[P4-4] Cross-Hatch Related Oxidation and Reliability of Gate Oxide of Strained-Si/SiGe

Mika Nishisaka, Tanemasa Asano (1.Center for Microelectronic Systems, Kyushu Institute of Technology)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P4-5] Visible Light Irradiation Effects on Atomic-Scale Observations of Hydrogenated Amorphous Silicon Films by Scanning Tunneling Microscopy

Kenta Arima, Hiroaki Kakiuchi, Manabu Ikeda, Katsuyoshi Endo, Mizuho Morita, Yuzo Mori (1.Osaka Univ., Graduate School of Eng., Dept. of Precision Science and Technology, 2.Osaka Univ., Graduate School of Eng., Research Center for Ultra-Precision Science and Technology)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P4-6] Influence of structural variation of Ni silicide thin films on electrical property for contact materials

Kazuya Okubo, Yoshinori Tsuchiya, Osamu Nakatsuka, Akira Sakai, Shigeaki Zaima, Yukio Yasuda (1.Graduate School of Engineering, Nagoya University, 2.Center for Integrated Research in Science and Engineering, Nagoya University, 3.Center for Cooperative Research in Advanced Science and Technology, Nagoya University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P4-7] Ultra-shallow Boron Profile Fitting Compensating for Surface Contamination by Utilizing Genetic Algorithms

Masahiro Murakawa, Kentaro Shibahara, Yoshinori Oda, Tetsuya Higuchi, Kenji Nishi (1.MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 2.Research Center for Nanodevices and Systems, Hiroshima University, 3.Semiconductor Leading Edge Technologies, Inc. (Selete), 4.Kinki Univ. Tech. College)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P4-8] Nucleation-Control in Solid-Phase-Crystallization of a-Si/SiO2 by Local Ge Insertion

Isao Tsunoda, Kei Nagatomo, Atsushi Kenjo, Taizoh Sadoh, Shinya Yamaguchi, Masanobu Miyao (1.Department of Electronics, Kyushu University, 2.Central Research Laboratory, Hitachi Ltd.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P4-9] Atomic-scale Adsorbent Structure of Contaminant Metal on Si(100) Surface and its Effect on Thermal Oxidation

Takashi Onizawa, Tetsuya Narushima, Kazushi Miki, Kikuo Yamabe (1.Nanotechnology Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), 2.Institute of Applied Physics, University of Tsukuba, 3.Nanomaterials Laboratory (NML), National Institute for Materials Science (NIMS), 4.SFI Trinity Nanoscience Laboratory, Trinity College Dublin)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P4-10] Effect of Vacuum Annealing on High-k Dy2O3 Thin Films Deposited on Si(100)

S. Ohmi, H. Yamamoto, J. Taguchi, K. Tsutsui, H. Iwai (1.Tokyo Institute of Technology Interdisciplinary Graduate School of Science & Engineering, Dept. of Information Processing, 2.Frontier Collaborative Research Center)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P4-11] Formation of Strained β-FeSi2(Ge) by Ge-Segregation Controlled Solid-Phase Growth of [Amorphous Si/FeSiGe]n Multi-Layered Structure

T. Sadoh, M. Owatari, Y. Murakami, A. Kenjo, T. Yoshitake, M. Itakura, M. Miyao (1.Department of Electronics, Kyushu University, 2.Department of Applied Science for Electronics and Materials, Kyushu University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P4-12] Electrical properties of crystalline γ-Al2O3 films using conductive-AFM and MISFETs with Aluminum gates

Takayuki Okada, Ryoki Ito, Mohammad Shahjahan, Kazuaki Sawada, Makoto Ishida (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P4-13] Wet Etching Characteristics of both As-deposited and Annealed Al2O3 and HfAlOx Films

Tomoaki Nishimura, Ronald Kuse, Koji Tominaga, Toshihide Nabatame, Akira Toriumi (1.MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST), 2.MIRAI Project, Association of Super-Advanced Electronics Technology (ASET), 3.Department of Materials Science, School of Engineering, The University of Tokyo)

2003 International Conference on Solid State Devices and Materials |PDF Download