[B-5-3] Effect of Fluorine on Interface Characteristics in Low-temperature CMIS Process with HfO2 Metal Gate Stacks

Takaoki SASAKI、Yasushi AKASAKA、Kazuhiro MIYAGAWA、Takeshi HOSHI、Yasuhiko WATANABE、Fumio OOTSUKA、Mitsuo YASUHIRA、Tsunetoshi ARIKADO (1.Semiconductor Leading Edge Technologies Inc.)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-5-4] Behavior of Effective Work Function in Metal/High-K Gate Stack under High Temperature Process

Moon Sig Joo、Byung Jin Cho、D. Z. Chi、N. Balasubramanian、D.-L. Kwong (1.Silicon Nano Device Laboratory, Dept. of Electrical & Computer Engineering, NUS、2.Institute of Microelectronics、3.Dept. of ECE, University of Texas)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-1] Control of nitrogen profile in radical nitridation of SiO2 films.

Kazumasa Kawase、Hiroshi Umeda、Masao Inoue、Shimpei Tsujikawa、Yasuhiko Akamatsu、Akinobu Teramoto、Tadahiro Ohmi (1.Advanced Technology R&D Center, Mitsubishi Electric Corporation、2.Process Development Dept., Wafer Process Engineering Development Div., LSI Manufacturing Unit, Renesas Technology Corporation、3.Department of Electronic Engineering, Graduate School of Engineering, Tohoku Univ.、4.New Industry Creation Hatchery Center, Tohoku Univ.)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-2] Effect of Kr Gas Dilution on O Atom Density in Surface Wave Excited Kr/O2 Plasma for Low -Temperature and Damage-free Plasma Oxidation Processes

Y. Kubota、K. Yamakawa、M. Hori (1.Department of Electrical Engineering and Computer Science, Nagoya University)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-3] An Impurity-Enhanced Oxidation Assisted Doping Profile Evaluation for Three-Dimensional and Vertical-Channel Transistors

Kei Kobayashi、Takanori Eto、Kiyoshi Okuyama、Kentaro Shibahara、Hideo Sunami (1.Research Center for Nanodevices and Systems, Hiroshima University)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-6-4] Suppression of Gate Depletion in p+ Polysilicon Gated Sub-40nm PMOS Devices by Laser Thermal Process

T. Yamamoto、T. Kubo、K. Okabe、T. Sukegawa、Y. Wang、T. Lin、S. Talwar、M. Kase (1.Fujitsu Ltd.、2.Ultratech Inc.)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-1] Effects of Base Oxide and Silicon Composition on Charge Trapping in HfSiO/SiO2 High-k Gate Stacks

W.H. Wu、M.C. Chen、M.F. Wang、T.H. Hou、L.G. Yao、Y. Jin、S.C. Chen、M.S. Liang (1.Department of Electronics Engineering, National Chiao Tung University、2.Advanced Module Technology Division, Taiwan Semiconductor Manufacturing Company)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-2] Hysteresis Phenomenon Improvements of HfO2 by CF4 Plasma Treatment

Chao Sung Lai、Woei Cherng Wu、Kung Ming Fan、Jer Chyi Wang、Shian-Jyh Lin (1.Department of Electronic Engineering, Chang Gung University、2.Nanya Technology Corp., Technology Process Development Department)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-7-3] Effects of post-deposition anneal on the electrical properties in HfSiO films grown by atomic layer deposition

H. -J. Cho、H. L. Lee、H. B. Park、T. S. Jeon、S. K. Park、B. J. Jin、S. B. Kang、Y. G. Shin、U. I. Chung、J. T. Moon (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-8-1] High Performance fully silicided NiSi:Hf gate on LaAlO3/GOI n-MOSFET with Little Fermi-level Pinning

D. S. Yu、C. F. Cheng、Albert Chin、C. Zhu、M.-F. Li、Dim-Lee Kwong (1.Nano Sci. Tech. Ctr., National Chiao Tung Univ., Univ. System of Taiwan、2.Si Nano Device Lab., Dept. of Electrical & Computer Eng., National Univ. of Singapore、3.Dept. of Electrical & Computer Engineering, The Univ. of Texas)

2004 International Conference on Solid State Devices and Materials |PDF ダウンロード