[B-9-1] Efficient Reduction of Standby Leakage Current in LSIs for Use in Mobile Devices

H. Kudo、K. Ishikawa、Y. Mishima、S. Satou、F. Kihara、M. Okamoto、T. Ito、Y. Suzuki、T. Nomura、M. Kawano、K. Nishikawa、Y. Ozaki (1.Advanced CMOS Technology Lab., Fujitsu Labs Ltd.、2.MCU Technology. Dept.、3.Preocess Integration Dept.、4.Preocess Engineering Dept.、5.Product Engineering Dept., Fujitsu Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-9-2] Reliability and Memory Characteristics of Sequential Laterally Solidified LTPS TFT with a ONO Stack Gate Dielectric

Ssu-I Hsieh、Ya-Chin King、Hung-Tse Chen、Yu-Cheng Chen、Chi-Lin Chen、Jia-Xing Lin (1.Microelectronics Lab., STAR Group, Department of Electrical Engineering National Tsing-Hua University、2.,Electronics Research and Service Organization Industrial Technology Research Institute)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-9-3] Direct measurement of the offset spacer effect on the carrier profiles in sub-50 nm p-MOSFETs

Hidenobu Fukutome、Takashi Saiki、Ryou Nakamura、Akihiro Usujima、Takayuki Aoyama (1.FUJITSU LABORATORIES LTD.、2.FUJITSU LIMITED, Advanced LSI development div.)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-9-4] Degradation of Current Drivability of Schottky Source/Drain Transistors with High-k Gate Dielectrics and Possible Measures to Suppress the Phenomenon

Mizuki Ono、Akira Nishiyama、Masato Koyama (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-10-1] Impact of Body Bias Controlling in Partially Depleted SOI Devices with Hybrid Trench Isolation Technology

Toshiaki Iwamatsu、Mikio Tsujiuchi、Yuuichi Hirano、Tatsuhiko Ikeda、Futoshi Komatsu、Takashi Ipposhi、Shigeto Maegawa、Yuzuru Ohji (1.Advanced Device Development Dept., Renesas Technology Corp.、2.Renesas Semiconductor Engineering Corp.)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-10-2] A High Gain (25%) Strained Silicon Scheme for 65nm High Performance nMOSFETs

T Y Chang、J W Pan、Y C Liu、P W Liu、B C Lan、C H Tsai、T F Chen、C H Tung、C T Huang、C T Tsai、W T Shiau (1.United Microelectronics Corporation (UMC), Central R&D Division)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[B-10-3] Advanced I/O Technology using Laterally Modulated Channel MOSFET for 65-nm Node SoC

E. Yoshida、Y. Momiyama、N. Hasegawa、M. Kojima、S. Satoh、T. Sugii (1.Fujitsu Laboratories Ltd.、2.Fujitsu Ltd.)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-1] Cu/low-k process integration for 65nm and 45nm SoC devices

N. Matsunaga (1.Advanced CMOS Technology Department, SoC R&D Center, Semiconductor Company, Toshiba Corporation)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-2] Mechanical Strength of Multilayered Dielectric Structures Measured by Laser-Pulse Generated Surface-Acoustic-Wave Technique

Toshinori Takimura、Nobuhiro Hata、Takahiro Nakayama、Yoshinori Shishida、Ryotaro Yagi、Jun Kawahara、Shinichi Chikaki、Nobutoshi Fujii、Takamaro Kikkawa (1.ASRC, AIST、2.MIRAI-ASRC, AIST、3.MIRAI-ASET、4.RCNS, Hiroshima University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード

[C-1-3] Properties of Low-k (k-2.05) Plasma Polymer Films Deposited by PECVD Using Decamethyl-cyclopentasiloxane and Cyclohexane as the Precursors

Jaeyoung Yang、Sungwoo Lee、Kyounghwan Kim、Donggeun Jung、Heeyeop Chae (1.Department of Physics, Brain Korea 21 Physics Research Division and Institute of Basic Science, Sungkyunkwan University、2.Department of Chemical Engineering, Sungkyunkwan University)

2005 International Conference on Solid State Devices and Materials |PDF ダウンロード