2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (391 - 400)

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[PS-3-17] Comparative Study of Tunnel Field Effect Transistors with Dopant-Segregated Schottky Source/Drain

^○Y. B. Zhang¹, L. Sun¹, H. Xu¹, J. W. Han¹ (1.Peking Univ.(China))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-1] Si-based Nonvolatile Field Effect Transistor using Low Temperature Process

^○Y. Miyata¹, A. Ashida¹, T. Yoshimura¹, N. Fujimura¹ (1.Osaka Prefecture Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-2] Transition Metal Complex Reaction Etching for MRAM Applications using Neutral Beam and Its Mechanism Investigated by First-Principles Calculation

^○T. Kubota¹, Y. Kikuchi^1,2, T. Nozawa², S. Samukawa^1,3 (1.IFS, Tohoku Univ., 2.Tokyo Electron Ltd., 3.WPI-AIMR, Tohoku Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-3] A 16-Level-Cell Memory with 0.24mV/°C Temperature Characteristics Comprising Crystalline In-Ga-Zn Oxide FET

^○T. Matsuzaki¹, T. Onuki¹, S. Nagatsuka¹, H. Inoue¹, T. Ishizu¹, Y. Ieda¹, N. Yamade¹, H. Miyairi¹, M. Sakakura¹, Y. Shionoiri¹, K. Kato¹, T. Okuda¹, KoyamaJ. ¹, Y. Yamamoto¹, S. Yamazaki¹ (1.Semiconductor Energy Lab. Corp., Ltd.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-4] High-performance In-Ga-Zn-O TFT Memory with Pt Nanocrystals

^○S. B. Qian¹, W. P. Zhang¹, W. J. Liu¹, S. J. Ding¹ (1.Fudan Univ.(China))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-5] Resistance Switching Memory Operation of CaF₂/Si/CaF₂ Resonant-tunneling Quantum-well Structures using Nanocrystalline-Si Secondary Barrier Layers

^○K. Suda¹, Y. Kuwata¹, M. Watanabe¹ (1.Tokyo Tech(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-6] [No-show]Switching Kinetics of VCM-based Memristor: Evolution and Positioning of Nanofilament

^○J. Y. Chen¹, C. W. Huang¹, C. H. Chiu¹, Y. T. Huang¹, W. W. Wu¹ (1.National Chiao Tung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials

[PS-4-7] Impact of Film Morphology on the Switching Characteristics of Ta₂O₅-Based Atomic Switches

^○C. Mannequin¹, T. Tsuruoka¹, T. Hasegawa², M. Aono¹ (1.NIMS, 2.Waseda Univ.(Japan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-8] Guideline Model for the Bias-Scheme-Dependent Power Consumption of a ReRAM Crossbar Array

^○W. K. Sun¹, H. Lim¹, S. J. Choi¹, H. S. Shin¹ (1.Ewha Womans Univ.(Korea))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-4-9] Properties of SiC Resistive Memory for Harsh Environments

^○K. Morgan¹, J. Fan¹, R. Huang¹, L. Zhong¹, R. Gowers¹, L. Jiang¹, K. De Groot¹ (1.Univ. of Southampton(UK))

2015 International Conference on Solid State Devices and Materials |PDF Download

894 results (391 - 400)

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