

Akira Kojima, Nobuyoshi Koshida (1.Department of Electrical and Electronic Engineering, Faculty of Technology, Tokyo University of Agriculture and Technology)

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-1-6] Highly Sensitive MISFET Sensors for Detecting CO Gas Using Porous Platinum and Tungsten Oxide Thin Films

Hisashi Fukuda, Ryuji Zohnishi, Shigeru Nomura (1.Department of Electrical and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology)

2000 International Conference on Solid State Devices and Materials |PDF Download

[LD-1-1] A Vertical, MOS-Based Silicon Tunneling Transistor

W. Hansch, J. Schulze, C. Fink, I. Eisele (1.Department of Electrical Engineering, Technical University of Munich, 2.Institute of Physics, University of the German Federal Armed Forces)

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-2-1] Quantised Currents in One Dimensional--Channels Induced by Surface Acoustic Waves

J. Cunningham, V I Talyanski, J M Shilton, M Pepper, C J B Ford, C G Smith, D A Ritchie, A Kristensen, P E Lindelof (1.Cavendish Laboratory, University of Cambridge, 2.The Niels Bohr Institute, Oersted Laboratory, 3.Toshiba Research Europe, Cambridge Research Laboratory)

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-2-2] Properties and Applications of a Novel Electroacoustic Interaction in GaAs Resonant Tunnelling Structures

A. B. Hutchinson, V. I. Talyanskii, M. Pepper, G. Gumbs, G. R. Aizin, D. A. Ritchie, E. H. Linfield (1.Cavendish Laboratory, University of Cambridge, 2.Hunter College of the City University of New York, 3.Kingsborough College of the City University of New York)

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-2-3] Single-Electron Transistors with Two Self-Aligned Gates

Katsuhiko Nishiguchi, Shunri Oda (1.Research Center for Quantum Effect Electronics, Tokyo Institute of Technology)

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-2-4] Structural and Electrical Characterization of Nanocrystalline Silicon (nc-Si) Single Electron Transistors

Y. T. Tan, T. Kamiya, Z. A. K. Durrani, H. Ahmed I. Shimizu (1.Microelectronics Research Center, Cavendish Laboratory, University of Cambridge, 2.CREST, 3.Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology)

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-2-5] SET/CMOS Hybrid for Future Low-Power LSI -Experimental Demonstration, Power Estimation, and Strategy for Its Reduction-

Ken Uchida, Junji Koga, Ryuji Ohba, Akira Toriumi (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-2-6] Novel Si Quantum Memory Structure with Self-Aligned Stacked Nanocrystalline Dots

Ryuji Ohba, Naoharu Sugiyama, Junji Koga, Ken Uchida, Akira Toriumi (1.Advanced LSI Technology Laboratory, TOSHIBA Corporation)

2000 International Conference on Solid State Devices and Materials |PDF Download

[D-2-7] Transient Characteristics of Electron Charging in Si-Quantum-Dot Floating Gate MOS Memories

A. KOHNO, H. MURAKAMI, M. IKEDA, H. NISHIYAMA, S. MIYAZAKI, M. HIROSE (1.Department of Electrical Engineering, Hiroshima University)

2000 International Conference on Solid State Devices and Materials |PDF Download