2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (861 - 870)

[PS-14-6] Improved Electrical Properties of 4H-SiC MOS Devices with High Temperature Thermal Oxidation

H. Xu^1,2, Q. Yang¹, M. Zhao¹, S. Wang¹, ^○Z. Jin¹, X. Liu¹, A. Chanthaphan², Y. Cheng², T. Hosoi², T. Shimura², H. Watanabe² (1.Institute of Microelectronics, Chinese Academy of Sciences, 2.Osaka Univ.(China))

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[PS-14-7] Removal of Near-Interface Oxide Traps at SiO₂/SiC Interface by Post-Oxidation Annealing in Reducing Ambient

^○H. Kajifusa¹, H. Hirai¹, Y. Fujino¹, K. Kita¹ (1.Univ. of Tokyo(Japan))

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[PS-14-8] Charge Distribution in Termination Area of 4H-SiC Diodes Analyzed by Measuring Depletion-layer Capacitance

^○H. Matsushima¹, H. Okino¹, K. Mochizuki¹, R. Yamada¹ (1.Hitachi, Ltd. (Japan))

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[PS-14-9] Investigation of 4H-SiC IGBT Turn-off Performance for Achieving Low Power Loss

^○D. Navarro¹, I. Pesic¹, Y. Morikawa¹, Y. Furui¹, M. Miura Mattausch² (1.Silvaco Japan, 2.Hiroshima Univ.(Japan))

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[PS-14-10] Characterization of Near-Interface Oxide Trap Density in SiC MOS Capacitors by Transient Capacitance Measurements at Various Temperatures

^○Y. Fujino¹, K. Kita¹ (1.Univ. of Tokyo(Japan))

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[PS-14-11] Mapping of Si/SiC Hetero p-n Junctions Using Scanning Internal Photoemission Microscopy

^○M. Shingo¹, J. Liang², N. Shigekawa², M. Arai³, K. Shiojima¹ (1.Univ. of Fukui, 2.Osaka City Univ., 3.New Japan Radio Co., Ltd.(Japan))

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[PS-14-12] Photoemission Spectroscopy Measurements of p⁺-Si/n-SiC and n⁺-Si/n-SiC Junctions by Surface Activated Bonding

^○N. Shigekawa¹, J. Liang¹, M. Shingo², M. Arai³, K. Shiojima² (1.Osaka City Univ., 2.Univ. of Fukui, 3.New Japan Radio Co., Ltd.(Japan))

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[PS-14-13] Special Features in Stress Degradation of SiC-MOSFETs Observed in I-V Characteristics

^○E. Murakami¹, K. Oda¹, T. Takeshita¹ (1.Kyushu Sangyo Univ.(Japan))

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[PS-14-14] Heteroepitaxial Growth of Diamond on 3C-SiC/Si Substrates by Antenna-Edge Microwave Plasma CVD

^○T. Suto¹, J. Yaita^1,2, T. Iwasaki^1,2,3, M. Natal⁴, S. E. Saddow⁴, M. Hatano^1,2,3 (1.Tokyo Tech, 2.JST-CREST, 3.JST-ALCA, 4.Univ. of South Florida(Japan))

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[PS-14-15] Trench-channel MOSFET using C-H Diamond Surface

^○T. Saito¹, M. Kobayashi¹, T. Yamada¹, D. Xu¹, Y. Kitabayashi¹, D. Matsumura¹, M. Inaba¹, A. Hiraiwa¹, H. Kawarada¹ (1.Waseda Univ.(Japan))

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894 results (861 - 870)