[I-2-1] N-type Diamond Schottky Diodes

M. Suzuki、S. Koizumi、M. Katagiri、T. Ono、N. Sakuma、H. Yoshida、T. Sakai (1.Corporate Research & Development Center, Toshiba Corporation、2.Advanced Materials Laboratory, National Institute for Materials Science、3.Information and Media Studies, University of Tsukuba)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-2-2] Sensing Mechanism of InP Hydrogen Sensors Using Pt Schottky Diodes Formed by Electrochemical Process

Takeshi Kimura、Hideki Hasegawa、Taketomo Sato、Tamotsu Hashizume (1.Research Center for Integrated Quantum Electronics (RCIQE) and Graduate School of Information Science and Technology, Hokkaido University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-2-3] Experimental Demonstration of Ideal Noise Shaping in Resonant Tunneling Delta-Sigma Modulator for High resolution, Wide Band A/D Converters

K. Maezawa、M. Sakou、W. Matsubara、T. Mizutani、H. Matsuzaki (1.Graduate School of Engineering, Nagoya University、2.NTT Photonics Laboratories)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-2-4] Novel Differential-Mode RTD/HBT MOBILE-based D-Flip Flop IC

Yongsik Jeong、Taeho Kim、Kyounghoon Yang (1.Division of Electrical Engineering, Dept. of Electrical Engineering and Computer Science (EECS)、2.Korea Advanced Institute of Science and Technology (KAIST))

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-2-5] High-Speed Digital Circuits Using RTD as Load-Element

Hyungtae Kim、Sungjin Yeon、Sangsub Song、Sangho Park、Kwangseok Seo (1.Seoul National Univ., School Of Electrical Engineering and Computer Science)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-2-6] Low leakage gate current of InP transistors with hot electron extracted by attractive potential around i-InP/metal gate

Y. Miyamoto、R. Nakagawa、I. Kashima、M. Ishida、K. Furuya (1.Department of Physical Electronics, Tokyo Institute of Technology、2.CREST, Japan Science and Technology Agency、3.Quantum Nanoelectronics Research Center, Tokyo Institute of Technology)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-2-7L] AlGaN/GaN MIS-HEMTs Fabricated Using SiN/SiO2/SiN Triple-Layer Insulators

Akira Endoh、Yoshimi Yamashita、Nobumitsu Hirose、Kohki Hikosaka、Toshiaki Matsui、Satoshi Hiyamizu、Takashi Mimura (1.Fujitsu Laboratories Ltd.、2.National Institute of Information and Communications Technology (NICT)、3.Graduate School of Engineering Science, Osaka University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-5-1] Characterization of AlGaN/GaN HFETs on a Si Substrate Grown by MOCVD

Takashi Egawa (1.Nagoya Institute of Technology、2.Research Center for Nano-Device and System)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-5-2] Normally-off Operation of Non-polar AlGaN/GaN Heterojunction FETs Grown on R-plane Sapphire

Masayuki Kuroda、Hidetoshi Ishida、Tetsuzo Ueda、Tsuyoshi Tanaka (1.Semiconductor Device Research Center, Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[I-5-3] AlGaN/GaN HEMTs with inclined-gate-recess structure

Y. Aoi、Y. Ohno、S. Kishimoto、K. Maezawa、T. Mizutani (1.Department of Quantum Engineering, Graduate School of Engineering, Nagoya University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

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