Barrier Layer) Formation on Ultra-thin Gate Oxide Reliability (HCI and NBTI) for Deep Sub-micron CMOS Transistors

Chuan H. Liu, M.G. Chen, Y. R. Yang, Y. T. Loh (1.United Microelectronics Corp.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P4-15] Characterization and Comparison of Strained Si1-yCy MOSFET Grown by Gas Source MBE and Hot Wire Cell Method

Tatsuro Watahiki, Katsuya Abe, Akira Yamada, Makoto Konagai (1.Department of Physical Electronics, Tokyo Institute of Technology, 2.Department of Electrical and Electronic Engineering, Shinshu University, 3.Research Center for Quantum Effect Electronics, Tokyo Institute of Technology)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P4-16] Effect of Nitrogen Annealing on the Electrical Properties of Ultrathin Crystalline γ-Al2O3 High-κ Dielectric Films Deposited on Si(111) Substrates

Mohammad Shahjahan, Takayuki Okada, Kazuaki Sawada, Makoto Ishida (1.Department of Electrical and Electronic Engineering, Toyohashi University of Technology)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P4-17] Electrical properties and conduction mechanism of ZrO2 films on Si1-yCy

G. K. Dalapati, S. K. Samanta, S. Chatterjee, P. K. Bose, S. Varma, Shivprasad Patil, C. K. Maiti (1.Department of Electronics & ECE, 2.Department of Mechanical Engineering, Jadavpur University, 3.Institute of Physics)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P4-18] Failure Mechanism of Nano-crystalline VN barrier in Cu/VN/SiO2/Si system

Takaomi Itoi, Osamu Yanada, Kazumi Satoh, M. B. Takeyama, Atsushi Noya (1.Kitami Institute of Technology, Dept. Electrical and Electronic Engineering., 2.Chiba University, Faculty of Engineering., 3.SEC Ltd., 4.Hitachi Kokusai Electric Inc.)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P4-19L] Near-Field Raman Microscopy of Si and Si-Based Structures Using AFM-Tip-Induced Breaking of Selection Rules

Vladimir Poborchii, Tetsuya Tada, Toshihiko Kanayama (1.MIRAI, Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P5-1] Metal-Semiconductor-Metal UV Photodetector Based on AlGaN/GaN Heterostructure

Hao Jiang, Takashi Egawa, Hiroyasu Ishikawa, Yanbo Dou, Chulin Shao, Takashi Jimbo (1.Research Center for Nano-Device and System, Nagoya Institute of Technology, 2.Department of Environmental Technology and Urban Planning, Nagoya Institute of Technology)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P5-2] Low Frequency Noise Caused by Substrate Current in AlGaAs/InGaAs HEMTs

M. Wada, S. Nishiyama, T. Nakamoto, K. Higuchi (1.Grad. Sch. of Advanced Sciences of Matter Hiroshima University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P5-3] Electro Static Discharge effects on AlGaN/GaN HEMTs on sapphire substrates

Seung-Chul Lee, Jin-Cherl Her, Kwang-Seok Seo, Min-Koo Han (1.School of Electrical Engineering (#50), Seoul National University)

2003 International Conference on Solid State Devices and Materials |PDF Download

[P5-4] Study of InGaP/InGaAs Double Doped Channel Heterostructure Field-effect Transistor (DDCHFET)

Hung-Ming Chuang, Chun-Yuan Chen, Po-Hsien Lai, Sue-I Fu, Yan-Ying Tsai, Chung-I Kao, Wen-Chau Liu (1.Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University)

2003 International Conference on Solid State Devices and Materials |PDF Download

463 results (371 - 380)

« Prev
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
Next »

▲