[PS-13-25 (Late News)] Contact Properties of SWNT TCEs via the Microwave Treatment

K. H. Kim^1,2,^○M. Yun¹, H. -D. Kim¹ (1.Sejong Univ. (Korea), 2.Univ. of Michigan (USA))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 12:23 〜 12:25 |PDF ダウンロード

[PS-14-01] Observations of Inhomogeneity of 3C-SiC Layers Grown on 6H-SiC Substrates Using Scanning Internal Photoemission Microscopy

^○K. Shiojima¹, N. Mishina¹, N. Ichikawa², M. Kato² (1.Univ. of Fukui (Japan), 2.Nagoya Inst. of Tech. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:35 〜 11:37 |PDF ダウンロード

[PS-14-02] Reaction mechanisms at 4H-SiC/SiO₂ interface during wet SiC oxidation

^○T. Akiyama¹, S. Hori¹, K. Nakamura¹, T. Ito¹, H. Kageshima², M. Uematsu³, K. Shiraishi⁴ (1.Mie Univ. (Japan), 2.Shimane Univ. (Japan), 3.Keio Univ. (Japan), 4.Nagoya Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:37 〜 11:39 |PDF ダウンロード

[PS-14-03] Compact Modeling of SiC Schottky Barrier Diode (SBD) and Its Extension to Junction Barrier Schottky Diode (JBS)

^○D. Navarro¹, M. Miura-Mattausch¹, H. J. Mattausch¹, M. Takusagawa², J. Kobayashi², M. Hara² (1.Hiroshima Univ. (Japan), 2.Toyota Motor Corp. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:39 〜 11:41 |PDF ダウンロード

[PS-14-04] Determination of Temperature-Dependent Stress in SiC MOSFETs by Raman Spectroscopy

^○R. Sugie¹, T. Uchida¹ (1.Toray Research Center Inc. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:41 〜 11:43 |PDF ダウンロード

[PS-14-05] Interface Properties of Diamond MOS Diodes Studied by Capacitance-Voltage and Conductance Methods - NO₂ Hole Doping Effect -

^○N. C. Saha¹, M. Kasu¹ (1.Saga Univ. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:43 〜 11:45 |PDF ダウンロード

[PS-14-06] AC Hot carrier effect and PBTI of a thin-film SOI Power n-MOSFET at high temperature

^○M. Nomura¹, A. Watanabe¹, S. Matsumoto¹ (1.Kyushu Inst. of Tech. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:45 〜 11:47 |PDF ダウンロード

[PS-14-07] Highly Efficient and Compact CMOS DC-DC Converter with Novel Transistor Layout of 60 nm Multi-pillar Type Vertical Body Channel MOSFET

^○K. Itoh^1,2,3, T. Endoh^1,2,3 (1.Tohoku Univ. (Japan), 2.ACCEL, JST (Japan), 3.OPERA, JST (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:47 〜 11:49 |PDF ダウンロード

[PS-14-08] High Temperature SiC Power Module Enhanced with Transient Thermal Characteristic by Al-bump Technology

^○H. Tanisawa^1,2, F. Kato¹, K. Koui^1,3, S. Sato¹, K. Watanabe¹, H. Takahashi^1,4, Y. Murakami^1,5, H. Sato¹ (1.AIST (Japan), 2.Sanken electric Corp., Ltd. (Japan), 3.Calsonic Kansei Corp. (Japan), 4.Fuji Electric Co., Ltd. (Japan), 5.NISSAN MOTOR Corp., Ltd. (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:49 〜 11:51 |PDF ダウンロード

[PS-14-09 (Late News)] Evaluation of Hall Effect Mobility for SiC MOSFETs with Increasing Nitrogen Implantation into Channel Region

^○M. Noguchi¹, T. Iwamatsu¹, H. Amishiro¹, H. Watanabe¹, K. Kita², S. Yamakawa¹ (1.Mitsubishi Electric Corp. (Japan), 2.Univ. of Tokyo (Japan))

2017 International Conference on Solid State Devices and Materials |2017年9月21日(木) 11:51 〜 11:53 |PDF ダウンロード