[PS-3-1] Current Enhancement of Green Transistors as Compare to Conventional Tunnel FETs with Dopant Segregated Process

M. H. Lee¹, J. C. Lin¹, C. Y. Kao¹, C. W. Chen², J. D. Luo¹, Y. J. Lee³, G. L. Luo³ (1.National Taiwan Normal Univ., 2.National Cheng Kung Univ., 3.National Nano Device Lab. , TAIWAN)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-2] Influence of Structural Parameters on Performance of Schottky Tunneling FET Electrical Characteristics and its Scalability

Y. Wu^1,2,3, C. Dou^1,2,3, K. Kakushima², K. Ohmori⁴, P. Ahmet¹, T. Watanabe⁵, K. Tsutsui², A. Nishiyama², N. Sugii², K. Natori¹, K. Yamada⁴, Y. Kataoka², T. Hattori¹, H. Iwai¹ (1.Tokyo Tech., 2.Tokyo Tech., 3.Univ. of Tsukuba, 4.Univ. of Tsukuba, 5.Waseda Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-3] Enhanced Subthreshold and Output Characteristics in Tunnel Field -Effect Transistors Using Shallow Junction Technologies

H. Y. Chang¹, S. Chopra², B. Adams², J. Li², S. Sharma², Y. Kim², S. Moffatt², P. Y. Chien¹, B. C. Huang¹, J. C.S. Woo¹ (1.Univ. of California, Los Angeles, 2.Applied Materials Inc , USA)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-4] Epitaxial Tunnel Layer Structure for Complementary Tunnel FETs Enhancement

P. Y. Wang¹, B. Y. Tsui¹ (1.National Chiao Tung Univ. , Taiwan, R.O.C.)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-5] EOT Scaling in Tunnel Field-Effect Transistors: Trade-off between Subthreshold Steepness and Gate Leakage

T. Mori¹, K. Fukuda¹, T. Yasuda¹, A. Tanabe¹, T. Maeda¹, S. O'uchi¹, Y. Liu¹, W. Mizubayashi¹, M. Masahara¹, H. Ota¹ (1.GNC-AIST , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-6] Compound Semiconductor Tunneling Field-Effect Transistor Based on Ge/GaAs Heterojunction with Tunneling-Boost Layer for High-Performance Operation

Y. J. Yoon¹, S. Cho³, J. H. Seo², I. M. Kang^1,2, B. G. Park⁴, J. H. Lee^1,2 (1.National Univ. Kyungpook, 2.National Univ. Kyungpook , Republic of Korea, 3.Univ. of Stanford , USA, 4.National Univ. of Seoul , Republic of Korea)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-7] Low Leakage Junctionless Vertical Pillar Transistor

Y. C. Yin¹, H. C. Chang¹, C. W. Liu^1,2 (1.National Taiwan Univ., 2.National Nano Device Labs. , Taiwan, R.O.C)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-8] High-performance Short-channel Germanium nMOSFETs without Phosphorus Diffusion in n+/p Source/Drain Junctions

C. T. Chung¹, G. L. Luo², B. Y. Chen², C. W. Chen¹, W. C. Chen¹, C. H. Chien^1,2 (1.National Chiao-Tung Univ., 2.National Nano Device Laboratories , Taiwan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-9] Subband structure and effective mass of two dimensional hole gas in strained Ge channels

Y. Hoshi^1,2, R. Moriya², K. Sawano¹, N. Usami³, T. Machida², Y. Shiraki¹ (1.ARL, Tokyo City Univ., 2.IIS, Univ. of Tokyo, 3.IMR, Tohoku Univ. , Japan)

2012 International Conference on Solid State Devices and Materials |PDF Download

[PS-3-10] Impact of Scattering on the Strained Ge Nanowire pFETs

J. Qin¹, J. Zhang¹, G. Du¹, X. Liu¹ (1.Peking Univ. , China)

2012 International Conference on Solid State Devices and Materials |PDF Download