2018 International Conference on Solid State Devices and Materials

Sep 9, 2018 - Sep 13, 2018
University of Tokyo

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922 results (161 - 170)

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[D-8-07 (Late News)] Investigation of bias annealing effects for normally-off GaN MOS-HFET with thin AlN barrier layer

^○T. Nanjo¹, H. Koyama², A. Imai¹, T. Watahiki¹, M. Yamamuka¹ (1.Mitsubishi Electric Corporation, Advanced Technology Research & Development Center (Japan), 2.Mitsubishi Electric Corporation, High Frequency & Optical Device Works (Japan))

2018 International Conference on Solid State Devices and Materials |Thu. Sep 13, 2018 3:30 PM - 3:45 PM |PDF Download

[E-3-01 (Invited)] Photoemission Study of Gate Dielectrics and Stack Interfaces

^○S. Miyazaki¹, A. Ohta¹ (1.Nagoya Univ. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 9:00 AM - 9:30 AM |PDF Download

[E-3-02] Effect of Conduction Band Offset on the Gate Leakage Current for SiO₂/4H-SiC (000-1) Studied by Hard X-ray Photoelectron Spectroscopy

^○E.D. Indari^1,2, Y. Yamashita^1,2, R. Hasunuma³, K. Yamabe³ (1.NIMS (Japan), 2.Kyushu Univ (Japan), 3.Univ. of Tsukuba (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 9:30 AM - 9:45 AM |PDF Download

[E-3-03] Gate-induced modulation of interface dipole in HfO₂-based MOS structures

^○N. Miyata¹ (1.AIST (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 9:45 AM - 10:00 AM |PDF Download

[E-3-04] Evaluation of Electron Traps in SiN by Discharging Current Transient Spectroscopy: Verification of Validity by Comparing with Conventional DLTS

^○H. Seki¹, Y. Mitani¹ (1.Toshiba Memory Corp. (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 10:00 AM - 10:15 AM |PDF Download

[E-3-05 (Late News)] Achieving extremely high levels of electrically active doping in silicon carbide epitaxy

G. Colston¹,^○M. Myronov² (1.Advanced Epi Materials and Devices Ltd (UK), 2.The University of Warwick (UK))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 10:15 AM - 10:30 AM |PDF Download

[E-4-01] Tensile strain of r-BiFeO₃ film grown on KTaO₃ substrates

I.T. Bae², T. Ichinose¹, M.G. Han³, Y. Zhu³, S. Yasui⁴,^○H. Naganuma^1,5 (1.Tohoku Univ. (Japan), 2.Stat. Univ. NY (USA), 3.Brookhaven Nat. Lab (USA), 4.Tokyo Tech (Japan), 5.CNRS/Thales (France))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 10:45 AM - 11:00 AM |PDF Download

[E-4-02] Growth of epitaxial Y₂O₃-doped ferroelectric HfO₂ films by sputtering method and their characterization

^○H. Funakubo¹, T. Suzkuki¹, T. Mimura¹, T. Shimizu¹, H. Uchida² (1.Tokyo Tech (Japan), 2.Sophia University (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 11:00 AM - 11:15 AM |PDF Download

[E-4-03] Magnetic and Optical Properties on Strained Thin Films of Garnet Ferrites

^○A. Katougi¹, H. Yamahara¹, M. Seki¹, H. Tabata¹ (1.Univ. of Tokyo (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 11:15 AM - 11:30 AM |PDF Download

[E-4-04] Deep level transient spectroscopy characterization of undoped BaSi₂ light absorbers

^○Y. Yamashita¹, T. Sato¹, K. Toko¹, T. Suemasu¹ (1.Univ. of Tsukuba (Japan))

2018 International Conference on Solid State Devices and Materials |Wed. Sep 12, 2018 11:30 AM - 11:45 AM |PDF Download

922 results (161 - 170)

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