2015 International Conference on Solid State Devices and Materials

Sep 27, 2015 - Sep 30, 2015
Sapporo Convention Center, Sapporo, Japan

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894 results (721 - 730)

[PS-6-19] Low Interface Trap Density HfO₂/Al₂O₃/InAs MOS Capacitors Prepared by Nitrogen Plasma Treatment

^○G. B. He¹, W. J. Hsueh¹, C. Y. Chen¹, J. I. Chyi^1,2 (1.National Central Univ., 2.Research Center for Applied Science, Academia Sinica(Taiwan))

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[PS-6-20] Study on Electrical Performances of ZnO-TFTs with 3-D Finlike Channels Fabricated by Nanoimprint Lithography and Atomic Layer Deposition

^○H. J. H. Chen¹, B. L. Yeh¹, C. Y. Chiang², T. N. Lee¹, K. C. Hsieh² (1.National Chi Nan Univ., 2.National Tsing Hua Univ.(Taiwan))

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[PS-6-21] Structural Properties and Electrical Characteristics of High-κ Lu₂O₃ and Lu₂TiO₅ Gate Dielectrics for InGaZnO Thin-Film Transistors

^○T. M. Pan¹, C. H. Chen¹, H. J. Wang¹, I. C. Huang¹ (1.Chang Gung Univ.(Taiwan))

2015 International Conference on Solid State Devices and Materials |PDF Download

[PS-6-22] Impact of Gate Dielectrics and Oxygen Annealing on Tin-Oxide Thin-Film Transistors

^○C. W. Zhong¹, H. C. Lin¹, J. R. Tsai², K. C. Liu³, T. Y. Huang¹ (1.National Chiao Tung Univ., 2.Asia Univ., 3.Chang Gung Univ.(Taiwan))

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[PS-6-23] Mobility Improvement Based on Mobility Model of Crystalline In-Ga-Zn-Oxide with High Indium Composition

^○K. Tsutsui¹, D. Matsubayashi¹, N. Ishihara¹, T. Takasu¹, S. Matsuda¹, S. Yamazaki¹ (1.Semiconductor Energy Lab. Co., Ltd.(Japan))

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[PS-6-24] ZnO Thin Film Transistor with U-shape Active Layer for High Performance Application

^○H. J. Yun¹, Y. M. Kim¹, S. D. Yang¹, H. D. Lee¹, G. W. Lee¹ (1.Chungnam National Univ.(Korea))

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[PS-6-25L] Design of Drain for Low off Current in GaAsSb/InGaAs Tunnel FETs

^○S. Iwata¹, W. Lin¹, K. Fukuda^1,2, Y. Miyamoto¹ (1.Tokyo Tech, 2.AIST(Japan))

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[PS-6-26L] Low-noise Performance of Pseudomorphic InGaAs/InAlAs HEMTs

^○I. Watanabe¹, A. Endoh^1,2, T. Mimura^1,2, A. Kasamatsu¹ (1.NICT, 2.Fujitsu Labs.(Japan))

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[PS-6-27L] Effect of Temperature on DC and RF Characteristics of Cryogenic InP HEMTs

^○A. Endoh^1,2, I. Watanabe¹, A. Kasamatsu¹, T. Takahashi², S. Shiba², Y. Nakasha², T. Iwai², T. Mimura^1,2 (1.NICT, 2.Fujitsu Labs.(Japan))

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[PS-7-1] GaN Metal-Insulator-Semiconductor Ultraviolet Detectors with Lanthanum Fluoride (LaF₃) Insulating Layers

^○C. H. Chen¹, C. F. Cheng¹ (1.Cheng Shiu Univ.(Taiwan))

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894 results (721 - 730)