GaN Metal-Oxide-Semiconductor HFETs

J. Park¹, J. H. Shin¹, H. J. Kim², K. C. Kim¹, T. Jang¹ (1.LG Electronics Corp., 2.Hanyang Univ. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-18] Interface analysis of AlN/InAs(001) and AlN/Ge/InAs(001) by angle-resolved X-ray photoelectron spectroscopy

M. Kudo¹, H. A. Shih¹, T. Suzuki¹ (1.JAIST , JAPAN)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-19] Low Frequency Noise Analysis of ZnO TFTs under the Positive Gate Bias Stress

K. S. Jeong¹, Y. M. Kim¹, H. J. Yun¹, S. D. Yang¹, S. Y. Lee¹, Y. S. Kim², H. D. Lee¹, G. W. Lee¹ (1.Univ. of Chung-nam National, 2.National Nanofab Center , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-20] Influence of in situ N2 Plasma Pretreatment on the SiN Prepassivation of AlGaN/GaN HEMT

S. G. Han¹, Y. H. Oh¹, M. Lee¹, D. Kim¹, K. Seo¹ (1.Seoul National Univ. , Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-21] Analysis on trade-off between electric field and gate-drain capacitance for GaN HEMT by T-CAD simulation

Y. Yamaguchi¹, K. Hayashi¹, T. Oishi¹, H. Otsuka¹, K. Yamanaka¹, M. Nakayama¹, Y. Miyamoto² (1.Mitsubishi Electric Corp., 2.TokyoTech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-22L] Nitrogen passivation and Chemical Trends of Defects at Al2O3:GaAs/InAs/InP/GaSb Interfaces

J. Robertson¹, Y. Guo¹, L. Lin¹ (1.Cambridge Univ. , UK)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-23L] High Breakdown Voltage and Low Thermal Effect Micromachined SOI AlGaN/GaN HEMTs

H. C. Chiu¹, C. W. Yang¹ (1.Chang Gung Univ. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-24L] Depth-resolved electronic structure analysis of IGZO/SiO2 interface by two-dimensional photoelectron spectroscopy

Y. Ueoka¹, F. Matsui¹, N. Maejima¹, H. Matsui¹, H. Yamazaki¹, S. Urakawa¹, M. Horita¹, Y. Ishikawa¹, H. Daimon¹, Y. Uraoka¹ (1.Nara Inst. of Sci. and Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-7-1] Low-Loss Polycrystalline Silicon Waveguides for High-Efficiency Optical Modulator

T. Horikawa^1,2, M. Takahashi^1,2, J. Fujikata^1,3, S. Takahashi^1,3, T. Akagawa^1,3, M. Noguchi^1,3, N. Yamamoto^1,2 (1.PECST, 2.AIST, 3.PETRA , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-7-2] Single photon generation from an impurity center with well-defined emission energy in GaAs

L. Zhang¹, M. Ikezawa¹, T. Mori¹, S. Umehara¹, Y. Sakuma², K. Sakoda², Y. Masumoto¹ (1.Univ. of Tsukuba, 2.National Inst. for Materials Science , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (511 - 520)

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