[F-6-2] 600-V 27-mΩ Normally-off SiC JFET for High Efficiency Power Supply

H. Shimizu¹, H. Okino¹, S. Akiyama¹, K. Katoh¹, N. Yokoyama¹, K. Ishikawa¹ (1.Hitachi Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-6-3] Lateral High-Voltage 4H-SiC IGBTs

W. S. Lee¹, C. Y. Cheng¹, K. W. Chu¹, C. F. Huang¹, F. Zhao², L. S. Lee³, Y. S. Chen³, C. Y. Lee³, M. J. Tsai³ (1.National Tsing Hua Univ. , Taiwan, 2.Washington State Univ. , USA, 3.Indus. Tech. Res. Inst. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-6-4] Significant Effect of JFET Doping on Low On-resistance 4H-SiC DMOSFETs of 3300 V Rating

K. Hamada¹, N. Miura^1,2, S. Hino^1,2, T. Kawakami¹, M. Imaizumi¹, H. Sumitani¹, T. Oomori^1,2 (1.Mitsubishi Electric Corp., 2.R&D Partnership for Future Power Electronics Tech. (FUPET) , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-6-5] Advanced SiC Devices with Trench Structure

T. Nakamura¹, M. Aketa¹, Y. Nakano¹ (1.New Material Devices R&D Center, ROHM Co., Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-7-1] High Quality SiO2/Al2O3 Gate Stack for GaN MOSFET

H. Kambayashi^1,2, T. Nomura¹, H. Ueda³, K. Harada⁴, Y. Morozumi⁴, K. Hasebe⁴, A. Teramoto², S. Sugawa², T. Ohmi² (1.Advanced Power Device Reserch Association, 2.Tohoku Univ., 3.Tokyo Electron Tech. Deveropment Inst. Inc., 4.Tokyo Electron Tohoku Ltd. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-7-2] Interface characterization of Al2O3/AlGaN/GaN structure with inductively coupled plasma etching of AlGaN surface

Z. Yatabe¹, Y. Hori¹, S. Kim¹, T. Hashizume^1,2 (1.Hokkaido Univ., 2.JST-CREST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-7-3] Characterization of gate-control efficiency in AlN/AlGaN/GaN metal-insulator-semiconductor structure by capacitance-frequency-temperature mapping

H. A. Shih¹, T. Q. Nguyen¹, M. Kudo¹, T. Suzuki¹ (1.JAIST , JAPAN)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-7-4] Mechanism study of gate leakage current for AlGaN/GaN HEMT structure under high reverse bias by TSB model and TCAD simulation

T. Oishi¹, K. Hayashi¹, Y. Yamaguchi¹, H. Otsuka¹, K. Yamanaka¹, M. Nakayama¹, Y. Miyamoto² (1.Mitsubishi Electric Corp., 2.Tokyo Tech. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-8-1] Fully Transparent AZO Thin-film Transistors Fabricated on Flexible Plastic Substrates at Room Temperature

W. Wang¹, D. D. Han¹, J. Cai¹, Y. F. Geng¹, L. L. Wang¹, Y. Tian¹, Y. Wang¹, S. D. Zhang¹ (1.Peking Univ. , China)

2012 International Conference on Solid State Devices and Materials |PDF Download

[F-8-2] High Performance Dual Gate Amorphous In-Ga-Zn-O Thin Film Transistor with Nanometer Dot-like Doping

H. W. Zan¹, C. H. Liao¹, C. H. Li¹, C. C. Tsai¹, W. T. Chen², C. H. Hsu² (1.National Chiao Tung Univ., 2.E Ink Holdings Inc. , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

665 results (191 - 200)

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