[P3-22L] Effective Prevention of Single Event Burnout for N-Channel Power MOSFETs

Yeong-Lin Lai、Chih-Yen Huang (1.Department of Mechatronics Engineering, National Changhua University of Education、2.Department of Electronic Engineering, Feng Chia University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P3-23L] A Novel Statistical Methodology for Sub-100 nm MOSFET Fabrication Optimization and Sensitivity Analysis

Yiming Li、Ying-Shao Chou (1.Department of Communication Engineering, National Chiao Tung University、2.Microelectronics and Information Systems Research Center, National Chiao Tung University、3.Institute of Statistics, National Chiao Tung University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P4-1] The New Technology for DRAM Cell Transistor with S-RCAT and its Size Effect

Se Geun Park、Ji Young Kim、Yong Il Kim、Ho Jin Oh、Won Suk Lee、Ji Hye Kim、Sung Eui Kim、Myoung Sub Shim、Kyu Pil Lee、Yong Jik Park、Won Shik Lee、Byoung Il Ryu、Yong Han Roh (1.Samsung Electronics, Advanced Technology Team、2.CAE Team、3.SungKyunKwan Univ., School of Information & Communication Engineering)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P4-2] Improvement of Cell Stability at Low Voltage Operation on 6T-SRAM Cell with 0.1μm Channel Width

Hyuck-chai Jung、Sungsik An、Yangsoo Son、Yeongil Cho、Jeongseok Nam、Kwangok Koh、Kijoon Kim、Won-seong Lee (1.SRAM/FLASH PA Team, Memory Division Semiconductor Business)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P4-3] Abnormal Disturb Mechanism of sub 100nm NAND Flash

S.-J. Joo、H.-J. Yang、H.-S. Kim、K.-H. Noh、H.-G. Lee、W.-S. Woo、J.-Y. Lee、M.-K. Lee、W.-Y. Choi、K.-P. Hwang、S.-Y. Shim、S.-K. Kim、J.-I. Kim、W.-S. Jung、D.-I. Kim、J.-R. Ahn、J.-S. Leem、S.-J. Chung、B.-S. Park、H.-Y. Lee、Y.-W. Kim、J.-C. Om、H.-H. Chang、G.-H. Bae (1.F Device D1 Team, Flash Division, Hynix Semiconductor Inc.)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P4-4] Characteristics of Band-to-Band Hot Hole Injection for Erasing Operation in Charge Trapping Memory

Lei Sun、Liyang Pan、Huiqing Pang、Ying Zeng、Zhaojian Zhang、John Chen、Jun Zhu (1.Institute of Microelectronics, Tsinghua University、2.Semiconductor Manufacturing International Corporation)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P4-5] Thorough Diagnoses of the Impact of Flash Memory Cell UV-State Threshold Voltage on the Cell Reliability and Program/Erase Cycling Endurance Performance

Victor Chao-Wei Kuo、Hann-Ping Hwang、Cheng-Tung Huang、Cih-Wen Chou、Shyang-Ming Tzeng、Chia-Ping Lai、Tzeng- Wen Tzeng、Yih-En Huang、Wei-Zhe Wong、Ching-Sung Yang、Saysamone Pittikoun (1.TD2, Device Department, Powerchip Semiconductor Corp.)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P4-6] Effect of Compensation Implant in SONOS Flash EEPROMs

P. Bharath Kumar、Ravinder Sharma、E. Murakami、S. Kamohara、S. Mahapatra (1.Department of Electrical Engineering, Indian Institute of Technology、2.Renesas Technology Corporation)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P4-7] Non-volatile Al2O3 memory using an Al-rich structure as a charge storage layer

Shunji Nakata、Kunio Saito、Masaru Shimada (1.NTT Microsystem Integration Laboratories, NTT Corporation)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[P4-8] A new low temperature APM cleaning process to improve ONO integrity in 0.18μm stacked-gate EEPROM memory

Jing Zhao、Nam Sung Kim、Junsyong Ng、Kumfai Wong、Wenyi Zhang、M. Mukhopadhyay、Dhruva Shukla (1.Process Integration Department, Systems on Silicon Manufacturing Co. Pte. Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード