[C-8-1] New Strained SOI Fabricated By Laser Annealing Technology

Yasuyoshi Mishima、Hirosato Ochimizu、Atsushi Mimura (1.Silicon Technology Lab., Fujitsu Laboratories Ltd.)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-8-2] Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI

Taizoh Sadoh、Ryo Matsuura、M. Ninomiya、M. Nakamae、T. Enokida、H. Hagino、M. Miyao (1.Department of Electronics, Kyushu University、2.SUMCO、3.Fukuryo Semicon Engineering)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-8-3] Development of Simulation Method for Buried Oxide Formation of SIMOX Structure During Post-Implantation Thermal Annealing

Motoi Nakao、Koichi Sudoh、Hirofumi Iikawa、Hiroshi Iwasaki、Katsutoshi Izumi (1.Research Institute for Advanced Science and Technology, Osaka Prefecture Univ.、2.Institute of Science and Industrial Research, Osaka Univ.)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-8-4L] Double Gate SOI MOSFET-Considerations for Improved Cut-off Frequency

Abhinav Kranti、Tsung-Ming Chung、Jean-Pierre Raskin (1.Microwave Laboratory-EMIC, Universite catholique de Louvain)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-9-1] Difference between O2 and N2 Annealing Effects on CVD-SiO2 Film Quality Studied by the Time-Dependent OCP Measurement

Koji Kita、Kentaro Kyuno、Akira Toriumi (1.Department of Materials Science, School of Engineering, The University of Tokyo)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-9-2] Stable Observation of the Evolution of Leakage Spots in HfO2/SiO2 stacked structures by UHV-C-AFM

Kentaro Kyuno、Koji Kita、Akira Toriumi (1.Department of Materials Science, School of Engineering, The University of Tokyo)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-9-3] Far Infrared Study of Structural Distortion and Transformation of HfO2 by Introducing a Slight Amount of Si

Kazuyuki Tomida、Koji Kita、Kentaro Kyuno、Akira Toriumi (1.Department of Materials Science, School of Engineering, The Univ. of Tokyo)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-9-4] Evaluation of Electronic Defect States at Poly-Si/HfO2 interface by Photoelectron Yield Spectroscopy

Masashi Sugimura、Akio Ohta、Hiroshi Nakagawa、Taku Shibaguchi、Seiichiro Higashi、Seiichi Miyazaki (1.Graduate School of Advanced Sciences of Matter, Hiroshima University)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-10-1] Dielectric Constant Increase of Yttrium-Doped HfO2 by Structural Phase Modification

Koji Kita、Kentaro Kyuno、Akira Toriumi (1.Department of Materials Science, School of Engineering, The University of Tokyo)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-10-2] Generalized Model of Oxidation Mechanism at HfO2/Si Interface with Post-Deposition Annealing

Haruka Shimizu、Koji Kita、Kentaro Kyuno、Akira Toriumi (1.Department of Materials Science, School of Engineering, The University of Tokyo)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

473件中(101 - 110)

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