[G-5-4L] Electrostatic tuning of charge velocity in a quantum Hall edge channel defined along the perimeter of a gate metal

R. Murata¹, M. Hashisaka¹, K. Muraki², T. Fujisawa¹ (1.Tokyo Tech., 2.NTT Basic Res. Lab. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[H-1-1] Defects in Electron-Irradiated and Hydrogenated GaAsN Grown by Chemical Beam Epitaxy

B. Bouzazi¹, N. Kojima¹, Y. Ohshita¹, M. Yamaguchi¹ (1.Toyota Technological Inst. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[H-1-2] Enhancement of Light Harvesting and Power Conversion Efficiency in GaAs Solar Cell Using Flexible Nano-pattern PDMS Film

H. V. Han¹, H. C. Chen¹, C. C. Lin¹, H. S. Shih¹, T. Y. Tsao¹, Y. L. Yeh¹, Y. L. Tsai¹, H. C. Kuo¹, P. Yu¹ (1.National Chiao Tung Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[H-1-3] Reduction of Operating Temperature in 25 Series-Connected 820X CPV

Y. Ota¹, T. Sueto¹, H. Nagai², K. Araki², K. Nishioka¹ (1.Univ. of Miyazaki, 2.Daido steel , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[H-1-4] Novel High-sensitivity Broadband Image Sensor with CIGS Thin Films

Y. Ota¹, T. Maekawa¹, O. Matsushima¹, H. Sekiguchi¹, T. Maeda¹, T. Fujii¹, D. Ohnishi¹, H. Takasu¹, S. Niki² (1.ROHM Corp. Ltd., 2.National Inst. of Advanced Indus. Sci. and Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[H-1-5] Direct Bonding using a-Si:H Thin Films for the Fabrication of Chalcopyrite Tandem Solar Cells

S. Oonishi¹, Y. Kurokawa¹, A. Yamada¹ (1.Tokyon Inst. of Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[H-1-6] First-principles study of diffusion of constituent atom in CuInSe2

S. Nakamura¹, T. Maeda¹, T. Wada¹ (1.Ryukoku Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[H-2-1] Crystal growth mechanisms of silicon during melt growth processes

K. Fujiwara¹, H. Koizumi¹, K. Nozawa¹, S. Uda¹ (1.Tohoku Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[H-2-2] Single crystalline silicon substrate lift-off using electrodeposition process

Y. Kwon¹, S. Jin¹, S. Yoon¹, B. Yoo¹ (1.Hanyang Univ. , Sounth Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[H-2-3] Monocrystalline Si Sorlar Cells with Selective Emitter Structure Formed by Ion Shower Doping Technique

H. Hashiguchi¹, T. Tachibana¹, M. Aoki², T. Kojima², Y. Ohshita², A. Ogura¹ (1.Meiji Univ., 2.Toyota Tech. Inst. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (231 - 240)

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